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burnout
相关语句
  烧毁
    Experimental Analysis of the Energy Burnout Property for the Low Noise AI-Gate MESFET
    低噪声铝栅MESFET能量烧毁性质的实验分析
短句来源
    Investigation of burnout mechanism in microwave GaAs power FETs:PartⅠ.D.C. burnout
    微波GaAs功率场效应晶体管烧毁机理的研究:Ⅰ.直流烧毁
短句来源
    Investigation of burnout mechanism in microwave GaAs power FETs:Part Ⅱ.RF hurnout
    微波GaAs功率场效应晶体管烧毁机理的研究:Ⅱ.射频烧毁
短句来源
    ASPECT OF FAILURE OF SOURCE-DRAIN BURNOUT FOR GaAs MESFET BY SEM AND SAM
    GaAs功率场效应管失效中源一漏烧毁现象的SEM/SAM研究
短句来源
    PSPICE Simulation for Single Event Burnout of Power MOSFETs
    功率MOS器件单粒子烧毁效应的PSPICE模拟
短句来源
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  “burnout”译为未确定词的双语例句
    This paper studied the burnout mechanism of PN junction under the highpower microwave (HPM) . One-dimensional PN junction transient operation ofsemiconductor devices is set up.
    本文研究PN结半导体器件在高功率微波(High Power Microwave,HPM)激励下的损伤机理,建立起PN结稳态和瞬态行为的一维模型。
短句来源
    Studying burnout mechanism of HPM,analyzing the semiconductor’s representative effect of HPM,evaluating impact of HPM,supplying the basis for design and research of High Power equipment.
    通过高功率微波干扰机理的研究,进行大功率微波对典型半导体部件作用的分析技术,确定高功率微波干扰效能评估体系和方法。 为大功率干扰机的总体设计与研制提供重要的理论依据和实验数据。
短句来源
    Usually, two ways can make certain burnout parameter of HPM, one of them is test research,other is theory research.
    通常,确定HPM参数对半导体器件的干扰及损伤阈值的影响可以通过试验研究和理论研究的方法。
短句来源
    First , This paper explain the mechanism of generating high power microwave(HPM)and the importance ,development of HPM, then analysis the physical mechanism of semiconductor device’s burnout in environment of HPM.
    本文首先阐述了HPM武器的重要性、发展及HPM的产生机理,然后对半导体器件HPM毁伤阈值及损伤机理进行了分析,大多数半导体器件的基本组成为PN结二极管,所以最后进行了PN结建模仿真、HPM阈值分析。 本文的主要工作在以下几方面:首先,对HPM的产生机理及HPM武器的发展、重要性做了详细的论述。
短句来源
    studied the burnout mechanism of PN junction under the high power microwave(HPM).
    对HPM的产生机理及HPM产生系统进行了总结。
短句来源
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  burnout
Using a test rig with a capacity of 640 MJ/h with an absolute milling system and flue gas online analysis system, characteristics such as burnout, slag, and pollution of some blended coals were investigated.
      
Results of the experiments are given in which optical methods are used to investigate the pattern of hydrogen burnout in the case of burning in a cocurrent supersonic off-design (overexpanded) air jet.
      
A mechanism is proposed for the growth of an initial macroscopic crack in which cavities, microcracks, and macrocracks formed as a result of the heating and burnout of absorbing inclusions combine with the initial crack.
      
The temperature at which the drops take a completely spherical shape correlates with limit superheat temperatures under quasi-static conditions, suggesting dynamic burnout.
      
Burnout during upward flow of steam-water mixture through vertical tubes with spiral inserts
      
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The research of the accelerated life test under the high temperature and fixed bias. for the medium power GaAs microwave FETs shows that MTTF of the devices at 70℃ ambient temperature exceeds 7.3×l05 hours, comparable to that of devices (1×106 hours) made in other countries; and it also reveals three initial failure modes: gate-source burnout, saturation drain current reduction aad gate-source breakdown voltaga reduction. Based on the results of the accelerated life tests, two optimum screening conditions...

The research of the accelerated life test under the high temperature and fixed bias. for the medium power GaAs microwave FETs shows that MTTF of the devices at 70℃ ambient temperature exceeds 7.3×l05 hours, comparable to that of devices (1×106 hours) made in other countries; and it also reveals three initial failure modes: gate-source burnout, saturation drain current reduction aad gate-source breakdown voltaga reduction. Based on the results of the accelerated life tests, two optimum screening conditions have been presented to achieve 250-hours (LTPD of 20%) and 500 hours (LTPD of 15%)operation life test at room temperature. The results prove that the proposed screening conditions are valid.

对WC55中功率微波砷化镓场效应晶体管进行的高温固定偏置加速寿命试验研究表明:该器件在70℃环境温度下的MTTF达7.3×10~5小时以上,已接近国外类似器件的可靠性水平;同时还揭示出器件早期失效模式有栅源烧毁、饱和漏电流下降及栅-源击穿电压降低等三种.根据加速寿命试验结果,提出了器件通过室温250小时LTPD为20%的工作寿命试验和500小时LTPD为15%的工作寿命试验的两种最佳筛选条件.室温工作寿命试验结果证明所提出的筛选条件是合理的.

Si UHF mixer diodes are used in all-channel TV sets. This paper analyses the principal parameters of this diode: The height of barrier, conversion loss, and burnout energy. The fabrication technique is described. Finally, the research and application results are given and compared with analogical products made in Japan.

硅UHF混频二极管用于全频道电视机.本文分析了UHF混频二极管的势垒高度、变频损耗和抗烧毁能量等主要参数,概述了制造技术.最后,给出研究和使用结果,并与日本同类产品作了比较.

The experimental analysts of the energy burnout property for Al-gate MESFET has been made in this paper. The device damage has been investigated in the case of positive and negative pulse and other operating conditions. 0.92-3.5erg ranges of the device burnout energy are obtained from the experimental results, showing fairly anti-burnout performance of the Al-gate GaAs MESFET.

本文对铝栅GaAs MESFET的能量烧毁性质作了实验分析.研究了在正脉冲、负脉冲以及各种工作状态下器件的损害情况.实验结果表明,脉冲峰值电压约为30伏时,器件的烧毁能量值集中在0.92至3.6尔格范围内,这表明铝栅GaAs MESFET有较好的抗烧毁性能.

 
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