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blue led
相关语句
  蓝光led
     Fabrication of White LED Using InGaN Blue LED and Ce~(3+):YVO_4 Fluorescence
     用Ce~(3+):YVO_4晶体荧光粉与蓝光LED制造自然白光LED
短句来源
     Gd~(3+) doped YAG:Ce~(3+) phosphor is synthesized to cooperate with different wavelength of blue LED.
     为满足不同波长蓝光LED的要求,本文合成了Gd~(3+)掺杂的YAG:Ce~(3+)荧光粉。
短句来源
     The white LED consisting of a blue LED and yellow emitting Y_3Al_5O_(12):Ce (YAG:Ce) is the main route, but it has a low luminescent efficiency.
     蓝光LED与黄色钇铝石榴石荧光粉(Y_3Al_5O_(12):Ce,YAG:Ce)配合制备白光LED,是当前发展白光LED的主流,但其存在发光效率低的缺点。
短句来源
     Optimization of Contact Resistance of GaN Blue LED Electrodes
     GaN蓝光LED电极接触电阻的优化
短句来源
     The Fabrication of White LED Using InGaN Blue LED and YAG Fluorescence
     用InGaN蓝光LED与YAG荧光粉制造自然白光LED
短句来源
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  蓝色led
     This paper reports configurations and properties of InGaN single-quantum-well (SQW) superbright blue LED whose luminous intensity at forward current of 20 mA is about 8 cd with the peak wavelength of 450 nm and the full width at half-maximum of 25 nm.
     介绍了InGaN单量子阱超高亮度蓝色LED的结构和性能,其发光强度、峰值波长和光谱半宽在正向电流为20mA时,分别为8cd、450nm和25nm。
短句来源
     Recently,the technology of LED display developed quickly. With the bright blue LED appearing,the true color LED panel has been used widespread in many areas.
     近几年来LED显示技术发展迅速,尤其是随着蓝色LED器件超高亮度的实现,LED全彩显示屏得到了广泛的应用。
短句来源
     This paper gives a detailed description of the progress in visible LED,including the blue LED,the trend of progress,the development of ultra brightness LED,and the extension of application.
     较为详细地叙述了可见光LED的进展,包括发展趋势、蓝色LED、超高亮度LED的研制及应用领域的拓宽
短句来源
     Researching on full colour LED made up of AlGaInP as red LED material and InGaN as green and blue LED materials, in this paper we demonstrate the use of LED as backlight of the field sequential colour LCD through lots of experiments and the gained data.
     以红色LED材料AlGaInP,绿色和蓝色LED材料InGaN三芯合一的全彩LED为研究对象,通过大量实验及所测数据,研究用高密高位LED作场序彩色液晶显示器背光源,在不同情况下形成的彩色对人眼的视觉影响;
短句来源
     This paper studies the effect of the five kinds of LEDs,including red,yellow,blue,green and purple,on the growth of a cellulase producing strain WB-2.It shows that all of the five lights have a pushing effect on WB-2's growth,and among them the purple LED may result in a largest increase in the amount of bacteria with a percentage of 7.1%,while the blue LED can increase the activity of cellulose by 9.0%.
     研究了红色、黄色、蓝色、绿色和紫色五种LED对纤维素酶产生菌W B-2生长代谢的影响,结果表明:五种光源对W B-2的生长均有一定的促进作用,其中紫色LED促进细菌的生物总量增大最大,达到了7.1%; 蓝色LED促进发酵液中纤维素酶酶活力的提高,达到了9.0%.
短句来源
  蓝色发光二极管
     InGaN ultrahigh brightness blue LED
     铟镓氮超高亮度蓝色发光二极管
短句来源
     the plants under various combinations of red and blue LED grew with nearly normal state, but the plants under the combination of 90% red and 10% blue LED possessed the best comprehensive indexes.
     红色和蓝色发光二极管组合下的植株生长基本正常 ,但 90 %红色发光二极管 + 1 0 %蓝色发光二极管组合下植株的综合指标最佳。
短句来源
     At a forward current of 20 mA, the brightness reaches 1.2 cd, the forward voltage drop is 3.6 V.Compared with commercially available blue LEDs, brightness performance is 100 times better. The candela-class ultrahight brightness blue LED paves the way for outdoor full-color LED display panels.
     在正向电流20mA时,亮度达1.2cd,正向压降为3.6V,比市售的其它蓝色发光二极管的亮度提高100倍,其在室外全色显示方面具有广阔的应用前景。
短句来源
     This paper reports material, device, structure, characteristics and application for InGaN ultrahigh brightness blue LED.
     从材料、器件、结构、特性及其应用等方面介绍了InGaN超高亮度蓝色发光二极管
短句来源
     Conclusion The normal growth and development of plantlets needs two light sources of red and blue LED, and the combination of 90% red and 10% blue LED is the optimum one among those tested combinations.
     结论植株正常生长可采用红色和蓝色发光二极管的一定组合 ,以 90 %红色 + 1 0 %蓝色发光二极管更为适宜。
短句来源
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  “blue led”译为未确定词的双语例句
     Progress on Research of Blue LED Converted White Materials YAG∶Ce~(3+)
     白光LED用YAG∶Ce~(3+)荧光粉的研究进展
短句来源
     It is reported that the white light emitting diodes are fabricated by combining Ce3+ :YVO4 fluorescence and InGaN/GaN blue LED.
     本文报导了通过结合自行制备的掺铈钒酸钇晶体(Ce3+:YVO4)荧光粉与InGaN/GaN蓝光发光二极管(LED)结合而得的白光发光二极管(W-LED)。
短句来源
     In this work, the high power white lighting emitting diode(LED) were packaged on a anthropophagi lead by GaN-based blue LED chip in the size of 1 mm×1 mm and YAG∶Ce yellow fluorescence.
     用 1mm× 1mm的大尺寸GaN基蓝光发光二极管 (LED)芯片和YAG∶Ce黄光荧光粉在食人鱼支架上封装大功率白光LED。
短句来源
     Progress on Research of Blue Led converted white Materials YAG:Ce~(3+)
     蓝光转换白光荧光粉YAG:Ce~(3+)的研究进展
短句来源
     Research and development of high brightness GaN-based blue LED and white LED
     高亮度GaN基蓝光与白光LED的研究和进展
短句来源
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  blue led
Illumination of a sensitiser, toluidine blue led to a time dependent increase in singlet oxygen production as detected by the formation of 2,2,6,6-tetramethylpiperidine-1-oxyl (TEMPO) by EPR spectrometry.
      
The typical brightness of a phosphor-converted LED, which was made with synthesized phosphors and a blue LED, was 712 mcd.
      
Especially, the yellow light intensity from (Sr,Ba)SiO4 : Eu phosphors was comparable to YAG : Ce phosphors in case of blue LED excitation.
      
More than 65% enhancement in extracted light intensity is demonstrated for a blue LED measured at the chip level.
      
Blue LED Excitable Temperature Sensors Based on a New Europium(III) Chelate
      
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ZnSe has the potential to be used to make blue LED because it has wide band gap, and its strong blue exciton luminescence is observed even at the room temperature. The main obstruction in practice is that the p-type ZnSe with low resistivity is difficult to produce due to self-compensation. It seems that the self-compensation effect is related to the native defects originating in nonstoich-iometry during crystal growth. The two electron traps which are located at 0.30 and 0.33eV (labeled as A and...

ZnSe has the potential to be used to make blue LED because it has wide band gap, and its strong blue exciton luminescence is observed even at the room temperature. The main obstruction in practice is that the p-type ZnSe with low resistivity is difficult to produce due to self-compensation. It seems that the self-compensation effect is related to the native defects originating in nonstoich-iometry during crystal growth. The two electron traps which are located at 0.30 and 0.33eV (labeled as A and B thereafter) below conduction band are commonly observed in ZnSe. Some authors suggested that these traps be associated with Se vacancies.In search of the nature of these two traps, Se ion implantation into unintentionally doped .ZnSe was carried out. The implanting energy of 180keV, dose of 1×1014cm-2, and the target temperature of 77K were used. .For comparison, another ZnSe sample was implanted with Kr+ under similar conditions.The post-annealing was carried out a: 350℃ for 20min. A Si3N4 layer of 2500A was formed on the top of the sample before annealing.After annealing Au/ZnSe -Schottky barrier was made on the implanted layer for deep level transient spec-troscopy(DLTS) measurement. The sample conditions and concentration ND of the net donor are given in Table 1.Fig.1 shows the DLTS spectrum of ZnSe samples. Fig.2 shows the thermal emission rates as a function of reciprocal temperature for four electron traps measured by DLTS. The apparent thermal activation energy Ea and concentration N, of the deep levels observed in the samples were determined and presented in Table 2. The centre B disappeared after Se+ implantation, and centre A disappeared after annealing. A new centre C Was induced by Se+ implantation. The electron capture cross section of the centre C is, much larger than that of centre B.The results presented above can be explained as follows. During the implantation (with Se+ or Kr+), plenty of Se vacancies and Se interstitials was produced by ion collisions. As temperature is raised to room temperature, the samples experienced a partly annealing, especially for Se vacancies. Most of Sc vacancies produced during the implantation combined to form Se divacancies or recombined with Se interstitials. Then after returning to room temperature, single Se vacancies should not exsist at all, but the existence of Se divacancies is still plausible. After annealing, the empty lattice sites in Se divacancies could be occupied by Se interstitial, considering the fact that there were a lot of excess Se in Se+ implanted sample. So the concentration of Se divacancies is reduced obviously. Therefore, it is reasonable to relate the trap B to a complex involving a single Se Vacancy, and the trap A to Se divacancies. The results obtained provide a piece of moie direct experimental evidence for Besomi's argument.The nature of the centre C is probably related to Se interstitial whereas centre D probably is due to the irradiation damage.

将Se离子注入到ZnSe晶体中,用深能级瞬态谱仪(DLTS)测量了注Se~+前后ZnSe晶体中深能级的变化,发现在ZnSe中经常出现的分别位于导带下0.30eV和0.33eV的两个能级在注Se~+和退火后消失。这个结果进一步证实了Beomi等人提出的以上两个能级分别与Se双空位和包含一个Se单空位的复合体有关的论点。同时注Se~+后在导带下0.34eV出现一个新的能级,其电子俘获截面明显区别于0.33eV能级。该能级可能与Se填隙原子或占Zn位的反位Se原子有关。

This paper reports material, device, structure, characteristics and application for InGaN ultrahigh brightness blue LED.The newly developed diode has a peak wavelength of 450 um.External quantum efficiency is 2.7%.At a forward current of 20 mA, the brightness reaches 1.2 cd, the forward voltage drop is 3.6 V.Compared with commercially available blue LEDs, brightness performance is 100 times better.The candela-class ultrahight brightness blue LED paves the way for outdoor full-color LED display...

This paper reports material, device, structure, characteristics and application for InGaN ultrahigh brightness blue LED.The newly developed diode has a peak wavelength of 450 um.External quantum efficiency is 2.7%.At a forward current of 20 mA, the brightness reaches 1.2 cd, the forward voltage drop is 3.6 V.Compared with commercially available blue LEDs, brightness performance is 100 times better.The candela-class ultrahight brightness blue LED paves the way for outdoor full-color LED display panels.

从材料、器件、结构、特性及其应用等方面介绍了InGaN超高亮度蓝色发光二极管。这种器件峰值波长为450um,外量子效率是2.7%。在正向电流20mA时,亮度达1.2cd,正向压降为3.6V,比市售的其它蓝色发光二极管的亮度提高100倍,其在室外全色显示方面具有广阔的应用前景。

Silicon carbide is one of main blue-light emitting semiconductor materials,and the SiC blue LED has been developed and commercialized. The radiant wavelength of the SiC product peaks at 470 nm, while the radiant flux is 18μW under the condition of V=3. 0 V, I=20 mA, and 36μW under the condition of V=3. 0 V, I=50 mA. Recent investigations show that the blue LED made up of (SiC)1-x.(GaN)x alloy has high luminous efficiency,and the radiant fulx is 850 mW.In this paper, the research progress of...

Silicon carbide is one of main blue-light emitting semiconductor materials,and the SiC blue LED has been developed and commercialized. The radiant wavelength of the SiC product peaks at 470 nm, while the radiant flux is 18μW under the condition of V=3. 0 V, I=20 mA, and 36μW under the condition of V=3. 0 V, I=50 mA. Recent investigations show that the blue LED made up of (SiC)1-x.(GaN)x alloy has high luminous efficiency,and the radiant fulx is 850 mW.In this paper, the research progress of the SiC material,device and technology, especially for the blue LED application are reviewed.

碳化硅(SiC)是目前主要的蓝光半导体材料之一,国际上已初步实现了SiC蓝光发光二极管的产业化。目前商品器件工作电压3.0V,工作电流20mA时,发射波长470nm,功率18μW,工作电流50mA时,辐射功率可达36μW。最近的实验研究发现,采用SiC和氮化镓的合金制成的LED可大幅度提高发光效率,其发射功率的实验室水平已达850mW。文中从SiC材料特性、SiC发光器件及SiC材料、器件工艺等几方面入手,综述了SiC作为蓝光半导体材料及其器件和工艺的研究进展。

 
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