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semiconductor
相关语句
  半导体
    A Liquid Junction Photoelectrochemical Cell with N-Type Semiconductor CdS_(1-x) Se_x
    n型半导体CdS_(1-x)Se_x液结光电池
短句来源
    DEVELOPMENT OF THE POTASSUM ION SENSITIVE SEMICONDUCTOR DEVICE
    钾离子敏感半导体器件的研制
短句来源
    THEORETICAL ANALYSIS ON THE PHOTOELECTRIC CONVERSION OF POLYMER SEMICONDUCTOR
    聚合物半导体光电转换的理论分析
短句来源
    SEMICONDUCTOR SEPTUM ELECTROCHEMICAL PHOTOCELLS——Ⅳ. HYDROGEN MANUFACTURE OF WATER PHOTOELECTROLYSIS BY A STAR CELL
    半导体隔片电化学光电池——Ⅳ.星型池光解水制氢
短句来源
    SEMICONDUCTOR SEPTUM ELECTROCHEMICAL PHOTOCELLS ——Ⅴ. DIVERSIFIED SC-SEPs AND THIN SEMICONDUCTOR-METAL SEPTUMS
    半导体隔片电化学光电池——Ⅴ.各种薄片制备和不同类型SC-SEPs
短句来源
更多       
  半导体
    A Liquid Junction Photoelectrochemical Cell with N-Type Semiconductor CdS_(1-x) Se_x
    n型半导体CdS_(1-x)Se_x液结光电池
短句来源
    DEVELOPMENT OF THE POTASSUM ION SENSITIVE SEMICONDUCTOR DEVICE
    钾离子敏感半导体器件的研制
短句来源
    THEORETICAL ANALYSIS ON THE PHOTOELECTRIC CONVERSION OF POLYMER SEMICONDUCTOR
    聚合物半导体光电转换的理论分析
短句来源
    SEMICONDUCTOR SEPTUM ELECTROCHEMICAL PHOTOCELLS——Ⅳ. HYDROGEN MANUFACTURE OF WATER PHOTOELECTROLYSIS BY A STAR CELL
    半导体隔片电化学光电池——Ⅳ.星型池光解水制氢
短句来源
    SEMICONDUCTOR SEPTUM ELECTROCHEMICAL PHOTOCELLS ——Ⅴ. DIVERSIFIED SC-SEPs AND THIN SEMICONDUCTOR-METAL SEPTUMS
    半导体隔片电化学光电池——Ⅴ.各种薄片制备和不同类型SC-SEPs
短句来源
更多       
  “semiconductor”译为未确定词的双语例句
    Preparation of n-TiO_2 Semiconductor Photoanode and Study of Its Photoelectrochemical Behavior
    n—TiO_2光阳极的制备及其光电转换研究
短句来源
    Preparation of Polycrystalline n-type Semiconductor n-CdSe_xTe_(1-x)Photoelectrode and a Study of Its Photoelectrochemical Behaviour
    多晶n—CdSe_xTe_(1-x)光电极的制备及其光电化学行为的研究
短句来源
    PHOTOCATALYSIS OF DOPANT SANDWICH SEMICONDUCTOR (SES) PHOTOELETRODE-Ⅰ.THE PHOTOELECTRIC CHARACTERS OF THE ELECTRODE AND ITS ABILITY TO DECOMPOSE H_2O
    掺杂型夹层光电极的光催化作用 Ⅰ.电极特性及其光解H_2O能力初探
短句来源
    3-Times Extinction of Direct Lightning Stroke Accident on the Microwave Tower of Huangshi Electric Utility by Semiconductor Lightning Eliminator
    黄石供电局调度所微波站消雷器3次成功消灭直击雷事故
短句来源
    Study on Porous Polyacenic Semiconductor Electrode Kinetics
    多并苯电极过程动力学的研究
短句来源
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  semiconductor
CdS semiconductor nano-films were grown on ITO glass substrates by means of chemical bath deposition (CBD), with Cd(NO3)2 as Cd ion and (NH2)2CS as S ion sources.
      
The sensitive unit of the accelerometer is the metal-oxide semiconductor (MOS) ROs located on silicon beams.
      
The coupling ratio of the two MMI couplers deviates from 50:50 but the deviation is nearly the same, which is decided by good uniformity of semiconductor planar lightwave circuit (PLC) process.
      
An ultrasonic linear motor is proposed and fabricated by using the longitudinal and bending vibration double mode bolt-clamped Langevin type transducer to meet high power and speed requirements in the aerospace and semiconductor industries.
      
The electronic properties of SWCNTs can be modified by adsorbate atoms and metal-semiconductor and semiconductor-semi-conductor transitions can be achieved by the doping of alkali atoms.
      
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This paper ivestigates some problems of the interface between the P-N junction surface of high voltage Si semiconductor devices and the surface of protection dielectric. The authors have analyzed the reverse leakage current charaeteristies depending upon the voltage and presented the passivation coefficients B_(ID), B_K, which are used to quantitatively discuss the surface passivation effect and to distinguish the behavior of protection dielectrics. Using these two parameters, the authors have studied...

This paper ivestigates some problems of the interface between the P-N junction surface of high voltage Si semiconductor devices and the surface of protection dielectric. The authors have analyzed the reverse leakage current charaeteristies depending upon the voltage and presented the passivation coefficients B_(ID), B_K, which are used to quantitatively discuss the surface passivation effect and to distinguish the behavior of protection dielectrics. Using these two parameters, the authors have studied experimently the effect of the constructions of polymers, constitutions of side groups, purity and fillers in the silicon varnishes and rubbers on surface passivation. The researches have ahown that a modified silicon varnish which has more benzene groups on the side and higher purity is more suitable for surface passivation.

本文研究高压硅半导体器件P-N结表面与表面保护材料的界面问题,作者分析了反向漏电流随电压的变化规律,在此基础上提出钝化系数B_(ID)、B_K,用以定量地讨论钝化作用和鉴别保护材料的质量。同时,用这些参数作者实验研究了现今用于PN结表面钝化的硅漆和硅橡胶中聚合物结构、侧基的组成、纯度及填料对钝化作用的影响,结果表明侧基中苯基较多,纯度较高的改性硅漆对于表面钝化作用是比较优良的。

A sucessful reproducible method of preparation of semiconductor photoelectrode which was used as photoanode in the PEC cell for solar energy conversion has been described.Titanium dioxide film was thermally formed in the titanium plate in an electric furnace and was reduced in the argon or hydrogen atmosphere for obtaining a n-type semiconductor photoelectrode. The photoelectrochemical properties and the spectrum response of the PEG cell consisted of titanium dioxide was investigated, and the evolution...

A sucessful reproducible method of preparation of semiconductor photoelectrode which was used as photoanode in the PEC cell for solar energy conversion has been described.Titanium dioxide film was thermally formed in the titanium plate in an electric furnace and was reduced in the argon or hydrogen atmosphere for obtaining a n-type semiconductor photoelectrode. The photoelectrochemical properties and the spectrum response of the PEG cell consisted of titanium dioxide was investigated, and the evolution of hydrogen was observed obviously under the sun light.

本文叙述了用高温电炉法对钛片进行热氧化制备二氧化钛,并通过氩气或氢气热处理活化形成n-型半导体的二氧化钛光电极。此法优点是制备条件易于控制,结果易于重复。利用这种光电极组成了光电化学电池。研究了其光响应及光谱响应,并制得了氢。

The artificial pigmented Bilayer Lipid Membranes (PBLM) less than 100A thick separating two aqueous solutions containing different redox compounds. In our experiments the PBLM, such as meso-tetraphenylporphrin (TPP), Zn (Ⅱ)-meso-tetraphenylporphrin and so on, it is considered as an organic semiconductor heving two interfaces, one side of which is a p-type photocathode and the other side an n-type photoanode when illuminated. Thus light-generated charge carriers (electrons and holes)can be transferred across...

The artificial pigmented Bilayer Lipid Membranes (PBLM) less than 100A thick separating two aqueous solutions containing different redox compounds. In our experiments the PBLM, such as meso-tetraphenylporphrin (TPP), Zn (Ⅱ)-meso-tetraphenylporphrin and so on, it is considered as an organic semiconductor heving two interfaces, one side of which is a p-type photocathode and the other side an n-type photoanode when illuminated. Thus light-generated charge carriers (electrons and holes)can be transferred across the interface leading to the reduction on one side and an oxidation on the other side of the membrane.The conversion of light into electrical and/or chemical energy by pigmented BLM is demonstrated, perhaps, the development of the PBLM into a practical solar energy conversion device would be in the near future.

人工色素双分子类脂膜(PBLM)厚度小于100(?),分开两个含不同氧化还原物的水溶液。我们的实验用卟啉类色素BLM,在照光时可将此PBLM看作是有两个界面的有机半导体,一侧是p-型的光阴极,另一侧为n-型的光阳极。光生电荷(电子和空穴)可跨越界面而迁移,导至膜的一边发生还原作用,另一边发生氧化作用。已证实色素BLM可将光能转换为电能或化学能,或许在将来可将色素BLM用于太阳能的转换装置。

 
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