助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   device 在 无线电电子学 分类中 的翻译结果: 查询用时:0.017秒
图标索引 在分类学科中查询
所有学科
无线电电子学
仪器仪表工业
计算机硬件技术
核科学技术
农业工程
预防医学与卫生学
机械工业
电力工业
自动化技术
更多类别查询

图标索引 历史查询
 

device
相关语句
  器件
    Study on Si/SiGe Heterojunction Device
    Si/SiGe异质结器件研究
短句来源
    Study on the High-Power Cherenkov Device of Millimeter Wave
    高功率毫米波Cherenkov器件研究
短句来源
    Study of Novel Structural SOI Materials and Device Physics
    新结构SOI材料与器件物理研究
短句来源
    Study of the Reliability of Power Device with Lead-free Heat-sink Attachment
    功率器件无铅焊料焊接层可靠性研究
短句来源
    Research on MEMS Device Design,Packaging Process and Application
    MEMS器件设计、封装工艺及应用研究
短句来源
更多       
  器件的
    Principle and Analysis of Transistor Delayed Injection and Transit Time Device
    晶体管延迟注入渡越时间器件的原理与分析
短句来源
    LPE-GaAs for Hall Device Applications
    用于霍尔器件的LPE-GaAs材料
短句来源
    MESFET/SOS IC FABRICATION AND DEVICE CHARACTERISTICS AT LIQUID NITROGEN TEMPERATURE
    lμm MESFET/SOS 集成电路制备及液氮温度下器件的工作特性
短句来源
    MEASUREMENT FOR THE INTEGRATION MTF_i OF THE CCPD-1024 DEVICE
    CCPD-1024器件的MTF_i实验值的测试
短句来源
    The Electrical Design of a Novel LDMOS Device——Resurf LDMOS
    新型Resurf LDMOS器件的电参数设计
短句来源
更多       
  “device”译为未确定词的双语例句
    The Design of Switching Stabilizer for ΔM-32 Channels Digital Telephone Terminal Device
    △M-32路数字电话终端机开关电源设计
短句来源
    The Frequency Domain Analysis of Volterra Device
    Volterra元件的频域分析
短句来源
    Dynamic Impedance of Cascade JFET Constant Current Device
    串级JFET恒流器件的动态阻抗
短句来源
    Effects of SiH_4 Synchronous Epitaxial Growth Condition on the Electrical Parameters of SIT Device
    SiH_4同步外延对SIT电学参数的影响
短句来源
    Application of Charge Sweep Device Image Sensor
    CSD图像传感器的应用
短句来源
更多       
查询“device”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法,我们为您准备了出自英文原文的大量英语例句,供您参考。
  device
A new molecular rectifier device and some research in its processing
      
The device with a sandwich structure shows good rectificative phenomena.
      
The highest rectification ratio 10000 was achieved in device Cu/MR-1/Ag, and about 100 in other device M/MR-X/M (M: Cu, Ag).
      
The electrospinning equipment was designed in a new way, wherein the spinneret was combined with a gas jet device.
      
In this review, we briefly summarize the current status of organic field-effect transistors including materials design, device physics, molecular electronics and the applications of carbon nanotubes in molecular electronics.
      
更多          


The advances of solid state negative-resistance devices, such as tunnel diodes, variable reactance semiconductor diodes used in parametric forms, lead to the interests of the study of periodically loaded travelling type distributed amplifiers. This paper gives a detailed analysis on the transmission characteristics of this type of microwave amplifier. The analysis includes the study of the phase equation, gain equation, the frequency-phase characteristics, the pass band vs stop band relationships and the...

The advances of solid state negative-resistance devices, such as tunnel diodes, variable reactance semiconductor diodes used in parametric forms, lead to the interests of the study of periodically loaded travelling type distributed amplifiers. This paper gives a detailed analysis on the transmission characteristics of this type of microwave amplifier. The analysis includes the study of the phase equation, gain equation, the frequency-phase characteristics, the pass band vs stop band relationships and the phase velocity and group velocity characteristics. A detailed analysis on the travelling wave type semiconductor diode parametric amplifier is also given. Important universal curves and design conditions are also included for ready references.

由于各种固体负阻器件的进展,例如隧道二极管,参量应用的变容二极管等,从而引起了对具有周期性负载行波式分布放大器的研究。 本文对这一类微波放大器的传输特性进行了详细分析,对其主要性能的分析包括:相位方程,增益方程,频率-相位关系,通带及阻带,相速及群速等等。文中给出了变容二极管行波式参量放大器的分析;还给出了重要的通用曲线及设计要点以供参考。

To avoid employing massive magnetic focussing equipments in klystrons (e.g., three-covity amplifiers ),a centrifugol electrostatic focussing device is herein proposed. The working principle of this new type klystrons has been analysed;the bunching pa- rameters of the two-and three-covity klystrons have been calculated.comparisons have also been made with the ordinary two-and three-cavity klystrons.

为了避免在速调管中(例如在三腔速调管中)使用笨重的磁场装置,本文提出一种“离心静电聚焦速调管”的结构方案,并对这种新型的速调管的工作原理也进行分析,计算出这种双腔及三腔速调管的群聚参量,并和普通的双腔、三腔速管进行比较。

Many novel nanosecond pulse circuits with nanosecond rise time and high-repetition rate using step recovery diodes are discussed and recommended in this paper. The physical mechanisms of these circuits are described qualitatively by using the charge storage concepts and theory.The circuits discussed in this paper are divided into three groups: the pulse forming circuits which transform high frequency sinusoidal waves into nanosecond pulses; the pulse shaping circuits which transform pulses with slower transient...

Many novel nanosecond pulse circuits with nanosecond rise time and high-repetition rate using step recovery diodes are discussed and recommended in this paper. The physical mechanisms of these circuits are described qualitatively by using the charge storage concepts and theory.The circuits discussed in this paper are divided into three groups: the pulse forming circuits which transform high frequency sinusoidal waves into nanosecond pulses; the pulse shaping circuits which transform pulses with slower transient response into pulses with faster transient response, and the pulse generator circuits which make use of the step recovery diodes combined with other high-speed semiconductor devices.The inherent capability and importance of the step recovery diodes in the nanosecond pulse circuits are well illustrated by the discussion of various circuits developed in this paper. Other types of new pulse circuits using step recovery diodes with more detailed analysis and practical circuits will be reported in the near future.

本文討論了利用二极管由正向至反向恢复的阶跃特性所构成的多种新穎毫微秒脉冲电路;指出了阶跃恢复二极管在高重复頻率毫微秒脉冲电路中应用的多种可能性;并根据电荷存儲概念对各电路的物理机构提出了定性描述。 本文所研究的电路分成三类:将高重复頻率正弦波变換成毫微秒脉冲的形成电路;将响应慢的脉冲变換成响应快的脉冲的整形电路;与晶体管配合的毫微秒脉冲发生器电路。 通过这些电路的討論,提出阶跃恢复二极管在脉冲电路中应用的重要性及潛在能力。在以后的論文中将探討其它新型电路,并对某些电路作較詳尽的分析,提供实际应用举例。

 
<< 更多相关文摘    
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关device的内容
在知识搜索中查有关device的内容
在数字搜索中查有关device的内容
在概念知识元中查有关device的内容
在学术趋势中查有关device的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社