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      valence
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  “valence”译为未确定词的双语例句
    VALENCE BAND OFFSETS OF Si/ZnS POLAR INTERFACES: A SYNCHROTRON RADIATION PHOTOEMISSION STUDY
    Si/ZnS极性界面能带偏移的同步辐射光电子能谱研究
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    Valence Subband Structure and Optical Gain of InGaAs/InP Quantum Wire
    InGaAs/InP量子线的子带结构和光学增益
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    2. Recently, InGaP/GaAs has been attracting interest as a substitution to AlGaAs/GaAs for GaAs-based HBT because the former structure has a larger valence band offset, a lower interface recombination velocity, a higher wet etching selectivity and less deep donor lever (DX center).
    2.由于InGaP/GaAs在材料性能和器件制作上具有AlGaAs/GaAs无法比拟的优势,InGaP/GaAs HBT成为目前GaAs基HBT研究和应用的主流。
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    The results of V-I nonlinear testing indicated that the macroscopical nonlinear coefficient improves as long as the ESR signal of low valence V ion becomes strong.
    V–I非线性测试结果也显示,低价态V离ESR信号越强,宏观非线性系数越大。 V2O5同时起着液相添加剂的作用,由于其低熔点使ZnO–V2O5压敏陶瓷在900℃就能致密化。
短句来源
    The results show thatthe valence band top and the conduction band bottom of superlattice (Ge_2)_1/(GaAs)_m (110)are not at the same point in the Brillouin zone and the electronic states at the bottom of conductionband display distinct 2-dimensional character For the monolayer superlattice (Ge_2)_1/(GaAs)_1, both the indirect and direct forbidden bands are very narrow.
    计算结果表明,对不同m的超晶格(Ge_2)_1/(GaAs)_m(110) 都具有间接能隙结构,而且间接导带底的电子状态具有明显的二维特性。 单层超晶格(Ge_2)_1/(GaAs)_1(110)具有非常小的间接和直接禁带宽度。
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  valence
Studies on exposure status of inhabitants to water-arsenic valence states in areas with endemic arsenism in the Datong basin in
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This study aimed to describe the distribution of water-arsenic (As) valence states and its relationship to areas with endemic arsenism in the Datong basin.
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The most common type of drinking water arsenic valence state was As(III) in the endemic disease-areas.
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This led us to conclude that the fraction of each water-arsenic valence state should be studied when determining the arsenic content of drinking water.
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The valence of atoms was determined by X-ray photoelectron spectroscopy.
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         The soft X-ray appearance potential spectroscopy (SXAPS) is a useful technique for surface analysis.The method is based on the fact that as the surface of a solid is bombarding by an electron beam, the soft X-ray fluorescence of this material as a function of the incident electron energy exhibits abrupt changes at the appearance potentials of characteristic X-rays. The main informations contained in these appearance potential peaks are revealing the binding energies of core electrons and about the density o...
            软x射线出现电势谱仪(APS)是一种表面物理仪器。它利用电子轰击固体表面时所产生的特征x射线来进行固体的表面分析,测定原子芯电子的束缚能和提供空带电子能态出度的有用信息。它不需要用能量分析器来检测出射光电子,而固有分辨率却高于任何芯能级谱仪。已制作的全套出现电势谱仪包括超高真空系统,分析管,锁定放大器和逐级扫描斜坡电压发生器等。文中给出了对金属(镍)、合金(铬镍铁、镍钨钙)、半导体(硅)等各种固体表面的实验结果.
文摘来源
         On the basis of electron injection theory, we consider that electrons should escape from the valence band and fly to the conduction band in dielectric under very high field strength. We have suggested that the initiation mechanism of treeing caused by the combined effect of emissions of electrode and dielectric in an electric field, and deduced the corresponding v-t characteristic Which has been fully justified by experiments. Finally we have also fully discussed the phenomena in our experiment.
            本文在电子注射理论的基础上,进一步考虑到在高电埸的作用下,介质内电子有离开价带,跃迁到导带的现象,提出了埸致电极和埸致介质发射综合效应所导致的树枝引发机理,推出了聚乙烯树枝引发的V—t特性,并得到实验证明,最后,还讨论了有关的实验现象。
文摘来源
         Taking the hybrid bonds in the semiconductors of diamond and zinc-blende struc-ture as basic functions,a systematic method of classifying the atomic bond functionsaccording to the crystal symmetry and of constructing the symmetric wave functionsis developed.A simple method for calculating the interaction matrix elements is alsoproposed.The Si cluster model is calculated on the basis of the tight binding methodThe local Green's function derived from the cluster energy levels and the wavefunctions is in good ...
            本文以金刚石和闪锌矿结构半导体中的杂化键作为基函数,建立了一套将原子键函数按照晶格对称性分类以及组成对称化函数的系统方法.并提出了一种简易的求相互作用矩阵元的方法.在紧束缚方法的基础上,用集团方法计算了Si集团.由集团能级和波函数计算的局域格林函数与由能带计算的格林函数符合得很好.说明只要集团不是太小,集团能级是有物理意义的,连同权重因子|<0|n>|~2,它反映了晶体的态密度.还论证了集团方法不能求得价带顶和导带底的精确位置.
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