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semiconductor
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  半导体
    Study of Broadband 1.5μm Integrated Quantum Well Superluminescent Diodes and Semiconductor Optical Amplifiers
    宽谱1.5微米量子阱集成超辐射光源及半导体光放大器的研制
短句来源
    The Optical Characterzation of Ⅱ-Ⅵ Nano Semiconductor
    Ⅱ-Ⅵ族纳米半导体的光学特性的研究
短句来源
    Study of Relation between Microstructure and Optical Properties of Low-dimension Semiconductor Materials (InGaN quantum Well、InAs quantum dot)
    低维半导体材料(InGaN量子阱、InAs量子点)显微结构与光学性能关系研究
短句来源
    Study on Synthesis and Optical Properties of Semiconductor Nanomaterials
    半导体纳米材料的制备及发光性质的研究
短句来源
    Research of Semiconductor Laser Optical Coatings Technology
    半导体激光器光学膜技术研究
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  半导体材料
    Study of Relation between Microstructure and Optical Properties of Low-dimension Semiconductor Materials (InGaN quantum Well、InAs quantum dot)
    低维半导体材料(InGaN量子阱、InAs量子点)显微结构与光学性能关系研究
短句来源
    Study on the Preparation of Ⅱ-Ⅵ Semiconductor Materials-SiO_2 Composite Colloidal Particles
    Ⅱ-Ⅵ族半导体材料—二氧化硅复合胶体微粒的制备研究
短句来源
    Preparation and Optical Property of Ⅲ-V Compound Semiconductor Materials of GaN Epitaxial Film and InAs Quantum Dots
    Ⅲ-V族化合物半导体材料GaN外延膜和InAs量子点的制备及光学特性研究
短句来源
    Electrochemical C-V Method for Determination of Semiconductor Impurity Profile
    电化学C-V法测量半导体材料载流子浓度分布
短句来源
    Minority Carrier Diffusion Length Measurement in N-Type Semiconductor by Photoelectro-Chemical Method
    光电化学法测量N型半导体材料扩散长度
短句来源
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  半导体
    Study of Broadband 1.5μm Integrated Quantum Well Superluminescent Diodes and Semiconductor Optical Amplifiers
    宽谱1.5微米量子阱集成超辐射光源及半导体光放大器的研制
短句来源
    The Optical Characterzation of Ⅱ-Ⅵ Nano Semiconductor
    Ⅱ-Ⅵ族纳米半导体的光学特性的研究
短句来源
    Study of Relation between Microstructure and Optical Properties of Low-dimension Semiconductor Materials (InGaN quantum Well、InAs quantum dot)
    低维半导体材料(InGaN量子阱、InAs量子点)显微结构与光学性能关系研究
短句来源
    Study on Synthesis and Optical Properties of Semiconductor Nanomaterials
    半导体纳米材料的制备及发光性质的研究
短句来源
    Research of Semiconductor Laser Optical Coatings Technology
    半导体激光器光学膜技术研究
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  “semiconductor”译为未确定词的双语例句
    Tunable Wavelength Conversion Based on FWM in Semiconductor Fiber Ring Laser
    基于SFRL的FWM型可调谐全光波长转换器的研究
短句来源
    Study of MOCVD TiN in Advanced Semiconductor Manufacturing
    MOCVD TiN薄膜在先进集成电路制造中应用的研究
短句来源
    On the Characteristics and Mechanism of Zn-Cr-Fe Semiconductor Hygristor Materials
    Zn-Cr-Fe系半导瓷湿敏电阻材料特性与机理研究
短句来源
    On the Relationship between Breakdown Behaviour and Electrical Structure of Grain Boundary of BaTiO_3 Ceramic Semiconductor
    BaTiO_3半导瓷耐压与晶界电结构关系的研究
短句来源
    A Research on NO_x Gas Sensitivity of Metal Oxide Semiconductor SnO_x Thin Film
    金属氧化物半导体SnO_x薄膜对NO_x气体敏感性能研究
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  semiconductor
CdS semiconductor nano-films were grown on ITO glass substrates by means of chemical bath deposition (CBD), with Cd(NO3)2 as Cd ion and (NH2)2CS as S ion sources.
      
The sensitive unit of the accelerometer is the metal-oxide semiconductor (MOS) ROs located on silicon beams.
      
The coupling ratio of the two MMI couplers deviates from 50:50 but the deviation is nearly the same, which is decided by good uniformity of semiconductor planar lightwave circuit (PLC) process.
      
An ultrasonic linear motor is proposed and fabricated by using the longitudinal and bending vibration double mode bolt-clamped Langevin type transducer to meet high power and speed requirements in the aerospace and semiconductor industries.
      
The electronic properties of SWCNTs can be modified by adsorbate atoms and metal-semiconductor and semiconductor-semi-conductor transitions can be achieved by the doping of alkali atoms.
      
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The advances of solid state negative-resistance devices, such as tunnel diodes, variable reactance semiconductor diodes used in parametric forms, lead to the interests of the study of periodically loaded travelling type distributed amplifiers. This paper gives a detailed analysis on the transmission characteristics of this type of microwave amplifier. The analysis includes the study of the phase equation, gain equation, the frequency-phase characteristics, the pass band vs stop band relationships and the...

The advances of solid state negative-resistance devices, such as tunnel diodes, variable reactance semiconductor diodes used in parametric forms, lead to the interests of the study of periodically loaded travelling type distributed amplifiers. This paper gives a detailed analysis on the transmission characteristics of this type of microwave amplifier. The analysis includes the study of the phase equation, gain equation, the frequency-phase characteristics, the pass band vs stop band relationships and the phase velocity and group velocity characteristics. A detailed analysis on the travelling wave type semiconductor diode parametric amplifier is also given. Important universal curves and design conditions are also included for ready references.

由于各种固体负阻器件的进展,例如隧道二极管,参量应用的变容二极管等,从而引起了对具有周期性负载行波式分布放大器的研究。 本文对这一类微波放大器的传输特性进行了详细分析,对其主要性能的分析包括:相位方程,增益方程,频率-相位关系,通带及阻带,相速及群速等等。文中给出了变容二极管行波式参量放大器的分析;还给出了重要的通用曲线及设计要点以供参考。

The effects of sample dimensions, surface recombination velocity and the ponetrati- ng length of the illuminating light on the high order modes in photoconductive decay of excess carriers in semiconductor have been studied. It was found that the role of the high order modes can be considerably minimized by using penetrating light, sample of large size and low surface recombination velocity. The bulk lifetime of the filament can than be more accurately determined.

观察了样品几何尺寸、表面复合速度及光的贯穿程度,对半导体少数载流子光电导衰退中高次模的影响。在测量时使用贯穿光、大尺寸样品、及使样品表面复合速度较低时,高次模的作用可以减少,因而能准确测得体寿命。

Many novel nanosecond pulse circuits with nanosecond rise time and high-repetition rate using step recovery diodes are discussed and recommended in this paper. The physical mechanisms of these circuits are described qualitatively by using the charge storage concepts and theory.The circuits discussed in this paper are divided into three groups: the pulse forming circuits which transform high frequency sinusoidal waves into nanosecond pulses; the pulse shaping circuits which transform pulses with slower transient...

Many novel nanosecond pulse circuits with nanosecond rise time and high-repetition rate using step recovery diodes are discussed and recommended in this paper. The physical mechanisms of these circuits are described qualitatively by using the charge storage concepts and theory.The circuits discussed in this paper are divided into three groups: the pulse forming circuits which transform high frequency sinusoidal waves into nanosecond pulses; the pulse shaping circuits which transform pulses with slower transient response into pulses with faster transient response, and the pulse generator circuits which make use of the step recovery diodes combined with other high-speed semiconductor devices.The inherent capability and importance of the step recovery diodes in the nanosecond pulse circuits are well illustrated by the discussion of various circuits developed in this paper. Other types of new pulse circuits using step recovery diodes with more detailed analysis and practical circuits will be reported in the near future.

本文討論了利用二极管由正向至反向恢复的阶跃特性所构成的多种新穎毫微秒脉冲电路;指出了阶跃恢复二极管在高重复頻率毫微秒脉冲电路中应用的多种可能性;并根据电荷存儲概念对各电路的物理机构提出了定性描述。 本文所研究的电路分成三类:将高重复頻率正弦波变換成毫微秒脉冲的形成电路;将响应慢的脉冲变換成响应快的脉冲的整形电路;与晶体管配合的毫微秒脉冲发生器电路。 通过这些电路的討論,提出阶跃恢复二极管在脉冲电路中应用的重要性及潛在能力。在以后的論文中将探討其它新型电路,并对某些电路作較詳尽的分析,提供实际应用举例。

 
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