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semiconductor
相关语句
  半导体
    The Inference and Application of the Theoretical Formula for the Average Thickness of Electrodeposit on Semiconductor Elements
    半导体器件电镀层平均厚度理论计算公式的推导验证与工艺应用
短句来源
    Development of Gold Plating Technique for Semiconductor Devices
    半导体器件镀金发展概况
短句来源
    NEW ELECTRONIC CERAMICS——SEMICONDUCTOR CERAMIC ZnO PIEZORESISTOR
    新的电子陶瓷—半导体陶瓷ZnO压敏电阻器
短句来源
    RESEARCH ON ETHANOL-SENSING CHARACTERISTICS AND MECHANISM OF SnO_2-BASED SEMICONDUCTOR CERAMICS
    SnO_2基半导体陶瓷的酒敏特性及机理探讨
短句来源
    The Quantum Size Effects of AgBr Semiconductor Ultrafine Particles
    超微半导体AgBr的量子尺寸效应
短句来源
更多       
  半导体材料
    For example, in the industries of atomic energy and semiconductor, the purity of argon, helium, silicon, and germanium is 99.99 %, some of them even exceeds 99. 9999%.
    例如,在原子能和半导体工业中所需的高纯气体氩、氦及半导体材料硅和锗等,其纯度都要求在99.99%,有些甚至超过99.9999%。
短句来源
    electrical conductivity of NiFe2O4 ceramic will advance with temperature increasing and the material exhibits the property of semiconductor;
    NiFe2O4陶瓷材料的导电性能随着温度升高而提高,且呈现半导体材料特性;
短句来源
    The boron-doped diamond, so-called Ⅱb type diamond, processes many wonderful properties such as oxidation-resistance, impact-resistance, stable chemical character and excellent semiconductor performance.
    含硼金刚石(即Ⅱb型金刚石)是一类特殊的金刚石,在抗氧化性、耐热性和化学惰性方面都优于普通金刚石。 尤其是电学性能方面,含硼金刚石具有优良的半导体性能,可以在更高温度和恶劣环境下正常工作,是一种有发展前途的高温、大功率半导体材料
短句来源
    Electronic ceramic material is an important field in material science, which is applied to semiconductor, piezoelectricity, dielectric material and insulation material.
    电子陶瓷材料是材料科学当中的重要领域,在半导体材料、压电材料、铁电材料、介电材料及绝缘材料等方面都具有广泛应用。
短句来源
    Nowadays, the application of inorganic microporous materials is not only confined to the fields of separation, and the catalisis, but also widely extended to non-linear optical materials, semiconductor materials, microeactors, information memorizer, photoelectric memorizer etc.
    无机微孔晶体在工业分离、吸附和催化,非线性光学材料、半导体材料、化学微反应器、信息存储与处理、能量存储及转换等主客体化学领域具有重要的应用。 具有新颖结构的微孔化合物的设计、合成以及合成路线与方法的开拓一直是人们关注的问题。
短句来源
更多       
  半导体
    The Inference and Application of the Theoretical Formula for the Average Thickness of Electrodeposit on Semiconductor Elements
    半导体器件电镀层平均厚度理论计算公式的推导验证与工艺应用
短句来源
    Development of Gold Plating Technique for Semiconductor Devices
    半导体器件镀金发展概况
短句来源
    NEW ELECTRONIC CERAMICS——SEMICONDUCTOR CERAMIC ZnO PIEZORESISTOR
    新的电子陶瓷—半导体陶瓷ZnO压敏电阻器
短句来源
    RESEARCH ON ETHANOL-SENSING CHARACTERISTICS AND MECHANISM OF SnO_2-BASED SEMICONDUCTOR CERAMICS
    SnO_2基半导体陶瓷的酒敏特性及机理探讨
短句来源
    The Quantum Size Effects of AgBr Semiconductor Ultrafine Particles
    超微半导体AgBr的量子尺寸效应
短句来源
更多       
  “semiconductor”译为未确定词的双语例句
    THE EFFECTS OF TEMPERATURE AND ATMOSPHERE ON THE SEMICONDUCTOR CONDUCTIVITY OF M(Ⅱ)-α-Fe2O3GAS SENSING MATERIALS
    温度和气氛对M(Ⅱ)-α-Fe_2O_3电导和气体灵敏度的影响
短句来源
    The electric fatigue of (BaPb)TiO_3-base semiconductor ferroelectric ceramics were studies in present
    对(BaPb)TiO_3型PTCR铁电陶瓷的电疲劳现象进行了研究。
    The Enhanced Photo-Catalytic Behavior of Sb2O3/TiO2 Semiconductor Nanopowder
    纳米复合Sb_2O_3/TiO_2的光催化性能研究
短句来源
    PROPERTIES OF Ge-As-S CHALCOGENIDE AMORPHOUS SEMICONDUCTOR
    硫系Ge-As-S玻璃和薄膜的特性
短句来源
    Quality Specifications.Market and Production Technology of Semiconductor Hydrogen Peroxide
    电子级过氧化氢的质量标准、市场和生产技术
短句来源
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  semiconductor
CdS semiconductor nano-films were grown on ITO glass substrates by means of chemical bath deposition (CBD), with Cd(NO3)2 as Cd ion and (NH2)2CS as S ion sources.
      
The sensitive unit of the accelerometer is the metal-oxide semiconductor (MOS) ROs located on silicon beams.
      
The coupling ratio of the two MMI couplers deviates from 50:50 but the deviation is nearly the same, which is decided by good uniformity of semiconductor planar lightwave circuit (PLC) process.
      
An ultrasonic linear motor is proposed and fabricated by using the longitudinal and bending vibration double mode bolt-clamped Langevin type transducer to meet high power and speed requirements in the aerospace and semiconductor industries.
      
The electronic properties of SWCNTs can be modified by adsorbate atoms and metal-semiconductor and semiconductor-semi-conductor transitions can be achieved by the doping of alkali atoms.
      
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In order to extend the industrial application of the semiconductor air condi- tioner to thooe fields where ventilation problems were to be alleviated, such as sweltering control cabins in metallurgical plants and on traveling machines for outdoor activities in subtropical areas, an analogous test of a thermoelectric air cooling equipment with hot air input controlled below 50 degrees centigrade, was conducted on the basis of the previous studies of "air cooling" parameters. A quan- titative relationship...

In order to extend the industrial application of the semiconductor air condi- tioner to thooe fields where ventilation problems were to be alleviated, such as sweltering control cabins in metallurgical plants and on traveling machines for outdoor activities in subtropical areas, an analogous test of a thermoelectric air cooling equipment with hot air input controlled below 50 degrees centigrade, was conducted on the basis of the previous studies of "air cooling" parameters. A quan- titative relationship between the temperature of the input air on both heat and cold sides and the refrigeration amount is deduced in this paper. Mathematical eva- luation shows that as the temperature of the intake draft rises, the cooling effect is not diminished and quite the contrary, it gets a little higher. This theoretical statement has been proved by experiments. The temperature difference generated by the cooling effect was not less than 14 degrees centigrade while the working current being maintained at 30 amperes.

为将风冷式半导体空调扩大应用于亚热带露天作业的大型移动机械的司机室和冶金高温车间的操纵室,在过去“风冷式”诸参数研究的基础上,又用低于50℃的热空气进行了模拟实验与研究。本文从理论上推导出热端与冷端进口空气温度与致冷量之间的关系式,说明随进口气温的升高,致冷效果不但不降低,反而略有提高,这已由实验证实。在工作电流30安时,致冷温差不低于14℃。

Recently, the investigation of electron transport in disordered system has graduallydeveloped, especially that of gap states is of particular interest.Glassy chalcogenide semi-conductors have great variety of band gaps.Several correlations of glass transition tempe-rature and band gaps have been proposed. Although not very successful when extendedbeyond a single narrow family of materials, these correlations give us an idea to producematerial with desired band gap.Glassy Ge_(32)Se_(32)Te_(32)As_4 film has been...

Recently, the investigation of electron transport in disordered system has graduallydeveloped, especially that of gap states is of particular interest.Glassy chalcogenide semi-conductors have great variety of band gaps.Several correlations of glass transition tempe-rature and band gaps have been proposed. Although not very successful when extendedbeyond a single narrow family of materials, these correlations give us an idea to producematerial with desired band gap.Glassy Ge_(32)Se_(32)Te_(32)As_4 film has been chemically modifiedto shift the Fermi level.Modifiers bond to the structure in a strong covalent manner. Thechemical nature of glass constituents, however, would influence the incorporation ofmodifiers.This paper presents a systematic investigation of the optical and electrical pro-perties of Ge-Se-Te system glasses in order to find out the relationship between glass con-stituents and band gaps for further study of chemical modification. DSC was used to measure Tg.Wave length corresponding to one half of the maximumtransmission was taken to calculate the opitcal gaps.The experimental results showed thatwidth of gaps of Ge_(32)Se_(24+x)Te_(40-x)As_4(x=0,8,16,24,32)glasses varied with the variation of Se-Teratio in the glass composition. From the role of connectedness in the relationship betweenoptical gap and glass transition temperature for amorphous semiconductors we could estima-te the width of gap of amorphous chalcogenide semiconductor with designed composition,or we could design an amorphous chalcogenide composition having the desired band gap.

近来科技工作者们对非晶半导体的能带状态和电子传输过程的研究发生了很大的兴趣。硫系玻璃半导体中的带隙宽度范围较大,在很多的工作中已经提出了几种玻璃转变温度和带隙宽段之间的关系,虽然这些关系有一定的局限性,但是这种规律性已可为设计各种不同的光隙材料提供参考。 玻璃态Ge_(32)Se_(32)Te_(32)As_4经过化学改良已使费米能级移动,改良元素以共价键方式与基体结合,但是基体组份的化学性质将会影响改良元素与基体的结合,从而影响改良效果。 本工作系统地研究了Ge-Se-Te玻璃的光、电性质,探讨玻璃组份与光隙的关系,为进一步研究化学的改良提供适宜的基体。 玻璃转变温度是用DSC仪来测定的。取最大透过率的一半所对应的波长以电子伏特表示作为光能隙。实验结果表明Ge_(32)Se_(24+x)Te_(40-x)As_4(x=0,8,16,24,32)玻璃是随着玻璃组成中Se-Te比例变化而变化的。同时也指明了一系列玻璃中光能隙、玻璃转变温度和原子连接度之间有一定的关系,符合于C-T_g-E_((04))的关系模型。我们可以根据这些规律性,来估计所设计玻璃半导体能隙宽度或者也可按这些规律性来设计我们所需要能隙的玻璃...

近来科技工作者们对非晶半导体的能带状态和电子传输过程的研究发生了很大的兴趣。硫系玻璃半导体中的带隙宽度范围较大,在很多的工作中已经提出了几种玻璃转变温度和带隙宽段之间的关系,虽然这些关系有一定的局限性,但是这种规律性已可为设计各种不同的光隙材料提供参考。 玻璃态Ge_(32)Se_(32)Te_(32)As_4经过化学改良已使费米能级移动,改良元素以共价键方式与基体结合,但是基体组份的化学性质将会影响改良元素与基体的结合,从而影响改良效果。 本工作系统地研究了Ge-Se-Te玻璃的光、电性质,探讨玻璃组份与光隙的关系,为进一步研究化学的改良提供适宜的基体。 玻璃转变温度是用DSC仪来测定的。取最大透过率的一半所对应的波长以电子伏特表示作为光能隙。实验结果表明Ge_(32)Se_(24+x)Te_(40-x)As_4(x=0,8,16,24,32)玻璃是随着玻璃组成中Se-Te比例变化而变化的。同时也指明了一系列玻璃中光能隙、玻璃转变温度和原子连接度之间有一定的关系,符合于C-T_g-E_((04))的关系模型。我们可以根据这些规律性,来估计所设计玻璃半导体能隙宽度或者也可按这些规律性来设计我们所需要能隙的玻璃成分。

This paper describes a series of glasses colored by lead compounds of S, Se, Te.Theseglasse can absorb the entire visible spectrum and show steep rise in transmission atwave lengths of 0.7~2.5μm in the near infrared region. It is observed that the forbidden band gaps of some semiconductors in glass are closeto those of corresponding crystals, and the location of frontage absorption of glass isdetermined by the energy required for the transition of electrons from valence band toconduction band. Glasses...

This paper describes a series of glasses colored by lead compounds of S, Se, Te.Theseglasse can absorb the entire visible spectrum and show steep rise in transmission atwave lengths of 0.7~2.5μm in the near infrared region. It is observed that the forbidden band gaps of some semiconductors in glass are closeto those of corresponding crystals, and the location of frontage absorption of glass isdetermined by the energy required for the transition of electrons from valence band toconduction band. Glasses with steep frontage at various wave lengthes in the near infraredregion are obtained by introducing PbX semiconductors into the glasses. During the process of heat treatment,the lead and cadmium chalcogenides in the glassform continuous solid solutions of which the forbidden band gaps are determined by com-positions of the aggregations just as in mixed crystals.

本文叙述了用铅的硫、硒、碲化合物着色的玻璃系列。该类玻璃能吸收全部可见光,对于在0.7~2.5μm的近红外区域的各种波长具有陡峭上升的透过性能。 我们观察到若干半导体在玻璃中的禁带宽度很接近于晶体的禁带宽度,玻璃的前截止吸收位置决定于电子从价带跃迁到导带所需的能量。我们通过把PbX半导体引入玻璃作出了在近红外区不同波长处具有陡峭前截止边缘的玻璃。 在热处理过程中,玻璃中铅和镉的硫、硒、碲化合物将形成连续固溶体,其禁带宽度决定于聚集物的各种组成,正象在混合晶体中一样。

 
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