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minority
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  少数民族
     The Study of Balanced Development of Basic Education in Northwest Minority Area
     西北少数民族基础教育均衡发展研究
短句来源
     Studies on Genetic Polymorphism of Haptoglobin Ⅱ.Genetic Polymorphism of Haptoglobin among 5 Different Minority Nationalities in the Northeast of China
     结合珠蛋白遗传多态性的研究——Ⅱ.东北地区5个少数民族的Hp多态性特点
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     A Comparison Between Child Moral Developments of Han and Seven Minority Nationalities
     汉族与少数民族儿童道德发展比较研究
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     Minority Nationalities in India:Their Socio-economic Development
     印度少数民族社会经济发展问题
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     Dermatoglyphics Parameters and Cluster Analysis of Seven Minority Nationalities
     云南省七个少数民族的肤纹参数及聚类分析
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  民族
     A Study on the Leap Forward in Development of Economy of Minority Region
     民族地区经济跨越式发展研究
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     On Higher Medical Education Development in Southwest Minority Regions of China
     西南民族地区高等医学教育发展研究
短句来源
     Research on the Coupling of Ecological Construction and Economic Development in the Minority Areas of Our Country
     我国民族地区生态建设与经济发展的耦合研究
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     Education and Human Resource Development in Southwest Minority Poverty Area
     西南民族贫困地区的教育与人力资源开发
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     Nationalities and Development: the New Modernization Catching-Up Strategy in Minority Areas of China
     民族与发展:新的现代化追赶战略
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  少数
     Implanted phophorus concentration varies from 5. 4 ×10 14 cm -3 to 6.0 × 10 18 cm-3,while the minority carrier lifetime in the base of silicon- polysilicon P+N junction decreases from 1.4 × 10-10s to 7.5×10-13s.
     掺磷浓度从 5.4×1014cm-3变化到 6.0×1018cm-3,相应二极管的 基区少数载流子寿命从1.4×10-10S减少到7.5×10-13s并且随着晶粒尺寸的增加, 寿命变大。
短句来源
     the conidia are hyalicolor, the majority are ovoid or elliptic and the minority are rotundate, 7.8 ×4.5~9.4×5.9um;
     分生孢子透明 ,多为卵圆形、椭圆形 ,少数为圆形 ,大小为 7.8× 4 .5~ 9.4× 5 .9um ;
短句来源
     The minority are cells of CD3+CD4+CD8-, whose capacity to discern and wound to the tumour cell is restricted by MHC -II molecule .
     少数为CD3+CD4+CD8-细胞,其对肿瘤细胞的识别和杀伤受MHC-Ⅱ类分子的限制。
短句来源
     Results ① There were two distinct subsets of human NK cells according to cell surface density of CD56. The majority (approximately 90%) of human NK cells were CD56 dim and express high levels of CD16, whereas minority (approximately 10%) were CD56 bright and CD16dim/neg.
     结果①人类NK细胞根据CD56分子的表面密度可分为两个截然不同的群体,绝大多数(约90%)的NK细胞低水平表达CD56(CD56dim)且高表达CD16,少数NK细胞(10%)高水平表达CD56(CD56bright)且缺乏或低水平表达CD16;
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     Conclusion V1 leads may appears QS in minority of normal human beings.
     结论少数正常人V1可呈QS型。
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  “minority”译为未确定词的双语例句
     The Study of Protection of Minority Shareholders
     小股东权益保护研究
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     Research on the Minority Investor Protection of China's Listed Companies
     中国上市公司中小投资者保护研究
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     A Study of the Traditional Society and Cultural Transition of Female Muslim in Gansu, Qinghai and Ningxia Hui Minority Region
     甘青宁回族女性传统社会与文化变迁研究
短句来源
     Discussing the Chinese Literature of Zang Minority Writers
     论藏族作家的汉语文学
短句来源
     Simultaneous Determination of the Bulk and Surface Layer Lifetimes of Minority Carriers in a Semiconductor Using the C(t) Characteristics of MIS Structures
     用MIS结构C(t)特性同时决定半导体表面层内及体内的少子寿命
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  minority
Computer simulation shows that our model can figure out the breakage of the coexistence of majority and minority after a period's evolution.
      
Measurement of the Minority Carrier Diffusion Length in Thin Wafers of Semiconductor Crystals
      
A method for the measurement of the minority carrier diffusion length and the estimation of the surface recombination rate in thin silicon wafers is described.
      
Determination of the Minority Carrier Surface Thermogeneration Rate in Metal-Oxide-Semiconductor Structures
      
The estimated peripheral generation rate of minority charge carriers (holes) was 7.8 × 1011 cm-2 s-1.
      
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A general theory of injection of minority carriers in p-n alloy junctions was developed by using one-dimensional model. It was assumed that the recombination rate is proportional to the density of injected carriers. Two extreme cases of low injection levels and high injection levels were first considered, and the result of which was then used as the zero-order approximation in calculating the distribution of the injected minority carriers in p-n junctions. By the method of successive approximation,...

A general theory of injection of minority carriers in p-n alloy junctions was developed by using one-dimensional model. It was assumed that the recombination rate is proportional to the density of injected carriers. Two extreme cases of low injection levels and high injection levels were first considered, and the result of which was then used as the zero-order approximation in calculating the distribution of the injected minority carriers in p-n junctions. By the method of successive approximation, an analytical expression for the relationship between the injection efficiency and the injection level (i. e. the ratio of the density of injected minority carriers to that of original majority carriers) was obtained. A similar expression for the relationship between the total current density flowing through the junction and the injection level was developed on the same basis. The results of the present theory show that for an ordinary alloy junction transistor, the injection efficiency of the emitter decreases gradually as the emitter current increases. At very high

本文用一维模型计算了p-n合金结中少数载流者的一般注射理论。这里假设复合率是与注入载流者的密度成正比。首先,我们讨论了大注射和小注射的两种极端情况,这样得到的结果被用作零级近似解来计算p-n结中注入少数载流者的分布情况。用逐步近似的方法我们得到了注射效率和注射强度(即注入少数载流者的密度与原有多数载流者的密度之比)间的解析关系。在同样的基础上也得到了通过结的总电流密度和注射强度间的类似关系。这理论的结果表明;对一个平常的合金结晶体三极管来说,当发射极电流增加时,发射极的注射效率逐渐下降。在很大的注射强度下,注射效率趋近于极限值1/(1+b),其中b是电子迁移率与空穴迁移率之比。对一个具有很低注射效率的p-n合金结来说,在注射电流小的时候,注射效率是正比于通过结的总电流;当往射电流很大时,注射效率趋近于极限值1/(1+b)。理论结果还表明,在小注射情下,通过p-n合金结的总电流是正比于注射强度;而在大注射情况下,它是正比于注射强度的平方。

An equivalent circuit of transistors operating in saturation region is suggested. This circuit contains a transistor operating in active region and a diode biased in forward direction. By using this equivalent circuit, the physical meaning of storage time of transistors may be explained more intuitively. With this, the storage time in drift transistor, Which is common base connected, has been investigated. By solving the continuity equation, the steady state and the transient components of the densities of minority...

An equivalent circuit of transistors operating in saturation region is suggested. This circuit contains a transistor operating in active region and a diode biased in forward direction. By using this equivalent circuit, the physical meaning of storage time of transistors may be explained more intuitively. With this, the storage time in drift transistor, Which is common base connected, has been investigated. By solving the continuity equation, the steady state and the transient components of the densities of minority carriers in diode near the p-n-junction is obtained. By setting these two components equal in magnitude and opposite in sign, we get a formula, from which the storage time may be determined. The storage time in some special cases has been calculated. The results show that the storage time depends upon the life time of minorities and the surface recombination velocities both in base region and in collector region. This may be a guide for design a transistor with more short storage time.

半导体三极管在饱和区工作时,其等效电路可以用一个三极管及一个由集电极及基极构成的二极管联成的电路表示出来,其中三极管在有源区工作,而二极管在正向偏压下工作。这样的等效电路具有比较明显的物理意义。利用这个电路来求漂移管在一个共基极电路中脉冲工作下的储存时间。解出非平衡少数载流子的连续性方程,求出二极管p-n结附近非平衡少数载流子密度的稳定态分量及暂态分量,从而得到决定储存时间的方程。计算结果表明,储存时间与基极区域及集电极区域中非平衡载流子的寿命及表面复合速度有关。减少寿命及增加表面复合速度就可以减少储存时间。

A new method for measuring the life time of minority current carriers in semiconductors is described. Measurements are made by observing the photoconductive decay of the spreading resistance under a point contact. This method possesses the following advantages: (1) It is not necessary to cut the specimen into special form. (2) No fixed electrode has to be made to the specimen. (3) It is applicable to test inhomo-geneous specimen. (4) No particular surface treatment is necessary. (5) Apparatus used is simple...

A new method for measuring the life time of minority current carriers in semiconductors is described. Measurements are made by observing the photoconductive decay of the spreading resistance under a point contact. This method possesses the following advantages: (1) It is not necessary to cut the specimen into special form. (2) No fixed electrode has to be made to the specimen. (3) It is applicable to test inhomo-geneous specimen. (4) No particular surface treatment is necessary. (5) Apparatus used is simple and easy to operate. (6) Enough accuracy is obtainable. A theoretical analysis is given of the effects of surface recombination velocity and of varying absorption depth of the light in specimen. Experimental details and discussions are given for Ge and Si specimens. Results are in agreement with those obtained by other methods.

本文提出了一种新的测量半导体材料中少数载流子寿命的方法。这方法是测量触针下分布电阻的光电导衰退。这方法具有下列优点:(1)样品不需要切成一定形状;(2)在样品上不需要做固定电极;(3)可以检验不均匀的材料;(4)不需要一定的表面处理;(5)仪器简单,操作方便;(6)有一定的准确度。文中对表面复合速度以及光线在样品中的吸收深度的影响进行了理论分析;同时对Ge和Si样品的实验数据进行了讨论。用这方法测得的寿命基本上与其他方法的结果符合。

 
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