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transmutation
相关语句
  嬗变
     The Type Transmutation of Hong Kong Comedy Movie in 1997-2003
     1997-2003香港喜剧电影的类型嬗变
短句来源
     Study of Transmutation in Modular Fast Reactor Using MOX Fuel
     MOX燃料模块快堆的嬗变研究
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     Recently for transmutation of spent nuclear fuel, the Accelerator Driven System is introduced.
     为对核废物进行嬗变,最近提出了加速器驱动的次临界系统(Accelerator Driven System,简称ADS)。
短句来源
     Study of Transmutation for 238Pu, 24cpu and 242Pnin High Level Radioactive Wastes inFusion--Fission Hybrid Reactor
     高放废物中~(238)Pu、~(240)Pu、~(242)Pu在聚变-裂变混合堆内的嬗变研究
短句来源
     Transmutation of Lineage in Modernization
     现代化进程中宗族的嬗变
短句来源
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  演变
     The transmutation of operational patterns of tourism enterprises is the result of the pulling of tourism demand and the pushing of technology.
     旅游企业的运作模式演变是旅游需求拉动和技术推动的结果。
短句来源
     The Transmutation of the Pattern of Government Obligation and Its Revelation
     政府责任模式的演变及其启示
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     This paper introduces the research a nd utilization of DOE report,including the transmutation of DOE and its sci -tech information literatur e organization as well as DOE report,the origin and amount of DOE report,t he contents and publishing forms of DOE report,t he numbering forms of DOE report,and the retrieval and acquisition modes of DOE report,etc.
     介绍了对DOE报告的研究和利用,包括美国能源部及其科技情报文献机构与DOE报告的演变情况,DOE报告的来源及数量,DOE报告的内容和出版形式,DOE报告的编号形式以及DOE报告的检索与获取方式。
短句来源
     Monitoring transmutation of wheat strip rust races in 1991-1994 revealed that the race Tiaozhong 29 could be still considered superior toxic one in Shandong Province, which had strong toxicity to most of wheat varlettes in production.
     1991~1994年对条锈菌生理小种演变情况进行监测研究结果表明,条中29号仍是山东省当前优势毒性小种,其对多数生产品种具有较强毒力,对鲁麦16、鲁麦19及多数新品系和抗源则无毒性或弱致病性;
短句来源
     Evolution of apparel discloses the historical change, economic development and of cultural and aesthetic transmutation.
     从服饰的演变中可以看出历史的变迁、经济的发展和文化审美意识的嬗变。
短句来源
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  蜕变
     Causes for defects induced by neutron transmutation doping in semiconductors are analysed,such as radiation damage of fast nentrons,β radiation of atom trasmutation,and displacement damage resulted from γ radiation recoil.
     讨论了半导体材料中子嬗变掺杂( N T D) 诱生缺陷的三种原因,即快中子辐射损伤、原子蜕变β辐射及γ辐射反冲造成的位移损伤。
短句来源
     Nationalism is synchronous with the rise,development and transmutation of modern west capitalist countries.
     民族主义与近代西方资本主义国家的产生、发展和蜕变是同步的。
短句来源
     Rise and Transmutation of Nationalism in Modern West
     民族主义在近代西方的缘起和蜕变
短句来源
     In fact, the life cycle should include the periods of natural monopoly, all-round competition, industrial regrouping, and transmutation and renewal.
     实际上产业生命周期应该包括自然垄断、全面竞争、产业重组和蜕变创新四个阶段。
短句来源
     Road of the peanuts' transmutation
     上海塔瑞莎健康科技有限公司 小企业的蜕变之路
短句来源
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  “transmutation”译为未确定词的双语例句
     Al_2O_(3sf).SiC_p/Al mechanical behaviour of compression and transmutation mechanism at high temperature and in semi-solid state
     Al_2O_(3sf)·SiC_p/Al复合材料的压缩变形力学行为及机制
短句来源
     The research studied the relationship between the thickness of IPMC and its transmutation range and noticed that the tip stress of the composite material produced increased with the thickness h, and it satisfied the functional relationship δ=3.96×10 -6×h3.
     复合材料的电动性能还与其厚度有关 ,随着复合材料厚度 h的增加 ,顶端产生的应力δ与其成指数关系上升 ,δ与 h之间存在近似函数关系δ=3.96× 10 - 6 × h3。
短句来源
     In the special case of sl_3 WZNW theory, we show explicitly the isomorphism between W[(111)_2] and W[(12)_1] and discuss the constraint-gauge condition transmutation between the O'Raifeartaigh gauges and the transmutation of conformal weights under the isomorphism transformation.
     在sl_3的情形,我们对W[(111)_2]与W[(12)_1]的同构性作了明显的证明,并讨论了在同构变换下它们的O'Raifeartaigh规范间的约束-规范条件相互转化以及共形谱的改变等问题。
短句来源
     Besides, some research methods of FGM are also presented, such as diffraction method, optimizing method, transmutation model and the model of design modeling and so on.
     还综述了功能梯度材料常用的一些研究方法,如衍射法、优化方法、变形模型、设计的模拟模型以及功能梯度材料在内燃机零部件中应用研究的情况及研究的方法.
短句来源
     Based on the two-stand continuous rolling,according to H profiled bar continuous rolling system model and tension model,the transmutation structure controller of fuzzy PID is applied to realize distension control or micro-tension control.
     以二机架连轧为基础,根据H型钢连轧装置的系统模型和张力模型,采用模糊PID的变形结构控制器,实现无张力控制或微张力控制。
短句来源
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  transmutation
A fast neutron spectrum field can be produced in the fast neutron zone and used for the transmutation of minor actinides (MAs).
      
An epithermal neutron zone between the fast neutron zone and the thermal neutron zone can be established for the transmutation of longlived fission products (LLFP).
      
The molten salt reactor (MSR), which is one of the generation IV reactors, can meet the demand of transmutation and breeding.
      
A set of wafers with different SEC values has been manufactured using the technology silicon neutron-transmutation doping.
      
Physicochemical Behavior of Impurity Atoms Formed by Nuclear Transmutation in the Course of Post-Radiation Annealing of Irradiat
      
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Neutron transmutation doped silicon was studied with DLTS. After annealing in nitrogen at 850℃, three deep levels were found in the gap locating at 0.2eV, 0.23eV, 0.49eV respectively below the conduction band. It is suggested that they are related to the complex consisted of neutron irradiation damage and quenched-in defects, excited impurities, the complex of excited impurities and defects of neutron irradiation, respectively.

用DLTS方法研究了在氮气氛下径850℃退火的中子嬗变掺杂硅,发现存在三个深中心,它们在禁带中的位置E_C—E_T为0.20,0.23,和0.49eV。他们可能分别是中照损伤与淬火引进缺陷的复合体、激化杂质及中照损伤与激化杂质的复合体。

The fabrication technology of a miniature Si (Li) β-ray radiation detector used to measure the distribution of 31P in neutron transmutation doped silicon is mainly described in this paper.

本文主要叙述中子嬗变掺杂(NTD)单晶硅中~(31)P分布测量使用的小型Si(Li)β辐射探测器的制备工艺。

Transmutation doping is a well established technique for obtaining low doping concentration in silicon.Similarly, in GaAs,this technique can be very useful in order to introduce low doping without compensation.However, these is a lack of data concerning the damage introduced by thermal neutron irradiation and the effect of annealing on the defects appearing during the irradiation.In this work we have studied the defects appearing during the neutron irradiation and the effect of annealing by means of photoluminescence...

Transmutation doping is a well established technique for obtaining low doping concentration in silicon.Similarly, in GaAs,this technique can be very useful in order to introduce low doping without compensation.However, these is a lack of data concerning the damage introduced by thermal neutron irradiation and the effect of annealing on the defects appearing during the irradiation.In this work we have studied the defects appearing during the neutron irradiation and the effect of annealing by means of photoluminescence at 77K.The starting samples were (111) oriented GaAs slices doped with Si and grown by the horizontal-zone method. Some parameters of the starting sample are given in the table.The thermal neutron integrated incident flux was 1.02×1017neutrons/cm2. The samples were annealed in vacuum at temperature of 310℃, 350℃, 400℃ or 500℃ for an hour after irradiation.The experimental set-up for the photoluminescence measurements is just like the typical one. The excitation light source was a 20 mW Helium-Neon laser modulated at a frequency of 1kHz.The following three experimental results are observed: 1. The PL intensity is decreased to less than one thirty-sixth after neutron irradiation; 2. The PL intensity increases after thermal annealing. When the annealing temperature is over 250℃,the integrated intensity increases obviously. When the annealing temperature is equal to about 400℃ the PL integrated intensity recovers to its starting level;3. Three emission peaks at about 1.36 eV, 1.30 eV and 1.26 eV appear when the annealing temperature is above 400℃.Experimental result 1 shows that non-radiation centers are produced in GaAs by neutron irradiation. We believe that the non-radiation centers are vacancy clusters. If we suppose that the vacancy clusters disociate into small one begining at 250℃ and VGa are released at 400℃ or higher temperature, the experimental facts can be explained,

研究了高掺硅的n型GaAs在中子辐照前后和150℃—500℃等时热退火以后的光致发光光谱。观察到在中子辐照后积分发光强度降低为辐照前的1/36。在退火温度超过250℃时,积分发光强度显著增长,当退火温度达400℃以上时,在带边峰的低能侧出现能量为1.35eV、1.30eV和1.26eV的发光峰。假设250℃退火阶段对应于较大的空位团分解为较小的空位团,400℃退火阶段对应于较小的空位团分解出V_(Ga),可以较好地解释实验现象。

 
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