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Some combinatorial optimization problems arising from VLSI circuit design


This paper is basically a survey to show a number of combinatorial optimization problems arising from VLSI circuit design.


A packing of the complete directed symmetric graph DKv with mcircuits, denoted by (v,m)DCP, is defined to be a family of arcdisjoint mcircuits of DKv such that any one arc of DKv occurs in at most one mcircuit.


According to different mechanics and analytical models, end force resulting from open magnetic circuit of PMLSM was greatly decreased by optimizing the length of the PMLSM mover.


The coupling ratio of the two MMI couplers deviates from 50:50 but the deviation is nearly the same, which is decided by good uniformity of semiconductor planar lightwave circuit (PLC) process.

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 This paper presents a method by which a complete set of static characteristics of a power tube, including that of positive grid region, can be seen all at once on the screen of a cathode ray oscilloscope. Use is made of pulsetechnique and intensity modulation of a cathode ray tube. Circuits are given and explained for observing plate characteristics on the plate currentplate voltage plane as well as constant current contours on the plate voltagegrid voltage plane, the former being shown in fig. 11 and... This paper presents a method by which a complete set of static characteristics of a power tube, including that of positive grid region, can be seen all at once on the screen of a cathode ray oscilloscope. Use is made of pulsetechnique and intensity modulation of a cathode ray tube. Circuits are given and explained for observing plate characteristics on the plate currentplate voltage plane as well as constant current contours on the plate voltagegrid voltage plane, the former being shown in fig. 11 and the latter in fig 21. It is believed that the method here described will be of some help to tube manufacturers.  利用脉冲技术和阴极射线管栅极调亮法,可以在示波器上描绘出整套特性曲线,特别是正栅区域的特性。这个方法对于强力管的制造厂检验所制成品是否合乎规格时会有一些帮助。  With slight improvement of ordinary Rossi circuit, a coincidence circuit of resolving time of 1.5 x 10~(7) sec. has been built. Using this instrument, the annihilation radiations of small component β+rays emitted by Zn~(65) have been investigated under various experimental conditions. The experiments demonstrate that the 0.21 Mev γrays found previously by some authors[2] in Zn65 may be the backscattered βrays due to large component 1.12 Mev RRRrays of Zn65. Moreover, the coincidence rate of... With slight improvement of ordinary Rossi circuit, a coincidence circuit of resolving time of 1.5 x 10~(7) sec. has been built. Using this instrument, the annihilation radiations of small component β+rays emitted by Zn~(65) have been investigated under various experimental conditions. The experiments demonstrate that the 0.21 Mev γrays found previously by some authors[2] in Zn65 may be the backscattered βrays due to large component 1.12 Mev RRRrays of Zn65. Moreover, the coincidence rate of collimated annihilation radiations gives the percentage of β+decay of Zn65 per total disintegration as (1.56 ±0.16)%.  本文介绍一个具有0.15微秒分辨时间,测量由盖革计数管产生的脉冲的二重符合线路。并阐述在应用这符合线路观测Zn~(65)β~+射线的湮(氵威)符合时,观察到γ射线的康普顿散射所引起的符合。  An equivalent circuit of transistors operating in saturation region is suggested. This circuit contains a transistor operating in active region and a diode biased in forward direction. By using this equivalent circuit, the physical meaning of storage time of transistors may be explained more intuitively. With this, the storage time in drift transistor, Which is common base connected, has been investigated. By solving the continuity equation, the steady state and the transient components of... An equivalent circuit of transistors operating in saturation region is suggested. This circuit contains a transistor operating in active region and a diode biased in forward direction. By using this equivalent circuit, the physical meaning of storage time of transistors may be explained more intuitively. With this, the storage time in drift transistor, Which is common base connected, has been investigated. By solving the continuity equation, the steady state and the transient components of the densities of minority carriers in diode near the pnjunction is obtained. By setting these two components equal in magnitude and opposite in sign, we get a formula, from which the storage time may be determined. The storage time in some special cases has been calculated. The results show that the storage time depends upon the life time of minorities and the surface recombination velocities both in base region and in collector region. This may be a guide for design a transistor with more short storage time.  半导体三极管在饱和区工作时,其等效电路可以用一个三极管及一个由集电极及基极构成的二极管联成的电路表示出来,其中三极管在有源区工作,而二极管在正向偏压下工作。这样的等效电路具有比较明显的物理意义。利用这个电路来求漂移管在一个共基极电路中脉冲工作下的储存时间。解出非平衡少数载流子的连续性方程,求出二极管pn结附近非平衡少数载流子密度的稳定态分量及暂态分量,从而得到决定储存时间的方程。计算结果表明,储存时间与基极区域及集电极区域中非平衡载流子的寿命及表面复合速度有关。减少寿命及增加表面复合速度就可以减少储存时间。   << 更多相关文摘 
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