Insulating properties of Ta_2O_5 dielectric films and Ta_2O_5-SiO doubly-stacked dielectric films are discribed. Ta_2O_5 films are deposited by DC magnetron reactive sputtering, and SiO films in doubly-stacked dielectric films are deposited by resistance evaporation.
By the rapid thermal nitridation (RTN) of ultra thin (10 nm) SiO 2 films, the ultra thin SiO x N y dielectric films had been prepared with tungsten halogen lamp as radiation source, and the Al/n Si/SiO x N y /Al capacitors had been fabricated too.
A kind of 1-D MPC composed of magnetcoptical films(Bi: YIG)and dielectric films(Ta2O5,SiO2) is investigated by transmitting matrices. The Faraday effect of this films structure is discussed at vertical incidence and oblique incidence conditions, and some films structures which can simultaneously exhibits very high optical transmittance and Faraday rotation are found. An effective approach for fabricating micro-size magnetcoptical isolator is provided.
We review the recent theoretical investigation on enhanced second-harmonic generation (SHG) in soft nonlinear optical materials based on ferrofluids, graded metallic films, and graded metal-dielectric films of anisotropic particles.
Determination of a Mobile-Ion Concentration in the Dielectric Films of Metal-Insulator-Semiconductor Structures
An experimental technique for determining the surface concentration NSof mobile ions in dielectric films of metal-insulator-semiconductor (MIS) structures is described.
The thermal-oxidation growth of dielectric films on InP substrates with NH4NO3 introduced into the oxidizing atmosphere is studied experimentally.
Measurements of electric discharge characteristics is suggested for the simultaneous online measurements of the thickness and quality tests of dielectric films, coatings, and substrates.