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minority carrier
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  少数载流子
     Implanted phophorus concentration varies from 5. 4 ×10 14 cm -3 to 6.0 × 10 18 cm-3,while the minority carrier lifetime in the base of silicon- polysilicon P+N junction decreases from 1.4 × 10-10s to 7.5×10-13s.
     掺磷浓度从 5.4×1014cm-3变化到 6.0×1018cm-3,相应二极管的 基区少数载流子寿命从1.4×10-10S减少到7.5×10-13s并且随着晶粒尺寸的增加, 寿命变大。
短句来源
     MINORITY CARRIER LIFETIME CALCULATION OF SILICON DOPED GOLD
     掺金硅中少数载流子寿命计算
短句来源
     Study on measuring system for minority carrier lifetime
     少数载流子寿命测试系统研究
短句来源
     The minority carrier lifetime is the key parameter of the semiconductor material.
     少数载流子寿命是衡量半导体材料性能的关键参数之一 ,文中介绍了光电导衰退法少数载流子寿命测试系统。
短句来源
     The minority carrier lifetime of the crystal is not less than 1500 μs and there is no dislocation and swirl defect in the crystal.
     经检测无位错及漩涡缺陷,单晶的少数载流子寿命达到1500μs以上。
短句来源
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  少子
     Minority Carrier Lifetime in P-type Hg_(1-x)Cd_xTe Grown by MBE
     分子束外延P型Hg_(1-x)Cd_xTe少子寿命的研究
短句来源
     Contactless Measurement of Minority Carrier Diffusion Length and Hall Mobility of GaAs and Al_xGa_(1-x)As Epitaxial Layer
     GaAs、Al_xGa_(1-x)As外延层少子扩散长度及霍耳迁移率的无接触测
短句来源
     Determination of Composition and Minority Carrier Diffusion Length for n-AI_xGa_(1-x)As/n-GaAs by Surface Photovoltage Method
     表面光电压法测定Al_xGa_(1-x)As的组分和少子扩散长度
短句来源
     The effect of grain size on the short-circuit current and AM_1 efficiency of polycrystalline silicon MIS (Al/SiO_2/P-Si) solar ceils have been calculated, where the Rothwarf's model of recombination loss in crystal boudaries,the Green's formula for minoity carries MIS tunnel diodes current and the Soclof's efficient minority carrier diffuse length were used.
     本文计算了晶粒尺寸对多晶 Si MIS(Al/SiO_2/p—si)太阳电池短路电流和 AM_1效率的影响。 其中利用了 Rothwarf 的晶界复合模型,Green 的少子 MIS 隧道二极管电流公式和 Soclof 的等效扩散长度.
短句来源
     THE MATHEMATICAL MODEL OF THE DIFFERENTIAL SPV TECHNIQUE FOR MEASURING MINORITY CARRIER DIFFUSION LENGTH OF a-Si:H FILM
     差分SPV法测量a-Si:H材料少子扩散长度的数学模型
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  “minority carrier”译为未确定词的双语例句
     minority carrier diffusion lengths from 8-10μm in the substrates was reduced to below 0.29 μm in the surface layer.
     少于扩散长度由衬底的8~10μm降至表面的0.29μm以下;
短句来源
     The Measurement of Minority Carrier Generation Lifetime and Surface Generation Velocity of Si—SiO_2 System Using C—V Method
     用C—V法测量Si—SiO_2系统的产生寿命和表面产生速度
短句来源
     Simultaneous Determination of Minority Carrier Lifetime and Surface Generation Velocity Using a MOS C-V Technique
     用MOS C-V技术同时确定体产生寿命和表面产生速度
短句来源
     The carrier concentration profiles,photovoltage spectra in different depth and minority carrier diffusion lengths of n-InP samples,into which zinc was open diffused at temperature of 470℃ in hydrogen atmosphere,have been measured by using electrochemical liquid junction method.
     用电化学液结方法测量了在470℃于氢气氛下开管扩锌InP样品的载流子浓度分布、不同深度的光伏谱和少于扩散长度。
短句来源
     Measurement of Minority Carrier Lifetime in Silicon by the Method of 1. 09μm Infrared High Frequency Photoconductive Decay
     高频1.09μm红外光电导衰减法测试硅单晶非平衡载流子寿命
短句来源
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  minority carrier
Measurement of the Minority Carrier Diffusion Length in Thin Wafers of Semiconductor Crystals
      
A method for the measurement of the minority carrier diffusion length and the estimation of the surface recombination rate in thin silicon wafers is described.
      
Determination of the Minority Carrier Surface Thermogeneration Rate in Metal-Oxide-Semiconductor Structures
      
The sequence and number (down to one) of the peaks depend on the activation energies of the associated processes, value of βv, and energy of activation of minority carrier generation.
      
It is demonstrated that, at low excitation intensities, the saturation of stationary photoconductivity and a decrease in the relaxation time with an increase in E are caused by the minority carrier extraction.
      
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A general theory of injection of minority carriers in p-n alloy junctions was developed by using one-dimensional model. It was assumed that the recombination rate is proportional to the density of injected carriers. Two extreme cases of low injection levels and high injection levels were first considered, and the result of which was then used as the zero-order approximation in calculating the distribution of the injected minority carriers in p-n junctions. By the method of successive approximation,...

A general theory of injection of minority carriers in p-n alloy junctions was developed by using one-dimensional model. It was assumed that the recombination rate is proportional to the density of injected carriers. Two extreme cases of low injection levels and high injection levels were first considered, and the result of which was then used as the zero-order approximation in calculating the distribution of the injected minority carriers in p-n junctions. By the method of successive approximation, an analytical expression for the relationship between the injection efficiency and the injection level (i. e. the ratio of the density of injected minority carriers to that of original majority carriers) was obtained. A similar expression for the relationship between the total current density flowing through the junction and the injection level was developed on the same basis. The results of the present theory show that for an ordinary alloy junction transistor, the injection efficiency of the emitter decreases gradually as the emitter current increases. At very high

本文用一维模型计算了p-n合金结中少数载流者的一般注射理论。这里假设复合率是与注入载流者的密度成正比。首先,我们讨论了大注射和小注射的两种极端情况,这样得到的结果被用作零级近似解来计算p-n结中注入少数载流者的分布情况。用逐步近似的方法我们得到了注射效率和注射强度(即注入少数载流者的密度与原有多数载流者的密度之比)间的解析关系。在同样的基础上也得到了通过结的总电流密度和注射强度间的类似关系。这理论的结果表明;对一个平常的合金结晶体三极管来说,当发射极电流增加时,发射极的注射效率逐渐下降。在很大的注射强度下,注射效率趋近于极限值1/(1+b),其中b是电子迁移率与空穴迁移率之比。对一个具有很低注射效率的p-n合金结来说,在注射电流小的时候,注射效率是正比于通过结的总电流;当往射电流很大时,注射效率趋近于极限值1/(1+b)。理论结果还表明,在小注射情下,通过p-n合金结的总电流是正比于注射强度;而在大注射情况下,它是正比于注射强度的平方。

An equivalent circuit of transistors operating in saturation region is suggested. This circuit contains a transistor operating in active region and a diode biased in forward direction. By using this equivalent circuit, the physical meaning of storage time of transistors may be explained more intuitively. With this, the storage time in drift transistor, Which is common base connected, has been investigated. By solving the continuity equation, the steady state and the transient components of the densities of minority...

An equivalent circuit of transistors operating in saturation region is suggested. This circuit contains a transistor operating in active region and a diode biased in forward direction. By using this equivalent circuit, the physical meaning of storage time of transistors may be explained more intuitively. With this, the storage time in drift transistor, Which is common base connected, has been investigated. By solving the continuity equation, the steady state and the transient components of the densities of minority carriers in diode near the p-n-junction is obtained. By setting these two components equal in magnitude and opposite in sign, we get a formula, from which the storage time may be determined. The storage time in some special cases has been calculated. The results show that the storage time depends upon the life time of minorities and the surface recombination velocities both in base region and in collector region. This may be a guide for design a transistor with more short storage time.

半导体三极管在饱和区工作时,其等效电路可以用一个三极管及一个由集电极及基极构成的二极管联成的电路表示出来,其中三极管在有源区工作,而二极管在正向偏压下工作。这样的等效电路具有比较明显的物理意义。利用这个电路来求漂移管在一个共基极电路中脉冲工作下的储存时间。解出非平衡少数载流子的连续性方程,求出二极管p-n结附近非平衡少数载流子密度的稳定态分量及暂态分量,从而得到决定储存时间的方程。计算结果表明,储存时间与基极区域及集电极区域中非平衡载流子的寿命及表面复合速度有关。减少寿命及增加表面复合速度就可以减少储存时间。

The non-equilibrium minority carriers produced by the α-particles while penetrating into the diffused layer of the Au-Si surface barrier detector diffuse into the boundary of barrier layer and are then collected. Hence an output pulse is obtained at the two terminals of the detector. The collecting efficiency in the diffused layer and the relations between the collecting efficiency and the diffusion length are calculated. The experimental results have been compared with the theory, and the diffusion length...

The non-equilibrium minority carriers produced by the α-particles while penetrating into the diffused layer of the Au-Si surface barrier detector diffuse into the boundary of barrier layer and are then collected. Hence an output pulse is obtained at the two terminals of the detector. The collecting efficiency in the diffused layer and the relations between the collecting efficiency and the diffusion length are calculated. The experimental results have been compared with the theory, and the diffusion length of minorty carriers is then determined.

当α粒子穿入Au-Si面垒探测器的扩散区时,其产生的非平衡少数载流于扩散到势垒边界而被收集,因此在探测器两端有一输出脉冲。本文从理论上计算了扩散区中的收集效率,获得了收集效率和扩散长度的函数关系。另外将实验上测定的收集效率与理论加以比较,从而确定少数载流子的扩散长度。

 
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