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dielectric function
相关语句
  介电函数
    Experimental Verification of Theoretical Calculation of Dielectric Function Spectra of Short-Period GaAs/AlAs Superlattices
    短周期GaAs/AlAs超晶格的光频介电函数谱理论的实验检验
短句来源
    Static Dielectric Function of Electron Gas and Screened Potential in Quantum Wells
    量子阱中电子气的静态介电函数和屏蔽势
短句来源
    There are more experiments and study of the theory we nend to continue. For the different range of carrier concentration, we need modify the dielectric function to obtain more exactitude electrical parameters.
    还要作更多的实验验证和理论研究工作,另外对于不同浓度范围的SiC,为了得到精确的电学参数,还需要对其介电函数模型进行进一步的修正。
短句来源
    Using a variational calculation,a study of the binding energies ofscreened excitons in quantum wells is presented. The screening effect is describedby a dielectric function of the electron gas in mediums with finite thickness.
    用变分法计算了鼻子阱中屏蔽激子的束缚能.屏蔽效应是用有限厚度介质中电子气的介电函数描述的.
短句来源
    It was derived that the modulated reflective spectrum of weak electric field is proportional to the third derivative of the dielectric functions with respect to the energy. The dielectric function spectra for GalnP and doped Si or Zn GaInP samples grown by MOCVD were obtained in the region of visible light by using the ellipsometric spectroscopy, and then the first and third derivative spectra were evaluated.
    导出了弱电场调制反射谱与介电函数对能量的三级微商成正比,将MOCVD方法生长的GaInP以及掺Si和掺Zn三个样品,用椭偏光谱法测量得到可见光区的介电函数谱,并求其一级和三级微商谱。
短句来源
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  介电函数的
    (ii) It seems that for silicon, a higher sensitivity for the surface imperfection may beobtained with the real part ∈' of the dielectric function than its imaginary ∈" in the wavelengthrange of E_1.
    (ⅱ)在E_1结构附近,用介电函数的实部B'(hv)区分表层质量的微细差异,似乎比用其虚部B"(hv)效果更佳.
短句来源
    Extending the three - point - scaling used in the analysis of the electric reflective spectrum, the first and third derivative spectra of the dielectric functions can be analyzed . The experimental results of reflective spectra of wavelength modulation and weak electric field modulation were obtained and compared with that of dielectric function spectra. The sensitivity and resolution ratio increase remarlkably.
    将用于分析电反射谱的三点法推广用于分析介电函数的一级和三级微商谱,得到波长调制和弱电场调制反射谱的实验结果,并与介电函数谱的结果加以比较,使灵敏度和分辨率有很大提高。
短句来源
    Extending the three-point-scaling used in analyzing the electric reflective spectrum, the first and third derivative spectra of the dielectric functions can be analyzed. The experimental results of reflective spectra of wavelength modulation and weak electric field modulation are obtained and are compared with that of dielectric function spectra,which shows that the sensitivity and resolution are remarkably improved.
    将用于分析电反射谱的三点法推广用于分析介电函数的一级和三级微商谱,得到波长调制和弱电场调制反射谱的实验结果,并与介电函数谱的结果加以比较,使灵敏度和分辨率有很大提高
短句来源
  “dielectric function”译为未确定词的双语例句
    A METHOD IMPROVED TO RECKON THE DIELECTRIC FUNCTION FROM THE INCOMPLETE FAR INFRARED REFLECTION SPECTRUM
    非完整红外反射光谱中介电函数推算方法的改进
短句来源
    The synthetical application of the oscillator model and Kramers Kronig relation to the far infrared reflection spectrum of the long wavelength optical phonon in crystals was reported. By using the restriction condition between the oscillator model and the Kramers Kronig relation, a method was proposed to reckon the dielectric function from the incomplete far infrared reflection spectrum.
    报道了谐振子模型和Kramers-Kronig关系相结合在晶体长波光学声子红外反射光谱上的应用,提出了利用谐振子模型和Kramers-Krong关系之间相互制约的关系改进在非完整红外反射光谱中介电函数推算的方法
短句来源
    The composition and refractive index of GaInAsSb quaternary semiconductor material for photodetector operating at 2.4μm are obtained by using interpolation and models of dielectric function.
    本文用线性插值和介电常数的计算模型,得到了GaInAsSb 四元系2.4μm探测器材料的组份及其折射率。
短句来源
  相似匹配句对
    Dyadic Green's Function for Nonradiative Dielectric Waveguide
    无辐射介质波导中的并矢格林函数
短句来源
    Strip Distributed Transfer Function Analysis of Rectangular Dielectric Waveguides
    矩形介质光波导的条形传递函数方法
短句来源
    It is steady in function.
    这种器件性能稳定.
短句来源
    AUTOANALYSIS OF DIELECTRIC SPECTRUM
    介电谱的自动测量
短句来源
    FUNCTION HARDWARE EVOLUTION
    函数级硬件进化
短句来源
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  dielectric function
The calculations are based on the exactly solved model of a sharp metal/electrolyte interface, the model of a Born sphere for the ion, and the three-mode approximation for the dielectric function of the solvent.
      
Parameters of the analytical expression used for the dielectric function ε(k) of the solvent are selected so as to reproduce the results of calculations of the ε(k) function obtained by a molecular dynamics method.
      
The complex dielectric function of the films was determined from the experimental data by dispersion analysis of the reflection spectra.
      
This effect is related to the fact that a contribution to the dielectric function of slow ions, determining the scattering amplitude, depends on both spatial and frequency dispersion.
      
The k-dependent semiclassical dielectric function is employed instead of the Lindhard-Mermin expression.
      
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The surface trace imperfection of silicon wafers resulting from different polishing techno-logies has been quantitatively characterized by use of spectroscopic ellipsometry.The dielectricfunction θ=θ'+iθ" for the residual damaged thin layer at the surface was calculatedfrom the ellipsometric parameters (?),ψon the basis of a four-phase model. Results show that(i) A diagnosis for very small differences between various conventionally adopted polishingprocesses can be feasibly realized in the E_1 spectroscopic...

The surface trace imperfection of silicon wafers resulting from different polishing techno-logies has been quantitatively characterized by use of spectroscopic ellipsometry.The dielectricfunction θ=θ'+iθ" for the residual damaged thin layer at the surface was calculatedfrom the ellipsometric parameters (?),ψon the basis of a four-phase model. Results show that(i) A diagnosis for very small differences between various conventionally adopted polishingprocesses can be feasibly realized in the E_1 spectroscopic structure of the silicon interband trans-ition region,rejecting the necessity of E_2-structure which emerges from a more shorter UVrange.(ii) It seems that for silicon, a higher sensitivity for the surface imperfection may beobtained with the real part ∈' of the dielectric function than its imaginary ∈" in the wavelengthrange of E_1.

用椭偏光谱研究了硅片抛光的表面质量.假设一个四相模型,对测量数据进行分析处理.结果表明,(ⅰ)用带间光谱的E_1结构,可以分辨表层质量的稍优或稍劣,而不一定要用E_2结构.(ⅱ)在E_1结构附近,用介电函数的实部B'(hv)区分表层质量的微细差异,似乎比用其虚部B"(hv)效果更佳.

With semi-empirical tight-binding method,the electronic joint state densities and the ima-ginal parts of dielectric functions of Ga_xIn_(1-x)P_yAs_(1-y) lattice-matched to InP have been calcula-ted.And the refractive indices in the optical transparent zone have also been obtained by useof Kramens-Kronig relation.

采用半经验的紧束缚方法计算了与InP晶格相匹配的Ga_xIn_(1-x)P_yAs_(1-y)半导体的电子联合状态密度及介电常数虚部,并根据Kramers-Kronig关系式求得了光透明区的折射率常数.

Abstract Ellipsometric spectra of a series of short-period (GaAs)M/(AlAs)M superlattices with M=2,4,6,10 have been measured. The dielectric function spectra of these samples are directly analysed and compared with the theoretical results for the superlattices with M=4,6,10 calculated by Jian-Bai Xia and Yia-Chung Chang.The main features of the experimental spectra near the E1 and E1 peaks in the 3.5-4.5eV range are consistent with results of thoretical calculation.The E1 peaks in the measured spectra are...

Abstract Ellipsometric spectra of a series of short-period (GaAs)M/(AlAs)M superlattices with M=2,4,6,10 have been measured. The dielectric function spectra of these samples are directly analysed and compared with the theoretical results for the superlattices with M=4,6,10 calculated by Jian-Bai Xia and Yia-Chung Chang.The main features of the experimental spectra near the E1 and E1 peaks in the 3.5-4.5eV range are consistent with results of thoretical calculation.The E1 peaks in the measured spectra are stronger than those in the theoretical results,and the difference of E1 peak between superlattices of different M is also larger for the experimental results.

我们制备了M=2,4,6和10的一系列短周期(GaAs)M/(AlAs)M厂超晶格样品并测量了其椭偏光谱.对这些样品的光频介电函数港进行了分析,并与夏建白等的理论计算结果作了直接比较上述理论计算是对M=4,6和10的超晶格样品作出的,并给出相应的介电函数谱曲线.在光子能量3.5~4.5eV范围的E1峰与瓦峰附近的实验谱的主要特征,与理论计算结果相一致实验谱中的E1峰比理论谱要强些,不同M值的超晶格样品之间的E1峰之差异也大于理论结果。

 
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