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parameters
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  参数
    Study of Electromagnetic Modeling and Parameters Extraction of On-chip Interconnects in High Speed Integrated Circuits
    高速集成电路片内互连的电磁建模和参数提取研究
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    On Basic Parameters and Radiation Theory of Non-uniform Channel DMOS
    非均匀沟道DMOS基本参数及其辐照理论的研究
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    The Constant Current Transient Technique for Determination of Electrical Parameters in Silicon Chip and MOS Properties
    测量硅片电学参数及MOS特性的恒流瞬态技术(Ⅱ)
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    MEASUREMENT OF THE PARAMETERS OF SUBMICRO GaAs EPITAXIAL LAYER BY ELECTROCHEMICAI C-V METHOD
    电化学C-V法测量亚微米GaAs外延层的参数
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    Calculation of Microwave Scattering Parameters for a Gallium Arsennld MESFET
    GaAs MESFET微波散射参数计算
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  s参数
    Error Modification of Parameter S in Measurement
    S参数在测试中的误差修正
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    On the basis of this model, the measuring system was corrected using three calibrated com-ponents with load of 0Ω,0s and 50Ω respectively, then the solving calibration equations for correction coefficient were used to obtain precise parameter S.
    以此误差模型为基础,利用OΩ、Os、50Ω三个校准件,对测量系统进行校准,通过求解校准方程,得出修正系数. 即可获得精确的S参数.
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    ANALYSIS OF THE QUIESCENT OPERATING POINT AND SELECTION OF THE PARAMETERS IN THE MOSFET AMPLIFIER CIRCUITS
    MOSFET放大电路静态工作点的分析及参数选择
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    An Empirical Formula for Estimating Range Parameters R_p and ΔR_p of Heavy Ions Implanted into Amorphous SiO_2, Al_2O_3 and Si_3N_4
    一个估算重离子在SiO_2、Al_2O_3和Si_3N_4中的R_p和ΔR_p的经验公式
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    A Study of Ellipsometric Parameters in the Thermal Annealing Process of As Ion-Implanted Si
    剥层椭偏法对As~+注入Si热退火过程的进一步研究
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    Effect of Technological Parameters on Ar~+ Laser Recrystallized Poly-Si/SiO_2 Interface Characteristics
    影响Ar~+激光再结晶多晶硅/二氧化硅界面性质的因素
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    Choice and Application of Optimal Technical Parameters in Preparing CVD Si_3N_4 Films
    Si_3N_4膜气相淀积的最佳工艺条件的选择和应用
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  parameters
The essential dimension is a numerical invariant of the group; it is often equal to the minimal number of independent parameters required to describe all algebraic objects of a certain type.
      
We show that the structure of a block outside the critical hyperplanes of category O over a symmetrizable Kac-Moody algebra depends only on the corresponding integral Weyl group and its action on the parameters of the Verma modules.
      
Quantitative parameters in an analog of the Beurling-Pollard theorem differ from those for A.
      
Quantitative parameters in an analog of the Beurling-Pollard theorem differ from those for A.
      
In this article we consider the question when one can generate a Weyl- Heisenberg frame for l2(?) with shift parameters N, M-1 (integer N, M) by sampling a Weyl-Heisenberg frame for L2(?) with the same shift parameters at the integers.
      
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This paper describes a detailed analysis of conversion properties of junction transistors. A new parameter "the effective conversion transconductance" is introduced for characterizing transistor converters. The effective conversion transcon-ductance of transistor converters using a PNP transistor operated at different oscillatory conditions and at various signal frequencies are studied. Main differences between transistor converters and vacuum tube converters are compared.

本文讨论面结型晶体管变频性能的分析。提出新参数“有效变频跨导”来决定晶体管变频器的特性。研究晶体管变频器在各种振荡状况下及不同讯号频率时对有效变频跨导的影响。比较晶体管变频器与电子管变频器的主要区别。

This paper describes the fundamental problems of different types of photo-multiplier tubes for scintillation techniques, the relation between parameters of the multiplier-photo-tubes and their application. The status of photo-cathodes, secondary emissive surfaces and the structures of photo-multipliers in recent years are combined. It introduces Sb-Cs Sb-K-Na-Cs photo-cathodes and the reflective substrate semitransparent photo-cathodo, also the secondary emission of Sb-Cs, Ag-Mg and Al-Mg dynodes. The...

This paper describes the fundamental problems of different types of photo-multiplier tubes for scintillation techniques, the relation between parameters of the multiplier-photo-tubes and their application. The status of photo-cathodes, secondary emissive surfaces and the structures of photo-multipliers in recent years are combined. It introduces Sb-Cs Sb-K-Na-Cs photo-cathodes and the reflective substrate semitransparent photo-cathodo, also the secondary emission of Sb-Cs, Ag-Mg and Al-Mg dynodes. The structure between the photocathode and the first dynode, the system of dynodes are also introduced. The latter part of this paper describes improvements for photo-cathode, dynode and the multiplier structure.

本文简要叙述了射线的探测技术对光电倍加管的各种要求,以及管子的基本参数与应用的关系,综合了近年来文献中与此有关的光阴极、二次极和结构方面的工作情况。在阴极方面介绍了锑-铯、锑-钾-钠-铯光阴极和新的反射式锑-铯光阴极。在二次极方面介绍了锑-铯二次极和银-镁、铝-镁合金二次极等。在结构方面介绍了光阴极到第一个二次极区域的电子光学输入部分的结构和二次发射倍增系统的结构。本文还初步讨论了光阴极、二次极及管型结构方面的若干改进意见。

A simple method to measure and analyse the factors affecting the maximum frequency of oscillation of transistors is described. From the maximum frequencies of oscillation measured with certain external series resistances connected in the base and collector circuits, the frequency of zero db current gain fT, base resistance rb, collector capacitance Cc, and also the intrinsic characteristic frequency fTd of the transistor can be deduced. The method of analysis is also discussed in the case when the collector...

A simple method to measure and analyse the factors affecting the maximum frequency of oscillation of transistors is described. From the maximum frequencies of oscillation measured with certain external series resistances connected in the base and collector circuits, the frequency of zero db current gain fT, base resistance rb, collector capacitance Cc, and also the intrinsic characteristic frequency fTd of the transistor can be deduced. The method of analysis is also discussed in the case when the collector conductance introduced by base width modulation plays an important role in limiting the maximum frequency of oscillation of the transistor. The connection between the maximum frequency of oscillation of drift transistor and its external parameters is discussed finally. It is concluded that when proper corrections are made for drift transistors, not only fTd, rb, and Cc, but also the magnitude of drift field in the base region of drift transistors can be deduced.

本文讨论了晶体管最高振荡频率有关因素的一种测量分析方法。利用在基极和集电极迴路中串入外加串联电阻后测量最高振荡频率的变动,可以同时获得晶体管共发射极短路电流放大零增益频率f_T、基极电阻γ_b、集电极电容C_c以及本征的特性频率f_(Td)。讨论了当基极层厚度调制作用所致的集电极电导起作用时的分析方法。最后分析了漂移晶体管最高振荡频率与晶体管外部参数的关系,结果说明,上述方法在考虑了适应于漂移晶体管的修正步骤后,除同样能得到f_(Td)、γ_b、C_c等有关参数外,还可以分析得出漂移晶体管基极层中的漂移电场强度。

 
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