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    Engineering Design and Related Studies on the Free Vortex Aerodynamic Windows of High Energy Lasers
    高能激光器自由旋涡气动窗口的工程设计及其相关研究
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    Numerical Analysis of Printed Windows in Rectangular Waveguides
    矩形波导印刷窗口的数值分析
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    STUDY ON THE LASER INDUCED DAMAGE PROCESS OF THERMODYNAMICS AND PROTECTION OF INFRARED WINDOWS
    红外窗口的激光损伤热过程及保护的研究
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    Control technique of optical chaos for period windows
    光学混沌之周期窗口控制技术
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    Unstable Boundaries, Windows in Chaotic Domains and Output Oscillation in a Twyman-Green Electro-Optical Bistable System
    Twyman-Green型电光双稳系统的非稳边界、混沌区窗口及输出振荡
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    PC Windows CAD and CAI Cross Applying System About the One Dimension Silicon Microelectronic Integration Technique and Device
    PC WINDOWS一维硅微电子集成工艺及器件CAD和CAI交互系统
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    Control of Multi Inverters by Using VC++5.0 Under Windows98
    Windows98下利用VC++5.0控制多台变频器
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    The practical experience in designing a circuit board by means of the protel for windows
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For a fairly general class of orthonormal scaling functions and wavelets with regularity exponents n, we prove that the areas of the time-frequency windows tend to infinity as n → ∞.
      
When, in addition, the Tolimieri-Orr condition A is satisfied, the minimum energy dual windowoγ ε L2(?) can be sampled as well, and the two sampled windows continue to be related by duality and minimality.
      
Characterization and Computation of Canonical Tight Windows for Gabor Frames
      
Iterative Algorithms to Approximate Canonical Gabor Windows: Computational Aspects
      
We consider two strategies for scaling the terms in the iteration step: Norm scaling, where in each step the windows are normalized, and initial scaling where we only scale in the very beginning.
      
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The paper discusses the processes of fabricating high sensitivity thick tri-alkali antimonide photocathode on inside surface of fibre-optic window in an image intensifier. Following data have been obtained for 15 samples: mean integral sensitivity 3251μA/lm, minimum sensitivity 270μA/lm,maximum sensitivity 440μA/lm. When λ is 0.9μm, IR response is usually at approximate 6mA/W, the highest being 10.8 mA/W.Peak of photo sensitivity distribution occurs at 0.55 to 0.65μm, wavelength threshold can be extended...

The paper discusses the processes of fabricating high sensitivity thick tri-alkali antimonide photocathode on inside surface of fibre-optic window in an image intensifier. Following data have been obtained for 15 samples: mean integral sensitivity 3251μA/lm, minimum sensitivity 270μA/lm,maximum sensitivity 440μA/lm. When λ is 0.9μm, IR response is usually at approximate 6mA/W, the highest being 10.8 mA/W.Peak of photo sensitivity distribution occurs at 0.55 to 0.65μm, wavelength threshold can be extended to above 0.95μm.

本文讨论了厚三碱光电阴极在实用光学纤维面板输入窗象增强管中的制备工艺和有关问题。在15只样管中,光电阴极的平均积分灵敏度为325μA/lm,最低为270μA/lm,最高为440μA/lm。红外响应一般为6mA/W左右(波长为0.99m处),最高可达10.8mA/W。光谱灵敏度峰值分布在0.55~0.65μm处,阈值波长延伸到0.95μm以上。 文中论述了厚三碱光电阴极的结构。在此基础上提出的改进工艺,可使产品一致性和成品率得到提高,并使制备时间大大缩短。

Deep-level impurity or defect centres in semiconductors are very often multiple-levelled.It is shown that if one level of such a multiple level centre is near mid-gap,one can obtain the ratio of its electron and hole emission rates e_n(T)/e_p(T) (thermal)from the ratio of its DLTS peak to that of another level of the centre (or from theratio of their initial transient capacitances).With additional use of the value of theDLTS rate window (or time constant of the transient capacitance), the values of e_n(T)and...

Deep-level impurity or defect centres in semiconductors are very often multiple-levelled.It is shown that if one level of such a multiple level centre is near mid-gap,one can obtain the ratio of its electron and hole emission rates e_n(T)/e_p(T) (thermal)from the ratio of its DLTS peak to that of another level of the centre (or from theratio of their initial transient capacitances).With additional use of the value of theDLTS rate window (or time constant of the transient capacitance), the values of e_n(T)and e_p(T) of the mid-gap level can be separately determined.Therefore one canfurther determine the level position in the gap and the extrapolated value of theforbidden gap width at OK.DLTS (high temperature) and transient capacitance(low temperature) measurements have been made on Au-doped Si and the value fore_n(T)/e_p(T), e_n(T), e_p(T) of the gold acceptor level are determined.The results areclose to those obtained by other methods as reported in the literature.The accuracyof the method is discussed and the possibility of using this method for identificationof impurity and defect centres is indicated.

半导体中的深能级杂质缺陷在禁带中往往有好几个能级,如果其中有接近禁带中央的能级,它在载流子复合等问题中起重要作用.本文指出利用接近禁带中央的能级在深能级瞬态谱(DLTS)中的峰高与其它能级的峰高的比值或利用相应的瞬态电容的初始值的比值,可以求出接近禁带中央的那个能级的电子热发射率与空穴热发射率的比值C_n(T)/e_p(T),结合DLTS的率窗或瞬态电容的时间常数,可以同时确定该能级的e_n(T)及c_p(T),并可进而求出该能级在禁带中的位置、禁带宽度在绝对零度的外插值等参数.以掺金的硅为例应用上述方法,在较高的温度范围用DLTS,在较低的温度范围用瞬态电容,求得了金的受主能级的c_n(T)/c_p(T).c_n(T)、c_p(T)及其它参数,与文献所载的用其它方法求出的相近.文中还讨论了这种方法的误差以及这种方法在识别杂质缺陷方面的可能作用.

A solar blind photomultiplier which has a TeKCs photocathode and nine TeKCs dynodesis presented in this paper. It is of a circular cage structure, housed in a quartz envelope, with a side window. Its properties and applications are described.

本文介绍了具有侧窗式石英外壳和圆笼形九级倍增系统,光电阴级和倍增级均为TeKCs材料的日盲型光电倍增管的结构、光电性能及应用情况。

 
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