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semiconductor
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  半导体
    The Design of Semiconductor Solid-State Light Sources Induced Fluorescence Detection for Flow Analysis System
    流动分析系统—半导体固体光源诱导荧光检测的研究
短句来源
    Preparation of Coupled Semiconductor Supported Metal Materials and Their Photocatalysis Behaviors for the Reaction of CO_2 with C_3H_6
    复合半导体负载金属材料的制备及其光催化CO_2和C_3H_6反应性能
短句来源
    APPLICATION OF ELECTROTHERMAL ATOMISATIONATOMIC ABSORPTION SPECTROMETRY FOR ANALYZING SEMICONDUCTOR MATERIALS
    电热原子化一原子吸收光谱分析在半导体材料中的应用
短句来源
    A STUDY ON EFFECTIVENESS OF REAGENTS "811" AND "812" FOR REMOVING SEMICONDUCTOR SURFACES CONTAMINANTS BY RADIOACTIVE TRACER TECHNIQUES
    放射性同位素示踪法研究清洗剂“811”和“812”对半导体表面杂质的清洗效果
短句来源
    A STUDY ON MECHANISM OF REMOVING SEMICONDUCTOR SURFACES CONTAMINANTS WITH NEW-TYPE CLEANING AGENTS "811" AND "812"
    新型清洗剂“811”、“812”清洗半导体表面杂质的机理
短句来源
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  半导体材料
    APPLICATION OF ELECTROTHERMAL ATOMISATIONATOMIC ABSORPTION SPECTROMETRY FOR ANALYZING SEMICONDUCTOR MATERIALS
    电热原子化一原子吸收光谱分析在半导体材料中的应用
短句来源
    A Review : Analysis of Semiconductor Materials
    半导体材料分析
短句来源
    Analysis of Semiconductor Materials
    半导体材料分析
短句来源
    RESEARCH HIGHLIGHT OF SEVERAL Ⅲ-Ⅴ SEMICONDUCTOR MATERICALS
    几种Ⅲ─Ⅴ族化合物半导体材料的研究热点
短句来源
    The study on the electronic properties of B2CN convinces that B2CN is not belong to semiconductor, and B2CN-III is a kind of new compound with hopping conductivity
    电子结构分析表明,B2CN不属于半导体材料,B2CN-III是一类具有跳越式导电性质的新化合物
短句来源
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  半导体
    The Design of Semiconductor Solid-State Light Sources Induced Fluorescence Detection for Flow Analysis System
    流动分析系统—半导体固体光源诱导荧光检测的研究
短句来源
    Preparation of Coupled Semiconductor Supported Metal Materials and Their Photocatalysis Behaviors for the Reaction of CO_2 with C_3H_6
    复合半导体负载金属材料的制备及其光催化CO_2和C_3H_6反应性能
短句来源
    APPLICATION OF ELECTROTHERMAL ATOMISATIONATOMIC ABSORPTION SPECTROMETRY FOR ANALYZING SEMICONDUCTOR MATERIALS
    电热原子化一原子吸收光谱分析在半导体材料中的应用
短句来源
    A STUDY ON EFFECTIVENESS OF REAGENTS "811" AND "812" FOR REMOVING SEMICONDUCTOR SURFACES CONTAMINANTS BY RADIOACTIVE TRACER TECHNIQUES
    放射性同位素示踪法研究清洗剂“811”和“812”对半导体表面杂质的清洗效果
短句来源
    A STUDY ON MECHANISM OF REMOVING SEMICONDUCTOR SURFACES CONTAMINANTS WITH NEW-TYPE CLEANING AGENTS "811" AND "812"
    新型清洗剂“811”、“812”清洗半导体表面杂质的机理
短句来源
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  “semiconductor”译为未确定词的双语例句
    Transport in Semiconductor Superlattice and Phase Transition of BEC in Optical Lattice
    超晶格输运与光格子中BEC的量子相变
短句来源
    Infrared Spectrometry Determination of Compasition of Polycrystal Compound Semiconductor Hg_(i-x)Cd_xSe
    利用红外光谱法测定Hg_(1-x)Cd_xSe的组分
短句来源
    THE EFFECTS OF TEMPERATURE AND ATMOSPHERE ON THE SEMICONDUCTOR CONDUCTIVITY OF M(Ⅱ)-α-Fe2O3GAS SENSING MATERIALS
    温度和气氛对M(Ⅱ)-α-Fe_2O_3电导和气体灵敏度的影响
短句来源
    THE STUDY OF THE THIKD ORDER OPTICAL NONLINEARITIES OF CdxHg1-xTe/SiO2 SEMICONDUCTOR SOLUTION-DOPED GLASSES
    Cd_xHg_(1-x)Te/SiO_2固溶体微晶掺杂玻璃三阶非线性光学性质的
短句来源
    Detection of Combustible Gases by Semiconductor Sensors──Rapid Separation of Hydrogen Sulphide with β,β'-oxydipropionitrile
    Detection of Combustible Gases by Semiconductor Sensors──Rapid Separation of Hydrogen Sulphide with β,β'-oxydipropionitrile
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  semiconductor
CdS semiconductor nano-films were grown on ITO glass substrates by means of chemical bath deposition (CBD), with Cd(NO3)2 as Cd ion and (NH2)2CS as S ion sources.
      
The sensitive unit of the accelerometer is the metal-oxide semiconductor (MOS) ROs located on silicon beams.
      
The coupling ratio of the two MMI couplers deviates from 50:50 but the deviation is nearly the same, which is decided by good uniformity of semiconductor planar lightwave circuit (PLC) process.
      
An ultrasonic linear motor is proposed and fabricated by using the longitudinal and bending vibration double mode bolt-clamped Langevin type transducer to meet high power and speed requirements in the aerospace and semiconductor industries.
      
The electronic properties of SWCNTs can be modified by adsorbate atoms and metal-semiconductor and semiconductor-semi-conductor transitions can be achieved by the doping of alkali atoms.
      
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The relations existing between the semiconductivity, the chemical structure and the physico-chemical properties of the corresponding compounds have been studied by many authors, and a number of empirical formulas for the calculation o?the energy gaps haye been proposed. In this paper the authors on basis of the periodic law suggest an empirical formula, from which one can calculate the energy gaps of intrinsic semiconductors with the ZnS-structure type in terms of the "Column number" (l) and the "row number"...

The relations existing between the semiconductivity, the chemical structure and the physico-chemical properties of the corresponding compounds have been studied by many authors, and a number of empirical formulas for the calculation o?the energy gaps haye been proposed. In this paper the authors on basis of the periodic law suggest an empirical formula, from which one can calculate the energy gaps of intrinsic semiconductors with the ZnS-structure type in terms of the "Column number" (l) and the "row number" (n) of the elements in the corresponding compounds. The calculations agree fairly well with the experimental data.

Pearson,Suchet,Manca等曾应用结构化学的参数讨论了本征半导体的禁带宽度的变化规律及其与物理化学性质的联系,这些研究工作都是很有意义的,在这些研究工作的启发下,本文作者试图以周期律为指导,探求具有ZnS结构类型的本征半导体化合物的禁带宽度变化的规律,并提出了一个依据化合物中元素在周期表中的位置计算其禁带宽度的经验公式,依此公式所得的计算值与实验值相当符合,但其物理意义则有待于深入探讨.

The photo-electrochemical properties of n-Type Polycrystalline TiO_2semiconductor electrodes are investigated. These samples are preparedby painting Ti(OC_4H_9)_4+C_4H_9OH solution, on Ti substrate with subse-quent heat-treatment in argor atomspher at 700℃ for one hour. X-ray diffraction data indicate that the investigated samples havethe rutile structure and point out that the Ti Substrate extra evidenteffect on the formation of the rutile structure. The dependence of the open circuit photopotential on...

The photo-electrochemical properties of n-Type Polycrystalline TiO_2semiconductor electrodes are investigated. These samples are preparedby painting Ti(OC_4H_9)_4+C_4H_9OH solution, on Ti substrate with subse-quent heat-treatment in argor atomspher at 700℃ for one hour. X-ray diffraction data indicate that the investigated samples havethe rutile structure and point out that the Ti Substrate extra evidenteffect on the formation of the rutile structure. The dependence of the open circuit photopotential on solution pHis measured. The slope is Δφ/ΔpH=-60mv. Cyclic voltammetric i--φ curves of these n--type TiO_2 electrodesare measured in different pH solutions with and without illumination.The result indicate that under illumination the decomposition potentialof water shifts move then 1.0v. in the negative direction.

研究了在Ti基片上,涂敷Ti(OC_4H_9)_4+C_4H_9OH溶液,在Ar气氛中,700℃处理一小时,所制得的n型多晶TiO_2半导体电极的光电化学性质。用X—射线分析Ti基片上的TiO_2,为金红石结构,并指出Ti基片对形成金红石型TiO_2结构,有明显的效应。试验测定了,开路时n型TiO_2电极光电位随溶液pH的变化,斜率为△φ/△pH?-60mV。并用周期电位扫描方法,研究了在光照及未光照条件下,n型TiO_2电极的i—φ曲线,结果指出水的光分介电压向负方向移动了1.0V以上。

This paper deals with thermoelectric refrigeration of semiconductors, from the principle of refrigeration to the technical procedures for preparing good materials, measurement of thermoelectric parameters, cooling experiments, etc. Some of intere sting experimental data are also given.Our main attention concerns with the figure of merit (Z =a2o/k)of Bi-Te-Se andBi-Te-Sb Solid solution systems.

本文讨论了半导体温差致冷的原理,材料的选择和制备,参数的测量以及致冷实验方面等都有叙述,并给出部分实验结果。讨论了Bi-Te-Se和Bi-Te-Sb系固溶体作为温差致冷材料的优值(Z=a~2(?)/k)。

 
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