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pv
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  光伏
    SELECTION OF PARAMETERS OF N-on-P Hg_(0.8)Cd_(0.2)Te PV DETECTORS
    N-On-P Hg_(0.8)Cd_(0.2)Te光伏探测器参量的选择
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    DEVELOPMENT OF 1~3μm PV HgCdTe ARRAYS
    1~3μm HgCdTe光伏型列阵探测器的研制
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    C-V AND G-V CHARACTERISTICS OF 1~3 μm HgCdTe PV DETECTORS FABRICATED BY BORON IMPLANTATION
    1-3μm硼注入碲镉汞光伏器件的C-V禾G-V特性研究
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    Damage Mechanism of InSb Detectors (PV) when Laser Irradiated
    激光辐照光伏型锑化铟探测器的损伤机制研究
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    256 Element Insb PV FPA Detector
    256元锑化铟光伏焦平面探测器
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  “pv”译为未确定词的双语例句
    AN INVESTIGATION ON THE TEMPERATURE DEPENDENCE OF SPECTRAL QUANTUM EFFICIENCY η(λ) OF InSb(PV) INFRARED DETECTORS
    InSb(PV)红外探测器分谱量子效率η(λ)的温度关系研究
短句来源
    PASSIVATION OF 3-5μm PV INSB DETECTOR WITH PSG FILM
    3~5μmPVInSb测器器的PSG钝化技术
短句来源
    Impedance Frequency Analysis of PV InSb Infrared Detectors
    PV InSb红外探测器的阻抗-频率特性分析
短句来源
    THE MBE GROWTH OF HgCdTe/GaAs AND FABRICATION OF PV DETECTORS
    分子束外延HgCdTe/GaAs的生长和光伏探测器的研制
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    Damage effect of CW CO_2 laser on PV type InSb detector
    CW CO_2激光对PV型InSb探测器的破坏效应
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  pv
Cloning and expression of a luxRhomologue from Xanthomonas oryzae pv.
      
Pressure-volume curve (PV curve) technique is a major method for studying critical plant water potential and critical tissue water content when plasmolysis takes place.
      
In the present study, a mathematical solution method is put forward to obtain parameters based on the PV curve.
      
Renewable energy does not simply equal to using a photovoltaic (PV) board.
      
viceae strain CIAM 1026) and pathogenic (Pseudomonas syringae pv.
      
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The experimental studies of the so-called "Flashing" with the InSb (PV) infrareddetector are presented. The experimental arrangement, the results and a brief discussionare described. The optimum conditions for flashing are looked for. It is found that theresistance of the detector can reach more than 2×10~(11)Ω after flashing at the tempera-ture of 50K.

本文叙述了天文上广为使用的锑化铟光伏红外探测器的“闪光”现象的实验研究,它可以大大提高探测器的等效电阻(通常可高达2×10~(11)Ω以上),并可有效地降低噪声。

Considering the effect of the space charge layer and using the depletion region approximation, the analytical expressions of I-V characteristic and detectivity (D_λ~*) for the PN junction PV detectors are derived. In terms of these expressions, the effects of bias voltage, optical absorption coefficient, bulk lifetime of minority carriers and recombination velocity at the illuminated surface on D_λ~* of InSb PV detector with thick base region are numerically analysed.

本文考虑了结空间电荷区的影响,在耗尽近似下,导出了PN结红外光伏探测器I-V特性和探测率D_λ~*的解析式,并用所得结果分析了偏压、光吸收系数、少子体寿命和表面复合速度对厚基区InSb光伏探测器D_λ~*的影响。

It is pointed out that, responsivity to radiation power, R_(pv), and noise equivalent power, NEP(v), are not good parameters to characterize far-infrared video detectors when sizes of detector components are not orders of magnitude greater than operating wavelengths. Based on the theory of the angular spectrum of plane waves, it is shown that responsivity to the flux density, R_(Fv), antenna pattern, P_(nv)(θ, φ), noise equivalent flux density, NEF(v)are parameters for characterizing the performances of...

It is pointed out that, responsivity to radiation power, R_(pv), and noise equivalent power, NEP(v), are not good parameters to characterize far-infrared video detectors when sizes of detector components are not orders of magnitude greater than operating wavelengths. Based on the theory of the angular spectrum of plane waves, it is shown that responsivity to the flux density, R_(Fv), antenna pattern, P_(nv)(θ, φ), noise equivalent flux density, NEF(v)are parameters for characterizing the performances of far infrared video detectors for radiometric applications. Methods of measuring these parameters are briefly described. Typical measured results of InSb far-infrared hot electron bolometers are given.

本文指出在待测辐射的波长λ与探测器的元件尺寸相比不是很小时,采用响应率R_p,噪声等效功率NEP作为描述远红外直接探测器性能的参数所产生的问题。从平面波的角分布谱理论出发论证了:对于应用于辐射度学测量的远红外直接探测器,可以用对辐射通量密度的响应率R_(fv),天线方向图P_(vn)(θ,φ),噪声等效通量密度NEP(v)作为描述其性能的参数。并简略地说明测量的方法和原理,给出了对于InSb过热电子远红外探测器的典型测量结果。

 
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