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metal semiconductor contact
相关语句
  金属-半导体接触
     It is explained from both thermodynamics and metal semiconductor contact points of view why a pn junction cannot output voltage or current at a thermal equilibrium condition(under a zero bias).
     从热力学第一定律、金属 -半导体接触等不同角度详细解释了热平衡 (零偏下 )时pn结不可能对外输出电压和电流的原因 .
短句来源
  “metal semiconductor contact”译为未确定词的双语例句
     Considering the tunneling effect and the Schottky effect,the metal semiconductor contact is simulated by using self consistent ensemble Monte Carlo method.
     运用自洽的蒙特卡罗方法模拟了肖特基接触的隧穿效应 .
短句来源
  相似匹配句对
     Noise Characteristic in Metal-Semiconductor Contacts
     金属/半导体接触孔噪声特性研究
短句来源
     THE ELECTRONIC STRUCTURE OF METAL-SEMICONDUCTOR LUCS
     金属-半导体多层超薄共格结构(LUCS)的电子结构
短句来源
     PREPARATION OF METAL AND SEMICONDUCTOR NANOPARTICLES FILM
     金属和半导体纳米微粒薄膜的制备
短句来源
     INTERFACES OF METAL SEMICONDUCTOR CONTACTS AND SCHOTTKY BARRIER
     金属-半导体界面与肖特基势垒
短句来源
     On the Measurement of Metal-Semiconductor Contact Resistance in Integrated Circuits
     集成电路中金属-半导体接触电阻的测试
短句来源
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  metal semiconductor contact
We analyze the influence of the surface charge density built-up at the metal semiconductor contact on the electron availability.
      
A Schottky-barrier (SB) metal/semiconductor contact (MSC) is considered.
      
The minimum required metal-semiconductor contact resistance, as well as the heat sink requirement are also given.
      
Our polyaniline porous silicon junction behaves in a similar fashion to a metal semiconductor contact.
      
In the limit of high contact resistance, the metal-semiconductor contact can be considered as a reverse-biased Schottky contact.
      


The influence of spreading resistance and probe-metal film contact resistance on the contact resistance of metal-semiconductor is generally neglected in the conventional methods used for measuring metal-semiconductor contact risistance. Thus errors would be caused when one uses these methods to measure the metal-semi conductor contact resistance.In this paper, according to the radial transmission line mode of circular ring electrode, an equation bearing...

The influence of spreading resistance and probe-metal film contact resistance on the contact resistance of metal-semiconductor is generally neglected in the conventional methods used for measuring metal-semiconductor contact risistance. Thus errors would be caused when one uses these methods to measure the metal-semi conductor contact resistance.In this paper, according to the radial transmission line mode of circular ring electrode, an equation bearing the quantitative relationship between metal-semiconductor contact resistance and spreading resistance of thin film, probe-thin metal film contact resistance, current and voltage is derived. Based upon the equation, a new mode for measurement of metal-semiconductor contact resistance using four-point probe method is proposed. The metal-semiconductor contact resistance is accurately measured and the error sources from this measurement are discussed.

根据环形电极点辐射传输线模型,导出金属-半导体接触电阻对扩展电阻、探针与金属薄膜之间的接触电阻、电压和电流的定量关系.设计出一个用四探针方法测定金属-半导体接触电阻的新方案.精确测定了金属-半导体的接触电阻.讨论了金属-半导体接触电阻测量值的误差来源.

The fundamental concept of metal-semiconductor contact resistance is introduced. The main part of this paper deals with how to correctly choose the right microelectronic test pattern to measure the metal-semiconductor contact resistance according to the type of contact. One should be careful in using the parameter "spe- cific contact resistance",

本文首先介绍金属-半导体接触电阻的基本概念。然后指出如何根据待测接触电阻的类型正确选用合适的微电子测试图形。最后强调说明在引用参数“接触电阻率”时应该注意的问题。

In this paper, a method to determine the specific contact resistance of metal-semiconductor contact------circular ring structure method is presented. The equations for specific contact resistance which are used to both the definite thick and semiinfinite samples were derived. Some measurements and calculations have been carried out, the results are in good agreement with chose of methods published in the literature.

本文中提出了一种测量金属-半导体欧姆接触比接触电阻的新方法-圆环结构测试法。导出了适用于半无限大和有一定厚度的半导体材料的比接触电阻表达式,用此方法进行实验测量和计算,所得结果与文献结果符合得很好。

 
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