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compensation level
相关语句
  补偿度
    The experimental results show that the concentration and compensation level of the impurity greatly affect the electric properties of SiC at low temperatures.
    实验结果表明:杂质浓度和补偿度对低温下SiC的电性能有很大影响,轻度补偿的掺氮6H-SiC是施主氮的两个能级共同起作用;
短句来源
    The analysis results show the determinative level and experimental value of ionization energy are determined from doped concentration and compensation level.
    分析结果表明,控制杂质能级和表观杂质激活能由补偿度和杂质浓度决定。
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  “compensation level”译为未确定词的双语例句
    The influence of doped concentration and compensation level on mobility is inspected from theoretical calculation.
    计算给出不同浓度和补偿程度对迁移率与温度关系的影响。
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  compensation level
The access fee per MWh depends on the injection zone and a self-selected strike price that serves as an insurance "deductible" that determines the scheduling priority of the insured transaction and the compensation level in case of curtailment.
      
Earlier works have found market value to be a compensation level too high to promote efficiency.
      
The centralized system can replicate thedecentralized system with a sufficiently high compensation level.Since compensation has proved difficult, a centralized systemfaces greater obstacles than a decentralized system.
      
Thecapacity is increasing in the compensation level if the marginalbenefit of treatment capacity is sufficiently large, and in thegovernment's weight on aggregate social welfare relative tolobbying activities.
      
Significant isoprene emissions occurred when plants were saturated with CO2, i.e., below the light compensation level for net photosynthesis (100 μmol m-2 s-1).
      
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Temperature dependence of the fundamental electrical properties have been measured in the range of temperature 7~1000K on nitrogen-doped 6H SiC material. The fittings of experimental curve are carried out according to electrical neutral equation. The theoretical mobility is calculated using scattering mechanism of compound semiconductor. Doped concentration, compensation impurity concentration, ionization energies and effective mass are obtained from the fitting. The analysis results show the determinative...

Temperature dependence of the fundamental electrical properties have been measured in the range of temperature 7~1000K on nitrogen-doped 6H SiC material. The fittings of experimental curve are carried out according to electrical neutral equation. The theoretical mobility is calculated using scattering mechanism of compound semiconductor. Doped concentration, compensation impurity concentration, ionization energies and effective mass are obtained from the fitting. The analysis results show the determinative level and experimental value of ionization energy are determined from doped concentration and compensation level. There are two expect level of 0.08eV and 0.12eV for nitrogen-doped 6H SiC material. When compensation concentration is higher than concentration of lower level, higher levels become determinative level of material and behavior of material is described by monolevel electrical neutral equation. The calculation results of theoretical mobility indicate that the scattering mechanisms of compound semiconductor are also suitable for 6H sic material. The influence of doped concentration and compensation level on mobility is inspected from theoretical calculation.

测量了7~1000K的掺氮6HSiC材料基本电学性质,用电中性方程对载流子浓度温度倒数关系曲线进行拟合,利用化合物半导体散射机构计算了迁移率。数据拟合分析得到样品的掺杂浓度、补偿浓度、杂质激活能和载流子有效质量。分析结果表明,控制杂质能级和表观杂质激活能由补偿度和杂质浓度决定。掺氮6HSiC材料预期有008eV、012eV两个能级,当补偿杂质浓度大于较小能级浓度时,材料将由较高的能级控制并可由单能级电中性方程描述。迁移率计算结果表明,采用化合物半导体散射机构计算6HSiC迁移率也是适合的。计算给出不同浓度和补偿程度对迁移率与温度关系的影响。

Electric parameters including resistivity,mobility,and free carrier concentration are measured at low temperatures for n-type 6H-SiC from China and Cree corporation.Their impurity concentration and levels are obtained from the fitting data of FCCS.The experimental results show that the concentration and compensation level of the impurity greatly affect the electric properties of SiC at low temperatures.The two different levels of nitrogen donor work together for 6H-SiC with a low compensation,but...

Electric parameters including resistivity,mobility,and free carrier concentration are measured at low temperatures for n-type 6H-SiC from China and Cree corporation.Their impurity concentration and levels are obtained from the fitting data of FCCS.The experimental results show that the concentration and compensation level of the impurity greatly affect the electric properties of SiC at low temperatures.The two different levels of nitrogen donor work together for 6H-SiC with a low compensation,but the accepter levels work at low temperatures for 6H-SiC with a high compensation.The peak of the mobility curve of the latter decreases and moves to the right as temperature increases.At the same time,the highly compensated SiC is transformed from n-type to p-type at low temperatures,which is analyzed theoretically.

测试了国产和美国Cree公司生产的n型6H-SiC低温下的电学参数,包括电阻率、迁移率和自由载流子浓度,并用FCCS软件数据拟合分析得到两种SiC的杂质浓度和能级.实验结果表明:杂质浓度和补偿度对低温下SiC的电性能有很大影响,轻度补偿的掺氮6H-SiC是施主氮的两个能级共同起作用;而重度补偿的6H-SiC在低温时则是受主能级起作用,并且后者迁移率随温度变化曲线的峰值降低并右移.同时发现重度补偿的SiC在较低温度时由n型转变成了p型,并从理论上分析了产生这种现象的原因.

 
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