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   hot filament cvd 的翻译结果: 查询用时:0.208秒
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hot filament cvd     
相关语句
  热丝cvd
     STRUCTURE ANALYSIS OF C N THIN FILMS PREPARED BY HOT FILAMENT CVD
     热丝CVD法制备C-N薄膜的结构分析
短句来源
     THE CONTROL OF GRAPHITE COMPONENT IN DIAMOND THIN FILMS GROWTH BY THE HOT FILAMENT CVD METHOD
     热丝CVD方法生长金刚石薄膜中石墨成份控制
短句来源
     Manufacturing Technology and Application of Hot Filament CVD Diamond Film Coated Tools
     热丝CVD金刚石薄膜涂层工具的制备技术及应用研究
短句来源
     Effects of Assistant Methods on Growth Rate of Diamond Deposited by Hot Filament CVD
     辅助方法对热丝CVD金刚石生长速率的影响
短句来源
     Study on Diamond Thin Films with Bias Assisted Plasma Hot Filament CVD
     辅助偏压等离子体热丝CVD方法制备金刚石薄膜的研究
短句来源
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  热灯丝cvd
     STUDY OF BORON DOPED DIAMOND FILMS BY HOT FILAMENT CVD
     热灯丝CVD金刚石膜硼掺杂效应研究
短句来源
     Heteroepitaxial Diamond Films Growth on Si(100) by Emission Electron Via Hot Filament CVD
     利用发射电子法经由热灯丝CVD在Si(100)上合成局域异质外延金刚石膜
短句来源
     Diamond films have been grown on a single crystal C-BN substrate by the hot filament CVD method,and heteroepitaxial growth of diamondon the C-BN(100)facets was observed.
     用热灯丝CVD方法在C-BN单晶衬底上制备出金刚石膜,并且在C-BN(100)面上观察到金刚石的异质外延。
短句来源
     In the paper, the enhancing process of diamond nucleation by negative substrate bias in hot filament CVD system was analyzed.
     对利用热灯丝CVD沉积金刚石膜时负衬底偏压增强金刚石的核化过程进行了分析。
短句来源
     Heteroepitaxial diamond films were grown on Si(100) via electron emission with a bias voltage, by using microwave plasma CVD and hot filament CVD.
     利用负衬底偏压和发射电子增强核化的方法 ,通过微波等离子体和热灯丝 CVD法在 Si (10 0 )上合成出了高度定向的异质外延金刚石膜。
短句来源
  热丝化学气相沉积
     R & D of Miniature Hot Filament CVD System
     热丝化学气相沉积系统的小型化研究与开发
短句来源
     Raman scattering of diamond films prepared by hot filament CVD method has been measured.
     本文报道热丝化学气相沉积法(HFCVD)生长金刚石薄膜的喇曼散射结果.
短句来源
  热丝cvd法
     INTRINSIC STRESS IN DIAMOND FILM GROWTH BY HOT FILAMENT CVD
     热丝CVD法金刚石薄膜宏观内应力分析
短句来源
     Synthesis of Nanocrystalline Diamond Films Deposited by Hot Filament CVD
     热丝CVD法生长纳米金刚石薄膜的研究
短句来源
     The paper describes the synthesis of diamond films on the silicon and the hard alloy substrate by hot filament CVD technique.
     在硅和硬质合金基体上,用热丝CVD法生长出金刚石薄膜。
短句来源
     Diamond forming process using hot filament CVD method is investigated. The function relationship between rate of diamond nucleation and later growth on silicon wafer with buckytube coating and deposition time under certain engineering conditions has been established.
     本文对热丝CVD法沉积金刚石的形成过程进行了研究,建立了以巴基管为涂层在硅片上沉积金刚石薄膜的成核率以及生长速率随时间的变化曲线。
短句来源
     This paper presents the principle of the formation of diamond coating by the chemical vapour deposition (CVD) method and manufacture of coated dies. A nanometer diamond composite coating was formed on the surface of the WCCo hard alloy compacting die by the hot filament CVD method.
     本文简要介绍了化学气相法 (CVD)沉积金刚石薄膜原理和涂层模具的制备方法 ,以 WC- Co硬质合金紧压模为衬底 ,用热丝 CVD法沉积得到纳米金刚石复合涂层。
短句来源

 

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  hot filament cvd
The diamond films of 5?μm thickness and boron content between 200?ppm and 3000?ppm were prepared by the hot filament CVD technique on niobium substrate and mounted in a Teflon holder as rotating disk electrodes.
      
An attempt has been made to deposit CVD diamond coating on conventional carbide tool using hot filament CVD process.
      
Diamond is deposited on the sidewall of inlet with Hot Filament CVD (HFCVD).
      
An n-type semiconducting diamond film has been synthesized by the hot filament CVD method using diphosphorus pentaoxide as the doping source.
      
This is primarily attributed to the hot filament CVD growth conditions.
      
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Vacuum evaporating device which was designed by us is used to grow dia-mond films on the substrate of silicon single crystals from a mixture of CH_4 and H_2 gasesat lower pressure by hot-filament CVD method.The results of X-ray diffraction,Ramanspectrum and SEM analysis show that the films present polycrystalline diamond strueture,the process of the films growth is stable and the repeatability of results is excellent.Mecha-nism of growth of diamond films are also investigated.

在低压下,以甲烷和氢的混和气为原料,应用热丝 CVD 法,在 Si 基片上生长出了金刚石薄膜。经 X 射线衍射、激光刺曼光谱和扫描电子显微镜分析,生长产物呈多晶金刚石结构。探讨了金刚石薄膜的生长机理。

In the process of deposition of diamond film on the monocrystalline silicon plate by the hot-filament CVD method, diamond microcrystallines will grow preferably along the defects on the surface of silicon matrix and the density of micro crystallines is much greater than those on the untreated smooth surface. The micro cry stallines SiC was detected in the in- terface between diamond film and silicon substrate by micro electron probe, HUTEM and elec- tron diffraction. It is proposed that, in...

In the process of deposition of diamond film on the monocrystalline silicon plate by the hot-filament CVD method, diamond microcrystallines will grow preferably along the defects on the surface of silicon matrix and the density of micro crystallines is much greater than those on the untreated smooth surface. The micro cry stallines SiC was detected in the in- terface between diamond film and silicon substrate by micro electron probe, HUTEM and elec- tron diffraction. It is proposed that, in CVD, nucleation of diamond microcrystallines depends on the possibility of chemical bond formation bewteen carbon and silicon substrate materials.

运用热丝CVD技术在单晶硅片上沉积金刚石膜,金刚石微晶将优先在基片表面缺陷处生长。经研磨粗糙的硅基材表面上金刚石的晶粒密度,要比未经任何处理的光滑硅表面上的大得多。利用扫描电镜、电镜能谱、超高压透射电镜、电子衍射等分析技术检测样品,在金刚石膜/硅界面处检测到了微晶碳化硅。本文认为,CVD金刚石在硅基材上的成核,取决于金刚石与硅基片材料间形成化学键的难度,能成键才能成核。

The diamond films are prepared by hot-filament CVD. The feedstock is gaseous butane(C_4H_(10)) and the characteristics of the diamond film are analyzed by its Raman spectrum, scanning electron microscopy and X-ray diffraction spectroscopy. The results show that the quality of these films are related to the tempera- ture of filament and substrate, the proportion of butane to hydrogen and the reactor pressure. Nucleation is affected by the disposition of the surface on the substrate. The...

The diamond films are prepared by hot-filament CVD. The feedstock is gaseous butane(C_4H_(10)) and the characteristics of the diamond film are analyzed by its Raman spectrum, scanning electron microscopy and X-ray diffraction spectroscopy. The results show that the quality of these films are related to the tempera- ture of filament and substrate, the proportion of butane to hydrogen and the reactor pressure. Nucleation is affected by the disposition of the surface on the substrate. The mechanism of the growth of the diamond film is tried to be interpreted by the crystal growth and phase transform theories.

金刚石薄膜的制备与热丝温度、衬底温度、工作室压强及反应气体浓度有关,氢原子具有抑制石墨生长的作用,衬底的表面处理对金刚石薄膜的生长有很大影响。本文还试图用晶体生长和相变理论解释金刚石薄膜的生长过程。

 
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