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light transmittance     
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  透光率
    The effects of O 2 concentration during reactive sputtering and annealing atmosphere after sputtering on resistivity and visible light transmittance,and the effect of square resistance on reflectivity and transmittance of microwaves have been studied.
    研究了反应溅射时氧浓度、溅射后退火气氛对电阻率和透光率的影响; ITO膜方块电阻对微波反射率和透射率的影响
短句来源
  透光性
    There are some reports that h-BN have a high sound wave transmission velocity and excellent light transmittance. That's means that it's a good candidate for surface acoustic wave device substrate.
    有报道表明h-BN还具有高声波传输速率和优良的透光性是作为表面声波(SAW)器件基体的合适材料。
短句来源
  光透过率
    Investigation of SnO_2 Membrane for Principle of Light Transmittance and Gas Sensitivity
    SnO_2薄膜光透过率气体敏感机理的研究
短句来源
    Visible light transmittance of the obtained film was over 85%, and its conductivity reached 100~101 S·cm-1. The effect of content of PANI on viscosity of dipping solution, structure, transmittance and conductivity of the hybrid films was investigated.
    薄膜的可见光透过率为85%以上,电导率达到100~101S·cm-1.研究了聚苯胺含量的变化对浸涂液粘度、薄膜结构、光透过率、电导率的影响.
短句来源
    The structure,composition,phase-transition temperature,magnitude of the abrupt electrical resistance change and the light transmittance before and after phase-transition of the doped thin films were tested by XRD and XPS methods.
    实验采用XRD和XPS等研究手段 ,对掺杂薄膜的物相组成、价态、相变温度、电阻突变量级和相变前后的光透过率进行了测试。
短句来源
  “light transmittance”译为未确定词的双语例句
    But the maximum visible light transmittance of the sample, prepared with SiO_2 sol catalyzed by NH_3·H_2O, attains 99.2% at wavelength 520nm and was higher than the other kind of sample.
    NH3·H2O催化SiO2溶胶制备的SiO2光学增透膜使基片在波长为520nm处透过率达到99.2%,相对于HCl与NH3·H2O分步催化制备的薄膜强,但薄膜的耐刮伤能力较相对较差。
短句来源
    To find the parameters of preparation and annealing process associated with the best electrochromic properties of these films, following researches and experiments were carried out: to compare the visible light transmittance of the colored state with bleaching state of the electrochromic filmswhich were annealed at different temperatures and for different duration, to count the dynamic optical density change, and to test the I-V relations of these films' electrochromic cycles and their colored/bleaching response time.
    对经过不同热处理温度和不同热处理持续时间得到的薄膜样品的着色/褪色可见光范围内透射光谱的比较,计算薄膜动态光密度变化量的大小,测试薄膜着色/褪色循环伏-安关系以及薄膜着色/褪色响应时间的快慢,寻求到薄膜呈现最佳电致变色性能时所对应的制备参数与热处理参数。
短句来源
    Researches on the Glass/ITO/WO3/LiNbO3/NiOx/Au all solid-state smart window were referred to the effect of each film's thickness on the device's electrochromic properties. Through the test of the visible light transmittance of the colored state and bleaching state of the device, it proved good electrochromic capabilities with the dynamic optical density changed between 0.2-0.5.
    并在此基础上继续研究了Glass/ITO/WO_3/LiNbO_3/NiO_x/Au结构的全固态智能窗器件模型,对于各薄膜层厚度对于器件电致变色性能的影响做了初步的研究,测试了器件可见光范围内的着色/褪色透射光谱,光密度变化量在0.2~0.5范围内,表明器件具有良好的电致变色性能。
短句来源
    And according to the relationship of impurity and water on the surface of samples and light transmittance,we also analysis the function to clean impurity and water of plasma cleaning.
    利用溶剂和杂质对激光透过率的关系,分析等离子体对溶剂和杂质的清除作用。
短句来源
    The optical tests of these thin films shows that the dense smooth and homogenous microstructure also have a positive effect on the film visible light transmittance performances, the films grown in the above situation could reach the visible light transmittance as high as over 80%.
    通过对紫外-可见光谱的分析,发现ZnO薄膜的可见光区的透过率同ZnO的微观结构变化有关。 在450℃到500℃,0.3M前驱体溶液浓度下制备出的薄膜均匀致密同时也具有良好的可见光透过率,可以达80%以上。
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  light transmittance
The optimum TCE reduction efficiency exhibits at εs/εg of 0.48, annulus gap of 8 mm and UV light transmittance around 0.20.
      
Point of care methods, which have correlated results with the standard light transmittance aggregometry may be appropriate choices in the detection of platelets' response to antiplatelet therapy.
      
The visible light transmittance of the colored glass plates was controlled in the relatively wide range of 50-90% by changing the film thickness or the colorant concentration in the coating sols.
      
A maximal improvement of the abrasion resistance is achieved when 23 wt% SiO2 is incorporated (EBC80/60Si, EBC284/60Si) with only 20% decrease in light transmittance.
      
Gradual elimination of inter-grain pores during sintering was associated with the increase of light transmittance.
      
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A process used to prepare ITO transparent conducting films on inorganic glass substrates by d.c. reactive magnetron sputtering is presented. The resistivity,visible light transmittance,reflectivity and transmittance to perpendicularly incidenting microwaves of the film have been measured.The effects of O 2 concentration during reactive sputtering and annealing atmosphere after sputtering on resistivity and visible light transmittance,and the effect of square resistance on reflectivity and...

A process used to prepare ITO transparent conducting films on inorganic glass substrates by d.c. reactive magnetron sputtering is presented. The resistivity,visible light transmittance,reflectivity and transmittance to perpendicularly incidenting microwaves of the film have been measured.The effects of O 2 concentration during reactive sputtering and annealing atmosphere after sputtering on resistivity and visible light transmittance,and the effect of square resistance on reflectivity and transmittance of microwaves have been studied.

研究了用直流反应磁控溅射法在无机玻璃基片上制备ITO透明导电膜的工艺;测试了膜的电阻率、对可见光的透射率及对垂直入射微波的反射率和透射率;研究了反应溅射时氧浓度、溅射后退火气氛对电阻率和透光率的影响;ITO膜方块电阻对微波反射率和透射率的影响

The SnO 2 thin film was prepared by means of RF-PECVD and its stoichiometric relation is calculated by XPS. Its optical and electric heating properties are measured. The results indicate that this conducting SnO 2 thin film is a kind of non-stoichiometric n-type oxide semiconductor and SnO 2 thin film has high visible light transmittance and good electric heating properties.

利用 X P S 研究了 R F- P E C V D 制备的 Sn O2 薄膜的化学计量配比,测试了 Sn O2 薄膜的光学和电加热特性. 结果表明:具有导电性能的 Sn O2 薄膜是一种非理想化学计量配比的氧化物半导体薄膜材料,薄膜还具有较高的可见光透过率和较好的电加热性能.

In this paper,using V 2O 5 and MoO 3 powders as starting materials,a novel preparing method,so called inorganic sol-gel,was developed to synthesize Mo 6+ doped vanadium dioxide (VO 2) thin films.The structure,composition,phase-transition temperature,magnitude of the abrupt electrical resistance change and the light transmittance before and after phase-transition of the doped thin films were tested by XRD and XPS methods.The results showed that the main component of the doped thin films was VO 2,the...

In this paper,using V 2O 5 and MoO 3 powders as starting materials,a novel preparing method,so called inorganic sol-gel,was developed to synthesize Mo 6+ doped vanadium dioxide (VO 2) thin films.The structure,composition,phase-transition temperature,magnitude of the abrupt electrical resistance change and the light transmittance before and after phase-transition of the doped thin films were tested by XRD and XPS methods.The results showed that the main component of the doped thin films was VO 2,the structure of MoO 3 doped thin films didn't change,and phase-transition temperature of the doped thin films was obviously lowered with the increase of MoO 3 doped content,but magnitude of the abrupt electrical resistance change and the abrupt change of light transmittance were also decreased,of which the abrupt electrical resistance change was more distinct.However,so far as the doped content of MoO 3 is less than 5%,magnitude of the abrupt electrical resistance change of the doped thin films can reach 2 orders,and the abrupt change of light transmittance before and after phase-transition can still keep preferably. The analysis showed that MoO 3 can dissolve in VO 2,and then reduce forbidden band's width of VO 2 as the donor,therefore,change its optical and electrical properties.

本文采用V2 O5粉和MoO3 粉为原料 ,通过无机溶胶 -凝胶法制备掺Mo6+ 的VO2 薄膜。实验采用XRD和XPS等研究手段 ,对掺杂薄膜的物相组成、价态、相变温度、电阻突变量级和相变前后的光透过率进行了测试。结果发现 :所制备的掺杂薄膜其主要成份是VO2 ,掺入的MoO3 结构未发生改变 ,掺杂薄膜随MoO3 含量的增加其相变温度明显下降 ,但其电阻突变量级和光透过率的突变量亦随之降低 ,其中 ,电阻突变量级的下降趋势更显著 ,不过只要MoO3 掺杂量不高于 5 %时 ,掺杂薄膜的电阻突变仍可保持 2个量级以上 ,而且红外光透过率的突变量仍保持较高。分析认为 ,薄膜中掺入的MoO3 与VO2 可以互溶 ,从而可作为施主组元降低VO2 能带结构中的禁带宽度 ,改变其光电特性。

 
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