The XPS measurements show that the Cu2p3/2 core level in LaCuO3 shifts to higher binding energy about 2. 6eV relative to that of Cu2+ in La2CuO4 or CuO, this value is 1. 3eV higher than the relative shift value of Cu2p3/2 in NaCuO2 (insulator) to Cu2+in CuO.
An integrated circuit technique is used with the aid of Si_3N_4/SiO_2 as an insulator film, and Ca[CH_3(CH_2)_5CHCH_3C_6H_4]_4(PO_4)_2 and crown ether as active material. The compound Ca~(2+), K~+-ISFET is then developed.
The results show that,after the thermal treatment of the Ta_2O_5 gate insulator in H_2 atmosphere,the field effect mobility of MEH-PPV can be greatly enhanced from 1.24×10~(-5)cm~2/(V·s) to 2.15×10~(-4)cm~2/(V·s),while the threshold voltage decreases.
The main factors causing shunting error are investigated in detail: the influence and countermeasures of armored thermocouple, suh as diameter, sort, operation temperature, middle heat length and sort of insulator.