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graded
相关语句
  渐变
    Studg of Graded Index Multi Mode Optical Waveguide
    渐变折射率多模光波导的研究
短句来源
    An Accurate Analysis of Graded Index Optical Waveguides
    渐变折射率光波导的精确分析
短句来源
    Propagation Characteristics of Metal-Clad Graded Index Planar Optical Waveguides
    金属包层渐变折射率平板波导传播特性
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    Calculation of Propagation Constant of Ti:LiNbO_3 Waveguide with 2-Dimensional Graded Index Profiles
    Ti∶LiNbO_3二维渐变折射率光波导传播常数的计算
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    Growth and Characterization of Linearly Graded SiGe Buffer\+*
    组份线性渐变SiGe缓冲层的生长及其表征
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  “graded”译为未确定词的双语例句
    Theory of The Nonlinear Graded Index Fiber Lens
    非线性变折射率纤维透镜理论
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    Quantitative Analysis of Linearly Graded p-n Junctions by the Inverse Operator Method
    应用逆算子方法定量分析线性缓变p-n结
短句来源
    Base Transit Time of HBT with Linearly Graded SiGe Base at Low Temperatures
    线性缓变SiGe HBT低温基区滚越时间的研究
短句来源
    Numerical Analysis of Gratings with Graded Refractive Index Profile Waveguides
    Numerical Analysis of Gratings with Graded Refractive Index Profile Waveguides
短句来源
    Influence of Graded Index Waveguides on the Gain Difference Between TE 0 and TM 0 Modes of Semiconductor Optical Amplifiers
    缓变波导对半导体光放大器TE_0和TM_0模式增益差的影响
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  graded
Structure of some ?-graded lie superalgebras of vector fields
      
In this paper we classify?-graded transitive Lie superalgebras with prescribed nonpositive parts listed in [K2].
      
We also study the structure of the exceptional?-graded transitive Lie superalgebras and give their geometric realization.
      
In the first paper we determined the graded algebra A(Γ2[3]) of Siegel modular
      
The graded $\mathbb{F}_p$-algebra A(V) turns out to be normal and Cohen--Macaulay, there is an analogue of Steenrod powers and also a "Karagueuzian and Symonds-type" finiteness theorem for its invariant theory, etc.
      
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Measurements of the voltage-current characteristics and space-charge capacitance have been made on the epitaxial p-n junctions grown by method of silicon carbidt crystals sublimation. An analysis of the forward voltage-current and voltage-capacitance charateristics shows that the structures of the p-n junction may vary over a quite wide range, from typical p-i-n junctions to nearly linear graded junctions resulted from different epitaxial growth parameters, but most of them have intermidiate structures....

Measurements of the voltage-current characteristics and space-charge capacitance have been made on the epitaxial p-n junctions grown by method of silicon carbidt crystals sublimation. An analysis of the forward voltage-current and voltage-capacitance charateristics shows that the structures of the p-n junction may vary over a quite wide range, from typical p-i-n junctions to nearly linear graded junctions resulted from different epitaxial growth parameters, but most of them have intermidiate structures. The effect of epitaxial growth parameters on structures of p-n junctions is briefly discussed.

本工作测量了升华外延碳化硅p-n结的电流-电压特性和空间电荷电容。通过对正向电流-电压特性及电容-电压特性的分析,表明:随着外延生长条件的不同,这种p-n结的结构可以在相当宽的范围内变化,从近于线性梯度结直到典型的p-i-n结,而大多数p-n结则介于这两者之间。文中就外延生长条件对p-n结结构的影响进行了简略的讨论。 此外,还给出了升华外延碳化硅p-n结正向电发光的亮度-电流关系、光谱分布以及脉冲和交流激励的测量结果。

In this paper a new type winding of electrical machines--harmonic distribution winding hasbeen presented. This technique differs from the conventional one and it purposefully makes use of harmonic field in air gap generated by this winding for harmonic compensation or approach. In many applications,it has been proved that the limit of linearity in linear rotatory transformers may be broken by means of this winding and the linearity may be held on grade 0(±0.055% or ±2'),in some products even up to ±0.02%...

In this paper a new type winding of electrical machines--harmonic distribution winding hasbeen presented. This technique differs from the conventional one and it purposefully makes use of harmonic field in air gap generated by this winding for harmonic compensation or approach. In many applications,it has been proved that the limit of linearity in linear rotatory transformers may be broken by means of this winding and the linearity may be held on grade 0(±0.055% or ±2'),in some products even up to ±0.02% or ±45". In this paper theory of this new winding and error regularity of these machines have been analyzed and test results provided.

本文提出了微电机的一种新绕组形式——谐波分布绕组。我们与一般做法不同,有意识地利用绕组产生的气隙谐波磁场,进行谐波补偿和逼近。多次应用证明,采用这种绕组形式,可使线性旋转变压器突破极限精度,并稳定在0级(±0.055%,±2′)以上,某些产品的线性精度甚至可达±0.02%,±45″。文中对这种绕组的理论和线性误差规律作了分析,并列出了产品试验结果。

This paper presents a method called TTSM (Three-Three Screening Method) to select optimal screening conditions for semiconductor devices. TTSM is so termed,because it requires three steps; accelerated life test is done under the stresses of over three grades; then three formulas-log-normal distribution, exponential distribution and Arr-henius relationship are used to handel with the test data and at last three diagrams are ploted based on the calculated values.

本文提出了一种选取半导体器件最佳筛选条件的统计方法.此法由于要在三种以上应力做加速寿命试验,要用到对数正态分布等三个数学方程,要作三张图,故将本法称之为TTSM(Three-Three Screening Method).它的具体内容是:根据用户或定型考核对器件的可靠性要求,将器件在三种以上高应力下进行加速寿命试验,然后根据加速寿命试验获得的数据,进行数理统计处理,从而选择出最佳筛选条件和筛选时间.TTSM抛弃了所谓筛选要剔除全部早期失效的管子这一难以确定的传统概念,把半导体器件筛选条件的选择建立在科学的统计计算的基础之上.TTSM已在去年WC 52双栅 FET的定型考核中用来选择筛选条件,所作预测与一千小时工作寿命考核结果一致.在WC50 FET生产考核中,所作预测与 500小时工作寿命考核结果一致.证明TTSM用来选择器件的最佳筛选条件和筛选时间是可行的.TTSM还可以预测在所选的筛选条件下剔除次品的百分比,为生产者和使用者在权衡数量和质量的得失时预先提供信息.

 
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