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semiconductor
相关语句
  半导体
    Beam Properties and Beam Combining Technique for Semiconductor Lasers
    半导体激光光束的特性及其耦合技术
短句来源
    Research of Semiconductor Laser Optical Coatings Technology
    半导体激光器光学膜技术研究
短句来源
    The Research about the Noise for the Reliability of High Power Semiconductor Laser and Bipolar Transistor
    噪声用于半导体大功率激光器及双极晶体管可靠性研究
短句来源
    The Study of Semiconductor Quantum-well Lasers Theory Model and Application in the Computer Simulation
    半导体量子阱激光器理论模型的研究及其在计算机模拟中的应用
短句来源
    Study on High Efficiency Coupling Properties for Semiconductor Laser Diodes to Optical Fibers
    半导体激光器与光纤高效耦合特性的研究
短句来源
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  半导体材料
    A 9.1μm CO_2 LASER FOR MEASURING MICRO-DISTRIBUTION OF OXYGEN IN SEMICONDUCTOR MATERIAL
    用于测量半导体材料氧含量的9.1μmCO_2激光器
短句来源
    INVESTIGATION OF OPTICAL NONLINEARITIES IN LAYERED SEMICONDUCTOR GaSe
    层状半导体材料GaSe光学性质的研究
短句来源
    Growth of Semimagnetic Semiconductor Cd_(1-x)Mn_xTe Crystal
    半磁性半导体材料Cd_(1-x)MnxTe晶体生长
短句来源
    The Measurement Systum of The OPtical Bisterbility onⅡ一ⅥSemiconductor Material
    用于Ⅱ-Ⅵ族半导体材料光学双稳特性测试装置
短句来源
    The Measurement Systum of The Optical Bistability on Ⅱ—Ⅵ Semiconductor Material
    用于Ⅱ——Ⅵ族半导体材料光学双稳特性测试装置
短句来源
更多       
  半导体
    Beam Properties and Beam Combining Technique for Semiconductor Lasers
    半导体激光光束的特性及其耦合技术
短句来源
    Research of Semiconductor Laser Optical Coatings Technology
    半导体激光器光学膜技术研究
短句来源
    The Research about the Noise for the Reliability of High Power Semiconductor Laser and Bipolar Transistor
    噪声用于半导体大功率激光器及双极晶体管可靠性研究
短句来源
    The Study of Semiconductor Quantum-well Lasers Theory Model and Application in the Computer Simulation
    半导体量子阱激光器理论模型的研究及其在计算机模拟中的应用
短句来源
    Study on High Efficiency Coupling Properties for Semiconductor Laser Diodes to Optical Fibers
    半导体激光器与光纤高效耦合特性的研究
短句来源
更多       
  “semiconductor”译为未确定词的双语例句
    Transport in Semiconductor Superlattice and Phase Transition of BEC in Optical Lattice
    超晶格输运与光格子中BEC的量子相变
短句来源
    Tunable Wavelength Conversion Based on FWM in Semiconductor Fiber Ring Laser
    基于SFRL的FWM型可调谐全光波长转换器的研究
短句来源
    The Current-voltage Characteristics in Doped Mn Chalcogenide Glass Semiconductor As_(35)Te_(55)Si_(10)
    掺Mn的硫系玻璃半导体As_(35)Te_(55)Si_(10)的电流—电压特性
短句来源
    STUDY OF PHOTOLUMINESCENCE IN a-Si:H/a-SiN_x:H AMORPHOUS SEMICONDUCTOR SUPERLATTICES
    a-Si:H/a-SiN_x:H超晶格薄膜光致发光性质的研究
短句来源
    Analysis of Waveguide Characteristics for Visible GaAlAs Semiconductor Laser with Five Layers Large Optical Cavity
    五层结构大光腔可见光GaAlAs激光器波导特性分析
短句来源
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  semiconductor
CdS semiconductor nano-films were grown on ITO glass substrates by means of chemical bath deposition (CBD), with Cd(NO3)2 as Cd ion and (NH2)2CS as S ion sources.
      
The sensitive unit of the accelerometer is the metal-oxide semiconductor (MOS) ROs located on silicon beams.
      
The coupling ratio of the two MMI couplers deviates from 50:50 but the deviation is nearly the same, which is decided by good uniformity of semiconductor planar lightwave circuit (PLC) process.
      
An ultrasonic linear motor is proposed and fabricated by using the longitudinal and bending vibration double mode bolt-clamped Langevin type transducer to meet high power and speed requirements in the aerospace and semiconductor industries.
      
The electronic properties of SWCNTs can be modified by adsorbate atoms and metal-semiconductor and semiconductor-semi-conductor transitions can be achieved by the doping of alkali atoms.
      
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A new method for measuring the life time of minority current carriers in semiconductors is described. Measurements are made by observing the photoconductive decay of the spreading resistance under a point contact. This method possesses the following advantages: (1) It is not necessary to cut the specimen into special form. (2) No fixed electrode has to be made to the specimen. (3) It is applicable to test inhomo-geneous specimen. (4) No particular surface treatment is necessary. (5) Apparatus used is simple...

A new method for measuring the life time of minority current carriers in semiconductors is described. Measurements are made by observing the photoconductive decay of the spreading resistance under a point contact. This method possesses the following advantages: (1) It is not necessary to cut the specimen into special form. (2) No fixed electrode has to be made to the specimen. (3) It is applicable to test inhomo-geneous specimen. (4) No particular surface treatment is necessary. (5) Apparatus used is simple and easy to operate. (6) Enough accuracy is obtainable. A theoretical analysis is given of the effects of surface recombination velocity and of varying absorption depth of the light in specimen. Experimental details and discussions are given for Ge and Si specimens. Results are in agreement with those obtained by other methods.

本文提出了一种新的测量半导体材料中少数载流子寿命的方法。这方法是测量触针下分布电阻的光电导衰退。这方法具有下列优点:(1)样品不需要切成一定形状;(2)在样品上不需要做固定电极;(3)可以检验不均匀的材料;(4)不需要一定的表面处理;(5)仪器简单,操作方便;(6)有一定的准确度。文中对表面复合速度以及光线在样品中的吸收深度的影响进行了理论分析;同时对Ge和Si样品的实验数据进行了讨论。用这方法测得的寿命基本上与其他方法的结果符合。

In accordance with the bond formation of impurity atoms in semiconductors, a wave function of the local molecular type was admixed into the band function. We obtained an effective mass-equation with an additional term of the S function type. In the case of simple band structure, the influence of atomic character on the ionization energy, and the relation between the shallow and the deep levels were discussed. Further more, we analyzed the valley-orbit splitting caused by the existance of several equivalent...

In accordance with the bond formation of impurity atoms in semiconductors, a wave function of the local molecular type was admixed into the band function. We obtained an effective mass-equation with an additional term of the S function type. In the case of simple band structure, the influence of atomic character on the ionization energy, and the relation between the shallow and the deep levels were discussed. Further more, we analyzed the valley-orbit splitting caused by the existance of several equivalent minima of conduction band in Ge and Si. Because of the interaction between bonds, the variation of wave function of a shallow level is small, but the correction on the ionization energy may be appreciable. This is in agreement with the hyper-fine structure data of the electron spin resonance.

分析了杂质原子在半导体中的成键情况,我们在一般能带波函数中混入部分分子型局域波函数,从而得到带有修正项的有效质量方程。在简单能带结构情况下,我们讨论了电离能与原子性质的关系,及由浅能级向深能级的转化。进而分析了由于Ge、Si中导带各极值所产生的谷轨道分裂。对浅能级,由于键间相互作用,电离能可以有相对较大的修正,但波函数却变化很小,这与电子自旋共振超精细结构的实验结果一致。

The results presented in this paper may be classified into three categories. First, there is derived the characteristics of gain, bandwidth, and figure of merit of a non-degenerative parametric amplifier of both fundamental and sub-harmonic pumping; and the comparison between them is carried out in substantial detail. Second, there is devised an analytical method for determining the harmonic contents of the capacitance of a nonlinear semiconductor diode, which is negatively biased and is under the action...

The results presented in this paper may be classified into three categories. First, there is derived the characteristics of gain, bandwidth, and figure of merit of a non-degenerative parametric amplifier of both fundamental and sub-harmonic pumping; and the comparison between them is carried out in substantial detail. Second, there is devised an analytical method for determining the harmonic contents of the capacitance of a nonlinear semiconductor diode, which is negatively biased and is under the action of a strong high frequency pumping voltage. The magnitudes of bias and pumping voltage are thus found quantitatively. Also, the stability requirements for pumping amplitude and pumping frequency are discussed. Third, the noise figure of a parametric amplifier itself and the effective noise figure of the amplifier loaded with a noisy second stage, which may be a frequency converter, are derived. Factors such as diode loss, match, and the bandwidth ratio of the signal to the idler circuit are all considered in the derivations so as to make the results with greater importance for practical applications. Finally, a numerical example is given to show the utility of the results presented in this paper and to illustrate a possible design procedure of a non-degenerative parametric amplifier.

本文主要结果有三:第一,推导出基波激励和次谐波激励参量放大器的优值、功率增益、和通带等主要特性,并就这些特性对基波激励源的和次谐波激励源的参量放大器进行比较;第二,通过半导体二极管非线性电容的谐波分量的分析,在激励电压、偏压和放大器的特性间得出定量关系,并且对给定放大器特性求出激励源幅度和频率的稳定要求;第三,推导出放大器的有效噪声,并给出最低有效噪声的设计条件。 以上特性的探讨和二极管损耗、信号迴路和镜象迴路通带比、匹配等因子结合在一起进行,使所得结果更具有实际意义。最后举出一数字例子,说明应用本文结果来设计参量放大器的一种可能步骤。

 
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