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junction
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    Study of Organic Thin-film Field Effect Transistors and High Power Remote Junction Lasers
    有机薄膜场效应晶体管和高功率远激光器的研究
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    P-N junction formation by Te ion implan tation into solution-grownPbSnTe
    Te~+离子注入溶液生长的Pb_(1-x)Sn_xTe制备P-N
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    THE PREPARATION OF LPE GaAs MATERIALS FOR HIGH-LOW JUNCTION IMPATT DIODES
    高-低IMPATT二极管用LPEGaAs材料的研制
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    Problem of Analytical Solutions of Abrupt pin Junction
    突变pin的解析解问题
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    Design and Research of 7-10 GHz p-n junction GaAs IMPATT Diodes
    7-10千兆赫pn砷化镓功率雪崩管的设计和性能研究
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    LPE growth of n+InSb PHg_(1-x)Cd_xTe hetero junction
    n~+InSb/PHg_(1-x)Cd_xTe异质结的液相外延生长及红外探测器
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    Single Junction a-Si:H Solar Cells with Conversion Efficiency of 10.2%
    能量转换效率达10.2%的非晶硅单结太阳能电池
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    Investigation of Single Junction Integrated Type a-Si Solar Cell with Area of 100cm~2 and Conversion Efficiency of 8.55%
    效率为8.55%的100cm~2单结集成型非晶硅太阳电池的研究
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    LPE GROWTH OF GaSb/ Al_xGa_(1-x)Sb HETERO JUNCTION STRUCTURE IN THE Sb-RICH REGION
    富Sb状态下GaSb/AlGaSb异质结的液相外延生长
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    A Boundary Element Numerical Method for Analysis of Field in High-Voltage Junction Termination
    高压终端结构场分析边界元数值方法
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  junction
By comparing ECV results with those of secondary ion mass spectroscopy (SIMS), it is found that the dopant concentration profiles in heavily-doped p+ layer as well as junction depths measured by ECV are in good agreement with those measured by SIMS.
      
These toxins are usually broad-spectrum and act on the central nervous system or at the neuro-muscular junction.
      
Characteristics of the Surface-Intrinsic Josephson Junction
      
Thus, the characteristics of the surface junction consisting of the surface Cu-O double layers remarkably differ from those of the junctions deep in the stack, which will be referred to as ordinary IJJs.
      
Furthermore, by shunting the surface junction resistively, we are able to observe the AC Josephson effect at 3-mm waveband.
      
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This paper describes a detailed analysis of conversion properties of junction transistors. A new parameter "the effective conversion transconductance" is introduced for characterizing transistor converters. The effective conversion transcon-ductance of transistor converters using a PNP transistor operated at different oscillatory conditions and at various signal frequencies are studied. Main differences between transistor converters and vacuum tube converters are compared.

本文讨论面结型晶体管变频性能的分析。提出新参数“有效变频跨导”来决定晶体管变频器的特性。研究晶体管变频器在各种振荡状况下及不同讯号频率时对有效变频跨导的影响。比较晶体管变频器与电子管变频器的主要区别。

The equivalent circuit of a negatively biased varactor at X band is investigated in this paper. Three methods for measuring the Qd-values and the equivalent circuit parameters of varactors are suggested. The first method is based on the measurements of the input impedance at various bias voltages and the cartridge impedance of the diode. This method is suitable to a varactor diode with a series resistance rs which is a function of the negatively biased voltage. By the second method, the Qd-value and the varactor...

The equivalent circuit of a negatively biased varactor at X band is investigated in this paper. Three methods for measuring the Qd-values and the equivalent circuit parameters of varactors are suggested. The first method is based on the measurements of the input impedance at various bias voltages and the cartridge impedance of the diode. This method is suitable to a varactor diode with a series resistance rs which is a function of the negatively biased voltage. By the second method, the Qd-value and the varactor parameters are simply calculated from the measurements of the input impedance, provided that equivalent capacitance of the cartridge is known. However, this method is only applicable to the case that the series resistance rs is independent of the negatively biased voltage. In the third method the parameters of a varactor diode are determined by the measurements of the input impedance only at negative biases and the junction capacitance at low frequency; consequently, a method is given for measuring some varactors, such as GaAs, which is inhibited to be biased positively. Experimental results of the measurements of varactor parameters show that they are well checked with each other for all three methods.

本文研究了X波段上半导体变容二极管在负偏压下的等效电路,提出了测量二极管Q_d值和等效电路各参数值的三种方法。第一种方法是测量二极管在各偏压点下的输入阻抗与管壳阻抗。这种方法的突出优点是适合于二极管串联电阻r_s随负偏压而变化的情况。第二种方法,在已知等效管壳电容的条件下,由测得的输入阻抗就能直接求得二极管的Q_d值和等效电路的各参数值;但此法要求串联电阻r_s不随负偏压而变化。第三种方法是测量二极管在各负偏压点下的输入阻抗与低频结电容C(V)来求得二极管的结参数;因而,为某些二极管,如砷化镓二极管,提供了一种测试方法。实验结果表明用上述三种方法所求得的Q_d值和等效电路的各参数值有很好的一致性。

A. C. Josephson effect may be used to determine 2e/h accurately. In this article, the fabrication of film tunnelling junction and the measuring set-up in our laboratory are described. Some experimental results are also given.

利用交流约瑟夫逊效应可以精确地测定比值2e/h,本文描述了我们制作薄膜隧道结的过程,测量约氏效应的实验装置以及部分实验结果。

 
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