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semiconductor
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  半导体
    Influence of GaAs, Ga3+ and Ge4+in Waste Water from Semiconductor Material Production on DNA or RNA and Amine Acids in Activated sludge.
    半导体材料生产废水中的GaAs、Ga~(3+)和Ge~(4+)对活性污泥核酸和氨基酸的影响
短句来源
    On the Photo-catalytic Degradation of PVA by Semiconductor Compound System
    半导体复合体系光催化降解PVA研究
短句来源
    Study on the Index System and Assessment Method of Industrial Eco-engineering in Emei Semiconductor Material Factory
    峨嵋半导体材料厂企业生态工程评价指标体系及评价方法研究
短句来源
    Study on the Photo-catalytic Degradation of Surfactant and the Print-dyeing Wastewater by Semiconductor Compound System
    半导体复合体系对表面活性剂及印染废水的光催化降解研究
短句来源
    Study on the Photo-catalytic Degradation of Water-soluble Dyes by Semiconductor Compound System
    半导体复合体系光催化降解水溶性染料研究
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  半导体
    Influence of GaAs, Ga3+ and Ge4+in Waste Water from Semiconductor Material Production on DNA or RNA and Amine Acids in Activated sludge.
    半导体材料生产废水中的GaAs、Ga~(3+)和Ge~(4+)对活性污泥核酸和氨基酸的影响
短句来源
    On the Photo-catalytic Degradation of PVA by Semiconductor Compound System
    半导体复合体系光催化降解PVA研究
短句来源
    Study on the Index System and Assessment Method of Industrial Eco-engineering in Emei Semiconductor Material Factory
    峨嵋半导体材料厂企业生态工程评价指标体系及评价方法研究
短句来源
    Study on the Photo-catalytic Degradation of Surfactant and the Print-dyeing Wastewater by Semiconductor Compound System
    半导体复合体系对表面活性剂及印染废水的光催化降解研究
短句来源
    Study on the Photo-catalytic Degradation of Water-soluble Dyes by Semiconductor Compound System
    半导体复合体系光催化降解水溶性染料研究
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  “semiconductor”译为未确定词的双语例句
    Photocatalytic Purification of Pulping Wastewater on Semiconductor TiO_2 Prepared by Sol-Gel
    溶胶-凝胶法制备的TiO_2对制浆黑液光催化降解的研究
短句来源
    Influencing Factors of Photocatalytic Degradation of Pulping Wastewater on Nanocrystal Semiconductor TiO_2
    纳米晶TiO_2光催化降解制浆黑液的影响因素
短句来源
    Caparative Study on Photocatalytic Degradation of Pulping Wastewater on Nanocrystal Semiconductor TiO_2 Prepared by Sol-Gel and Commercial TiO_2
    纳米晶TiO_2与市售TiO_2光催化降解制浆废水的性能比较
短句来源
    PHOTOCATALYTIC DEGRADATION OF METHYL ORANGE WITH METAL-IONS-DOPED TiO_2/ZnO SEMICONDUCTOR
    掺金属离子TiO_2/ZnO催化剂光降解甲基橙的研究
短句来源
    From the repeated experiments, we concluded that activities of samples prepared by Sol-Gel method are better than those of co-precipitation method and the optimal conditions to prepare TiO2-SnO2 compound semiconductor by Sol-Gel method:Use SnCl2·2H2O as the predecessor of Sn; The level of HCl is 5.28mL; n(Sn):n(Ti)=0.06;
    在溶胶-凝胶工艺中最佳的制备条件是:以SnCl2·2H2O为引入Sn的前驱体,水解抑制剂HCl的 用量为5.28mL,n(Sn):n(Ti)=0.06,溶胶陈化时间为132h,直接将干凝胶在300℃下焙烧2h。
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  semiconductor
CdS semiconductor nano-films were grown on ITO glass substrates by means of chemical bath deposition (CBD), with Cd(NO3)2 as Cd ion and (NH2)2CS as S ion sources.
      
The sensitive unit of the accelerometer is the metal-oxide semiconductor (MOS) ROs located on silicon beams.
      
The coupling ratio of the two MMI couplers deviates from 50:50 but the deviation is nearly the same, which is decided by good uniformity of semiconductor planar lightwave circuit (PLC) process.
      
An ultrasonic linear motor is proposed and fabricated by using the longitudinal and bending vibration double mode bolt-clamped Langevin type transducer to meet high power and speed requirements in the aerospace and semiconductor industries.
      
The electronic properties of SWCNTs can be modified by adsorbate atoms and metal-semiconductor and semiconductor-semi-conductor transitions can be achieved by the doping of alkali atoms.
      
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This paper describes the chemical photolytic rate of benzo (a) pyrene in distilled water, lake water, sea water under irradiation by sunlight or UV light and factors influencing the rate. The factors influencing the rate examined were water quality, the presence of particulates, such as coal slag, clay and semiconductor TiO2, irradiance and dissolved oxygen. The UV adsorption spectrogram aud fluorescence spectrogram for benzo (a) pyrene before and after its photolytic degradation are shown.

本文介绍了蒸馏水、湖水、海水中BaP在阳光照射下的光化学降解速度及水质、煤渣、粘土矿物和TiO_2等颗粒物的存在和照度、氧浓度对降解速度的影响。并给出了降解前后BaP的紫外吸收光谱图和荧光光谱图。

The aim of this work is to explore application of the catalytic wet oxidation process to wastewater treatment in the coke-oven plants and the coal-gas producers. A series of catalysts, noble metals/semiconductor oxides, were prepared and tested in a high pressure vessel under 250℃ liquid phase conditions. It was found that different catalysts demonstrated their own selectivity to different pollutants. The catalyst WT-501 showed high activity toward both ammonia anf organic components. Wastewater from the...

The aim of this work is to explore application of the catalytic wet oxidation process to wastewater treatment in the coke-oven plants and the coal-gas producers. A series of catalysts, noble metals/semiconductor oxides, were prepared and tested in a high pressure vessel under 250℃ liquid phase conditions. It was found that different catalysts demonstrated their own selectivity to different pollutants. The catalyst WT-501 showed high activity toward both ammonia anf organic components. Wastewater from the coke-oven plants originally contained COD 9302 mg/L and NH3 5230 mg/L, but they were removed into 619 mg/L and 47 mg/L respectively by using the catalyst WT-501 with COD removing rate of 93.2% and NH3 of 99%.

采用系列贵金属-半导体氧化物催化剂,在高压釜中250℃液相条件下对焦化厂等工业废水以及由氨、吡啶等组成的模拟废水进行液相氧化试验。结果发现几种催化剂对不同污染物有不同序列的催化氧化活性,其净化作用有各自的选择性。WT-501催化剂对氨和有机污染物均有高活性,焦化废水经WT-501催化氧化处理后’COD、NH_3分別从9302mg/L和5230mg/L降至619mg/L和47mg/L,去除率高达93.2%和99%。

The effects of GaAs, Ga3+ and Ge4+ in wastewater from semiconductor material production on the activities of dehydrogenases of activated sludge (MLSS of 2000 mg/L) were studied. The concentrations for 10% inhibition were 0.13, 45, 371 and 63 ppm/g MLSS for Hg2+, GaAs, Ga3+ and Ge4+, respectively. The 50% inhibition produced by Hg2+ at 2.7 ppm/gMLSS,25% by GaAs at 170ppm/gMLSS and Ge4+ at 228ppm/gMLSS. No competitive effects was found for the four inhibitors. The inhibition constants(Ki) of Hg2+, GaAs,...

The effects of GaAs, Ga3+ and Ge4+ in wastewater from semiconductor material production on the activities of dehydrogenases of activated sludge (MLSS of 2000 mg/L) were studied. The concentrations for 10% inhibition were 0.13, 45, 371 and 63 ppm/g MLSS for Hg2+, GaAs, Ga3+ and Ge4+, respectively. The 50% inhibition produced by Hg2+ at 2.7 ppm/gMLSS,25% by GaAs at 170ppm/gMLSS and Ge4+ at 228ppm/gMLSS. No competitive effects was found for the four inhibitors. The inhibition constants(Ki) of Hg2+, GaAs, Ga3+ and Ge4+ were 5.49×10-3 mmo1(1.25ppm/gMLSS), 1.30 mmol (180ppm/gMLSS), 7.05 mmol (700ppm/gMLSS) and 6.12mmol (250 ppm/gMLSS), respectively.

以活性污泥脱氢酶的活性作为毒性指标,研究了半导体材料GaAs、Ga~(3+)、Ge~(4+)对活性污泥活性的抑制影响,并用Hg~(2+)作为参比材料;同时对抑制动力学也作了初步研究。实验表明,GaAs、Ga~(3+)、Ge~(4+)及Hg~(2+)的10%抑制浓度分别为45.00,371.63,0.13ppm/gMLSS,GaAs、Ga~(3+)、Ge~(4+)和Hg~(2+)在浓度分别为180,700,250和1.25ppm/g MLSS时的抑制常数分别为1.30×10~(-3),7.05×10~(-3),6.12×10~(-3)和5.49×10~(-3)mmol,且其抑制类型均属可逆非竞争性抑制。

 
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