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semiconductor
相关语句
  半导体
    Studies on the Luminescence Properties of Organic Semiconductor LPPP and Related Problems
    有机半导体LPPP发光性质及相关问题研究
短句来源
    Synthesis, Property and Mechanism of SiC and GaN Semiconductor Nanomaterials and Their Array
    SiC、GaN半导体纳米材料及阵列的合成、性能与机理研究
短句来源
    Growth of VA-VIA Group Compound Semiconductor Thermoelectric Nanofilms Via the Route of Electrochemical Atomic Layer Epitaxy
    VA-VIA族化合物半导体纳米热电薄膜的电化学原子层外延生长
短句来源
    Preparation and Characterization of Low Dimensional Semiconductor Nanomaterials (VIa Group)
    低维(VIa族化合物)半导体纳米材料的制备及表征
短句来源
    New Methods for Synthesis and Application of Semiconductor Nanoparticles and Development of Microfluidic Chip Flow Cytometer
    半导体纳米粒子合成与应用新方法以及微流控芯片流式细胞仪的研究
短句来源
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  半导体材料
    Ⅲ-Ⅴ ANTIMONIDE COMPOUND SEMICONDUCTOR MATERIALS
    Ⅲ-V 族锑化物半导体材料
短句来源
    Study of the Ⅱ一Ⅵ Semiconductor Nanocrystals(Ⅱ)Synthesis and Decomposition of P一Methoxybeneze n Selenocadmium
    Ⅱ-Ⅵ族纳米级半导体材料制备研究-(Ⅱ)对甲氧基苯基硒化镉的合成及热分解反应
短句来源
    Study on the Development of ZnS Semiconductor Nanoparticles
    Ⅱ-Ⅵ族半导体材料ZnS纳米粒子研究进展
短句来源
    VIa group compounds (CdSe, ZnSe and CdS) or simple substance of the element (Te and Se) are both the important semiconductor materials which can be used extensively in the fields of nonlinear optics, photoelectric conversion, photoabsorption and photocatalysis.
    VIa族化合物(如CdSe、ZnSe、CdS等)或者单质(如Te、Se等)都是非常重要的半导体材料,它们在光吸收、光电转换、非线性光学、光催化等方面都有着广泛的应用。
短句来源
    For calcium cobalt oxide(Ca3Co2O6) which is a P-type semiconductor, the thermoelectric properties is as good as other Co-based oxide thermoelectric materials.
    Ca_3Co_2O_6是一个P型半导体材料,它的热电性能和Co的其它的氧化物热电材料性能不相上下。
短句来源
更多       
  半导体
    Studies on the Luminescence Properties of Organic Semiconductor LPPP and Related Problems
    有机半导体LPPP发光性质及相关问题研究
短句来源
    Synthesis, Property and Mechanism of SiC and GaN Semiconductor Nanomaterials and Their Array
    SiC、GaN半导体纳米材料及阵列的合成、性能与机理研究
短句来源
    Growth of VA-VIA Group Compound Semiconductor Thermoelectric Nanofilms Via the Route of Electrochemical Atomic Layer Epitaxy
    VA-VIA族化合物半导体纳米热电薄膜的电化学原子层外延生长
短句来源
    Preparation and Characterization of Low Dimensional Semiconductor Nanomaterials (VIa Group)
    低维(VIa族化合物)半导体纳米材料的制备及表征
短句来源
    New Methods for Synthesis and Application of Semiconductor Nanoparticles and Development of Microfluidic Chip Flow Cytometer
    半导体纳米粒子合成与应用新方法以及微流控芯片流式细胞仪的研究
短句来源
更多       
  “semiconductor”译为未确定词的双语例句
    The Solution Synthesis, Microstructure Characterization and Mechanism Studies of Low Dimensional II-VI、III-V Semiconductor Nanocrystals
    低维II-VI、III-V族纳米材料的液相合成、微结构表征与机理研究
短句来源
    Vapor Phase Passivation of Semiconductor Device with HF-HNO_3-CH_3SiCl_3
    用HF-HNO_3-CH_3SiCl_3气相钝化芯片
短句来源
    Preparation and Properties of a Novel Gas-sensing Semiconductor Cd_2Nb_2O_7
    新型气敏材料Cd_2Nb_2O_7的制备和性能研究
短句来源
    Studies on Principle of Room Temperature Resistivity of Polyethylene/Polyacenic Semiconductor Composites
    聚乙烯/聚并苯复合材料室温电阻率变化规律研究
短句来源
    The maximal dimensionless thermoelectric figure of merit of 0.13 at 600癈 has been obtained for the manganese doped FeSi2-based semiconductor, and a large power factor of 465 uW-m"'^1 for the aluminium doped FeSii-based materials has been measured in the present work.
    本项研究制备的Mn掺杂FeSi_2基热电材料最大无量纲热电优值达到0.13(600℃),Al掺杂FeSi_2基热电材料最大电功率因子达到465μW·m~(-1)K~(-1)(500℃)。
短句来源
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  semiconductor
CdS semiconductor nano-films were grown on ITO glass substrates by means of chemical bath deposition (CBD), with Cd(NO3)2 as Cd ion and (NH2)2CS as S ion sources.
      
The sensitive unit of the accelerometer is the metal-oxide semiconductor (MOS) ROs located on silicon beams.
      
The coupling ratio of the two MMI couplers deviates from 50:50 but the deviation is nearly the same, which is decided by good uniformity of semiconductor planar lightwave circuit (PLC) process.
      
An ultrasonic linear motor is proposed and fabricated by using the longitudinal and bending vibration double mode bolt-clamped Langevin type transducer to meet high power and speed requirements in the aerospace and semiconductor industries.
      
The electronic properties of SWCNTs can be modified by adsorbate atoms and metal-semiconductor and semiconductor-semi-conductor transitions can be achieved by the doping of alkali atoms.
      
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Polypyrrole films doped with BF4-, HS04- and CL04- were prepared by electrochemical method. Electrical conductivities of these samples and their temperature dependences were measured by four-probe method and VSC (voltage shorted compaction) method respectively. Experimental results indicate that the apparent temperature dependence of the conductivity as obtainted by the usual four-probe method, exhibits the character of typieal semiconductor, this feature is due to the contact resistance in the interblock...

Polypyrrole films doped with BF4-, HS04- and CL04- were prepared by electrochemical method. Electrical conductivities of these samples and their temperature dependences were measured by four-probe method and VSC (voltage shorted compaction) method respectively. Experimental results indicate that the apparent temperature dependence of the conductivity as obtainted by the usual four-probe method, exhibits the character of typieal semiconductor, this feature is due to the contact resistance in the interblock or intergranular regions of the film. The measurement cannot reflect the true conductivity intrinsic to the doped polypyrrole film. However, the method devi-ced to short circuit the intergranular contact resistance does actually show the metallic temperature dependence of the conductivity of doped polypyrrole film, its conductivity increases with decreasing temperatures.

用电化学方法制备了以BF_4~-,HSO_4~-和ClO_4~-掺杂的聚吡咯薄膜,其电导率和电导率的温度依赖性分别用标准四探针法和电压端短路法VSC(Voltage Shorted compaction)测试。实验结果表明:由标准四探针法所得到的电导率的温度依赖性呈现典型的半导体特性。由于掺杂聚吡咯薄膜的形态是块状物的堆砌,四探针法所得电导率及其温度依赖性由块与块之间的接触电阻所限制,并不反映掺杂聚吡咯的本征电导性。用VSC法消除了块状物之间的接触电阻后,即可得到掺杂聚吡咯薄膜的电导率的温度依赖性本质,电导率随温度下降而增大,表现出金属性电导。BF_4~-掺杂的聚吡咯薄膜经电化学法还原使其电导率在σ_(RT)=6—9(Ω·cm)~(-1)时,其电导率的温度依赖性在100K附近出现了金属-半导体转变。红外光谱说明在电化学还原过程中聚吡咯分子链有结构变化。

The present paper is about the thin film SnO_2 which is manufuctured by evaporation method. The thickness of the sample is 5000(?), the carrier concentration measured by Hall effect is 4.99×10~(20) cm~(-3), the Hall mobility is 4.26 cm~2 V~(-1)S~(-1), the conductivety is 340.6 Ω~(-1)cm~(-1), the conductivity pattern is of n-type and the light transmissivity T (λ=0.589μm) is 85%. The carrier concentration is determined as the main factor for controlling conductivety properties. This film can be used as the transparent...

The present paper is about the thin film SnO_2 which is manufuctured by evaporation method. The thickness of the sample is 5000(?), the carrier concentration measured by Hall effect is 4.99×10~(20) cm~(-3), the Hall mobility is 4.26 cm~2 V~(-1)S~(-1), the conductivety is 340.6 Ω~(-1)cm~(-1), the conductivity pattern is of n-type and the light transmissivity T (λ=0.589μm) is 85%. The carrier concentration is determined as the main factor for controlling conductivety properties. This film can be used as the transparent conducting electrode in television technique, and can be used to manufucture heterojunction solar battery with other semiconductor materials.

本文对用气态蒸发法制备的S_nO_2薄膜进行了基本物理特性的研究。试样薄膜的厚度为5000,利用霍耳效应测定其载流子浓度为4.99×10~(20)cm~(-3),霍耳迁移率为4.26cm~2V~(-1)S~(-1),导电类型为n型,用二探针法测定其电阻率为2.9×10~(-3)Ω·cm.光学测定其透过率T(λ=0.589μm)可达85%以上。由基本特性判定出支配S_nO_2薄膜电导特性的主要因素是载流子浓度,同时说明它可以用作电视技术中的透明电极材料,也可与其它半导体材料形成异质结制作太阳能电池。

In this paper the development of sensor materials including semicomductor, semiconductor ceramics, magnetic materials, organic materials, and biochemistry materials etc have been introduced.

本文介绍了敏感器件材料的发展情况,其中包括半导体材料、半导体陶瓷材料、有机材料、生化材料及超导材料等敏感器件材料。

 
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