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semiconductor
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  “semiconductor”译为未确定词的双语例句
     Transport in Semiconductor Superlattice and Phase Transition of BEC in Optical Lattice
     超晶格输运与光格子中BEC的量子相变
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     Tunable Wavelength Conversion Based on FWM in Semiconductor Fiber Ring Laser
     基于SFRL的FWM型可调谐全光波长转换器的研究
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     The Solution Synthesis, Microstructure Characterization and Mechanism Studies of Low Dimensional II-VI、III-V Semiconductor Nanocrystals
     低维II-VI、III-V族纳米材料的液相合成、微结构表征与机理研究
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     Study of MOCVD TiN in Advanced Semiconductor Manufacturing
     MOCVD TiN薄膜在先进集成电路制造中应用的研究
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     The Current-voltage Characteristics in Doped Mn Chalcogenide Glass Semiconductor As_(35)Te_(55)Si_(10)
     掺Mn的硫系玻璃半导体As_(35)Te_(55)Si_(10)的电流—电压特性
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  相似匹配句对
     Semiconductor Refrigerator
     半导体冷藏箱
     Semiconductor nanomaterial
     半导体纳米材料
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  semiconductor
CdS semiconductor nano-films were grown on ITO glass substrates by means of chemical bath deposition (CBD), with Cd(NO3)2 as Cd ion and (NH2)2CS as S ion sources.
      
The sensitive unit of the accelerometer is the metal-oxide semiconductor (MOS) ROs located on silicon beams.
      
The coupling ratio of the two MMI couplers deviates from 50:50 but the deviation is nearly the same, which is decided by good uniformity of semiconductor planar lightwave circuit (PLC) process.
      
An ultrasonic linear motor is proposed and fabricated by using the longitudinal and bending vibration double mode bolt-clamped Langevin type transducer to meet high power and speed requirements in the aerospace and semiconductor industries.
      
The electronic properties of SWCNTs can be modified by adsorbate atoms and metal-semiconductor and semiconductor-semi-conductor transitions can be achieved by the doping of alkali atoms.
      
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The amplitude distribution of narrow hand semiconductor noise in junction type OC70, OC71 and point contact type 2N32A transistors were measured experimentally by the "maximum amplitude" method. It is found that the amplitude distribution of nai-row band semiconductor noise agrees with that of the normal law distribution.

本文中描述用振幅峰值的方法,测量面接触型晶体管OC70,OC71和点接触型晶体管2N32A内窄频带低频率噪声的振幅分布。测量结果证明窄频带晶体三极管噪声的振幅分布,和遵守正态律的振幅分布相符合。

The relations existing between the semiconductivity, the chemical structure and the physico-chemical properties of the corresponding compounds have been studied by many authors, and a number of empirical formulas for the calculation o?the energy gaps haye been proposed. In this paper the authors on basis of the periodic law suggest an empirical formula, from which one can calculate the energy gaps of intrinsic semiconductors with the ZnS-structure type in terms of the "Column number" (l) and the "row number"...

The relations existing between the semiconductivity, the chemical structure and the physico-chemical properties of the corresponding compounds have been studied by many authors, and a number of empirical formulas for the calculation o?the energy gaps haye been proposed. In this paper the authors on basis of the periodic law suggest an empirical formula, from which one can calculate the energy gaps of intrinsic semiconductors with the ZnS-structure type in terms of the "Column number" (l) and the "row number" (n) of the elements in the corresponding compounds. The calculations agree fairly well with the experimental data.

Pearson,Suchet,Manca等曾应用结构化学的参数讨论了本征半导体的禁带宽度的变化规律及其与物理化学性质的联系,这些研究工作都是很有意义的,在这些研究工作的启发下,本文作者试图以周期律为指导,探求具有ZnS结构类型的本征半导体化合物的禁带宽度变化的规律,并提出了一个依据化合物中元素在周期表中的位置计算其禁带宽度的经验公式,依此公式所得的计算值与实验值相当符合,但其物理意义则有待于深入探讨.

A new method for measuring the life time of minority current carriers in semiconductors is described. Measurements are made by observing the photoconductive decay of the spreading resistance under a point contact. This method possesses the following advantages: (1) It is not necessary to cut the specimen into special form. (2) No fixed electrode has to be made to the specimen. (3) It is applicable to test inhomo-geneous specimen. (4) No particular surface treatment is necessary. (5) Apparatus used is simple...

A new method for measuring the life time of minority current carriers in semiconductors is described. Measurements are made by observing the photoconductive decay of the spreading resistance under a point contact. This method possesses the following advantages: (1) It is not necessary to cut the specimen into special form. (2) No fixed electrode has to be made to the specimen. (3) It is applicable to test inhomo-geneous specimen. (4) No particular surface treatment is necessary. (5) Apparatus used is simple and easy to operate. (6) Enough accuracy is obtainable. A theoretical analysis is given of the effects of surface recombination velocity and of varying absorption depth of the light in specimen. Experimental details and discussions are given for Ge and Si specimens. Results are in agreement with those obtained by other methods.

本文提出了一种新的测量半导体材料中少数载流子寿命的方法。这方法是测量触针下分布电阻的光电导衰退。这方法具有下列优点:(1)样品不需要切成一定形状;(2)在样品上不需要做固定电极;(3)可以检验不均匀的材料;(4)不需要一定的表面处理;(5)仪器简单,操作方便;(6)有一定的准确度。文中对表面复合速度以及光线在样品中的吸收深度的影响进行了理论分析;同时对Ge和Si样品的实验数据进行了讨论。用这方法测得的寿命基本上与其他方法的结果符合。

 
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