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equivalent circuits
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  等效电路
     Electrochemical impedance spectroscopy(EIS) investigation showed that Al-Zn co-substituted α-Ni(OH)_2 and Al-substituted α-Ni(OH)_2 have the same impedance equivalent circuits.
     交流阻抗研究表明,Ni-Al-Zn-α-Ni(OH)_2电极具有与Al取代α-Ni(OH)_2相同的阻抗等效电路图。
短句来源
     Based on the analysis of the principle, electric characteristic and equivalent circuits of quasi floating-gate transistors, a novel 0.8V OPA and 0.8 V Rail-to-Rail analog switch are proposed in TSMC 0.25μm 2P5M CMOS technology,the DC open-loop gain of the amplifier is 76.3dB, the phase margin is 75° and the unit gain width is 1.05 MHz.
     准浮栅MOS晶体管的工作原理、电气特性及等效电路的系统采用TSMC0.25μm2P5MCMOS工艺的CMOS准浮栅技术,提出了0.8V运算放大器,最大直流开环增益可以达到76.3dB,相位裕度为75°,单位增益频率为1.05MHz。
短句来源
     In theory, by use of such theories as wasting transmission line, microwave equivalent circuits, network matrix of electromagnetism and so on, the process of energy storage and energy dumping of pulse compressed system of excessive modes cylindrical and rectangular cavity is analyzed.
     在理论分析工作中,本文利用有耗传输线、微波等效电路、和电磁场的网络矩阵等理论分析了过模圆柱、矩形谐振腔脉冲压缩系统的储能,泄放过程,最终得出了过模圆柱、矩形谐振腔脉冲压缩系统的功率增益与储能效率的公式。
短句来源
     The electrochemistry impedance spectroscopies of ITO plane electrodes and ITO plane electrodes with WO_3 thin film immersed in 1 mol LiClO_4 propylene carbonate electrolyte have been studied by means of the surface process Faraday immittance expression and equivalent circuits.
     采用表面过程法拉第阻纳表达式方法与等效电路方法,研究透明ITO平面电极及带WO3薄膜层的ITO平面电极处于1 mol LiClO4丙烯碳酸酯电解液中的电化学阻抗谱.
短句来源
     In the XRD pattern the intermediates SiO,CaSiO3 and Ca2SiO4 were found in the reaction system. By fitting the AC impedance spectra with equivalent circuits,the charge transfer resistance,double layer capacitance and activation energy during the reaction were obtained.
     电脱氧后电极产物的XRD分析证实,在反应体系存在着下列中间物:SiO,CaSiO3和Ca2SiO4.通过拟合交流阻抗谱与等效电路,得到SiO2电脱氧反应的电荷传递电阻、双电层电容和活化能.
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  等值电路
     PI-and T -type Equivalent Circuits of n -phase Transmission Lines and Their Applications
     n相传输线的π、T型等值电路及其应用
短句来源
     Applying the equivalent circuits, the starting performance of the motor are calculated, and the general expressions of the starting current decreasing a factor K_(iQ), the starting torque decreasing a factor K_(mQ) and voltage decreasing a factor K_(uQ) are obtained
     利用所得到的等值电路对△—Y连接三相异步电动机起动性能进行计算,得到了起动电流下降倍数K_(iQ)、起动转矩下降倍数K_(mQ)和降压系数K_(uQ)一般表达式,并对其结果进行了必要的分析和讨论。
短句来源
     Distinct parameters are needed in those three equivalent circuits describing an identical transformer in order to obtain correct results.
     变压器的等值电路在一般计算程序中有三种表示法,同一台变压器在三种等值电路中需给出不同的参数。
短句来源
     Equivalent Circuits of the Multi-Function Balancing Transformer
     多功能平衡变压器的等值电路
短句来源
     In order to make a study of the damage to Metal Oxide Surge Arrester which is arised from very fast transient overvoltages,this paper presents the equivalent circuits of metal oxide varistor(MOV) under different surge current waves,such as 8/20? 4/10?
     为了研究快速暂态过电压对金属氧化物避雷器造成的危害,重点对氧化锌非线性电阻片在8/20μs、4/10μs、2/5μs、0.7/1.5μs等冲击电流波形下的等值电路,陡波大电流作用下的电气模型进行了分析;
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  “equivalent circuits”译为未确定词的双语例句
     The paper discusses the method of establishing active switched-capacitor filter (SCF) Z-domain equivalent circuits model using Z-domain admittance of the basic switched-capacitor (SC) circuit.
     本文讨论了用基本开关电容(SC)电路的Z域传输导纳,建立有源开关电容滤波器(SCF)等效Z域模型的方法。
短句来源
     Results of impedance measurements of some equivalent circuits and the Pt, Fe (CN)_6~(3-)/Fe(CN)_6~(4-) system agreed well with closed-form solutions or literature data, thus demonstrating the ability of the computerized measurement system.
     以电位阶跃为激励信号,对模拟电路及Pt,Fe(CN)_6~(3-)/Fe(CN)_6~(4-)体系的响应电流采样。
短句来源
     The nonlinear system is first represented by its equivalent circuits with linear and nonlinear R, L, C circiut elements.
     这个方法首先把非线性系统用非线性及线性的R,L,C线路元件等效。
短句来源
     The equivalent circuits for AC impedance spectra were ascertained with respect to measuring temperature. The electrical conductivity of La0.6Sr0.4CoO3 decreased monotonously with the increase of temperature from room temperature to 900℃, while the electrical conductivities of other compositions increased with temperature through the maximum near 600℃ and then decreased.
     在室温-900℃范围内,La0.6Sr0.4CoO3的电子电导率随温度的升高而单调降低,其它样品的电子电导率随温度的升高在600℃附近达到最大值.
短句来源
     So the determination of the spectral-domain Green's function is accomplished by the investigation of voltages and currents on the corresponding equivalent circuits.
     这样问题变成了确定不同等效传输线上的电流和电压,大大简化了谱域格林函数的推导过程,尤其是对于多层介质的情况.
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  equivalent circuits
A computer model is constructed to calculate the output parameters of these systems substituted by equivalent circuits.
      
Examples of solving model problems for first- and second-order electric equivalent circuits are presented which demonstrate the universality and efficiency of the suggested algorithm.
      
It has been concluded that the redistribution of nonequilibrium charge carriers along the interface must be taken into account in constructing equivalent circuits of actual MIS structures.
      
The simplest equivalent circuits or electroluminescent capacitors have been analyzed and studied experimentally.
      
Equivalent circuits representing the featuresof the corrosion of Ni and FeAl were proposed to fit the impedance spectra andelectrochemical parameters in the equivalent circuits were also calculated.
      
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High-frequency titration curves are discussed for various methods of experimental determination (the Q-meter, Z-meter and F-meter methods), using equivalent circuits for C-type and L-type titrating cells. It has been found that for the cases of L-type cell with Q-determination and C-type cell with Z- or F-determination, the quantity measured in the course of titration changes monotonously with .the increase of conductivity of the solution. In these cases, the high-frequency titration curve should be similar...

High-frequency titration curves are discussed for various methods of experimental determination (the Q-meter, Z-meter and F-meter methods), using equivalent circuits for C-type and L-type titrating cells. It has been found that for the cases of L-type cell with Q-determination and C-type cell with Z- or F-determination, the quantity measured in the course of titration changes monotonously with .the increase of conductivity of the solution. In these cases, the high-frequency titration curve should be similar in shape to that obtained in an ordinary conductometric titration. Two mistakes appearing in literature are here pointed out. (1) The equivalent parellel circuit and the equivalent series circuit for the C-type titrating cell do give the identical result for the value of the conductance of the solution which gives the maximum loss of high-frequency energy in the cell. (2) The appearance of a maximum high-frequency loss with increasing conduc- tance of the solution in the C-type cell is not the result of the Debye-Falkenhagen effect. The use of Pt wire electrodes in direct contact with solution for high-frequency titration is suggested. Satisfactory titration curves have been obtained with wire electrodes and a series capacitor to act as a C-type cell with much less shielding troubles.

1.對高頻滴定用的C式和L式滴定池,Q表法,Z表法及F表法测定得到的滴定曲線,與溶液電導改變的關係,用等效電路的理論,作了全面的討論。除C式滴定池Q表法測定,文獻中已有討論外,L式滴定池Q表法測定時,和C式滴定池Z表法和F表法測定時,滴定過程中測定的量都與溶液的電導值單調變化。 2.指出了文獻中的錯誤。C式滴定池應用等效串聯電路與等效並聯電路計算的結果,是完全等同的。C式滴定池的高頻電能損耗與溶液中電解質濃度的關係,與Debye-Falkenhagen效應無關。 3.提出了用鉑絲電極直接插入溶液的高頻滴定法。

An equivalent circuit of transistors operating in saturation region is suggested. This circuit contains a transistor operating in active region and a diode biased in forward direction. By using this equivalent circuit, the physical meaning of storage time of transistors may be explained more intuitively. With this, the storage time in drift transistor, Which is common base connected, has been investigated. By solving the continuity equation, the steady state and the transient components of...

An equivalent circuit of transistors operating in saturation region is suggested. This circuit contains a transistor operating in active region and a diode biased in forward direction. By using this equivalent circuit, the physical meaning of storage time of transistors may be explained more intuitively. With this, the storage time in drift transistor, Which is common base connected, has been investigated. By solving the continuity equation, the steady state and the transient components of the densities of minority carriers in diode near the p-n-junction is obtained. By setting these two components equal in magnitude and opposite in sign, we get a formula, from which the storage time may be determined. The storage time in some special cases has been calculated. The results show that the storage time depends upon the life time of minorities and the surface recombination velocities both in base region and in collector region. This may be a guide for design a transistor with more short storage time.

半导体三极管在饱和区工作时,其等效电路可以用一个三极管及一个由集电极及基极构成的二极管联成的电路表示出来,其中三极管在有源区工作,而二极管在正向偏压下工作。这样的等效电路具有比较明显的物理意义。利用这个电路来求漂移管在一个共基极电路中脉冲工作下的储存时间。解出非平衡少数载流子的连续性方程,求出二极管p-n结附近非平衡少数载流子密度的稳定态分量及暂态分量,从而得到决定储存时间的方程。计算结果表明,储存时间与基极区域及集电极区域中非平衡载流子的寿命及表面复合速度有关。减少寿命及增加表面复合速度就可以减少储存时间。

In this paper the relationships between small-signal h-parameters and elements of the natural equivalent circuit of the common emitter configuration of junction transistors are studied. From experimental results of h-parameters of two typieal alloyed PNP transistors (one 2N104 and one п-6 transistor) the relationship of h-parameters and elements of natural equivalent circuit vs operating frequency and d. c. operating condition (d.c. emitter current and d.e. collector voltage) are evaluated. Results...

In this paper the relationships between small-signal h-parameters and elements of the natural equivalent circuit of the common emitter configuration of junction transistors are studied. From experimental results of h-parameters of two typieal alloyed PNP transistors (one 2N104 and one п-6 transistor) the relationship of h-parameters and elements of natural equivalent circuit vs operating frequency and d. c. operating condition (d.c. emitter current and d.e. collector voltage) are evaluated. Results thus obtained ace then compared with results obtained from analysis based on calculations using physical constants of the transistor. The explanation of the behavior of the reverse open-circuit voltage amplification factor, μb0, of the common emitter circuit is given in detail. Characteristics of μbo and properties of h22 (the output admittance with input open) are correlated. This paper gives complete information about h-parameters and natural equivalent circuit of two transistors, serving as an important reference for both device men and research workers on transistor circuits.

本文研究面结合型晶体管共发射极线路的小讯号h参数与自然等效线路中元件的关系。根据两种合金管(2N104及Ⅱ-6晶体管)h参数的实验结果求出h参数与自然等效线路元件随频率及随直流运用状态(直流发射极电流及直流集电极电压)的相互关系。对实验结果与根据晶体管物理构造分析计算的结果进行了比较。对开路反向电压放大系数μ_(bc)的现象给予详细分析,并求出μ_(bc)与开路输出导纳h_(22)的相互关系。两套晶体管的h参数及自然等效线路的完整资料可供晶体管器件设计及线路研究者的使用。

 
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