助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   epitaxial method 的翻译结果: 查询用时:0.184秒
图标索引 在分类学科中查询
所有学科
更多类别查询

图标索引 历史查询
 

epitaxial method
相关语句
  外延生长法
     The experiment and the properties of InGaAsP/InP double-heterostructure grownby the combined vapor-phase and liquid-phase epitaxial method are reported.
     本文描述以液相外延和汽相外延相结合的混合外延生长法研制1.5μm波长InGaAsP/InP双异质结材料的实验,并分析其测试结果。
短句来源
  “epitaxial method”译为未确定词的双语例句
     This paper describes an n+-p InSb/Hg1-xCdxTe heterojunction prepared by using liquid-phase epitaxial method.
     本文报道用水平滑舟系统液相外延制备n~+InSb/PHg_(1-x)Cd_(?)
短句来源
     Single transverse-mode and single longitudinal-mode stabilized A1_π Ga_1-xAs CSP visible semiconductor laser is fabricated by means of liquid phase epitaxial method at the temperature of 780℃. The wavelength is 7500?
     采用低温780℃液相外延制成了稳定单横模、单纵模工作的Al_xGa_(1-x)As CSP可见光半导体激光器,波长7500A.
短句来源
     A hot-wall epitaxial method was used to grow n-GaN crystals on Si substrates,and ohmic contacts were realized by depositing Ti/Al electrodes on them.
     采用热壁外延的方法在硅衬底上生长出n-GaN晶体,制成了Ti/Al双层电极的欧姆接触。
短句来源
     Improved Two-step Silicon Epitaxial Method Reducing Autodoping Effect
     减小硅外延自掺杂影响的改进的二步外延法
短句来源
     This article narrated several kinds of manufacture plan of zener diode, the key research are to realize the PN junction series combination of multilayer mesa structure by epitaxial method, to achieve the goal of the temperature coefficient compensation mutually of forward PN function and reverse PN function and Cause the zener diode's regulated voltage value V_Z to maintain relatively constant along with the temperature change.
     本文叙述了制造稳压二极管的几种方案,重点研究以外延方式实现多层台面结构的PN结串联组合,达到正向pn结与反向pn结的温度系数相互补偿的目的,使其稳定电压值V_z随着温度的变化而相对保持稳定。
短句来源
更多       
  相似匹配句对
     [method]
     【内容及方法】
短句来源
     The method for
     最后结合实例进行计算,数值解验证了本文方法的有效性。
     Determination of x, y Values in Epitaxial Layer by Photmetric Method
     分光光度法测定Ga_xIn_(1-x)As_(1-y)P_y外延层中x,y值
短句来源
     The Preparation of Epitaxial Silicon Film on Czochralski Method Spinel
     在直拉法尖晶石上外延硅膜的研制
短句来源
查询“epitaxial method”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法,我们为您准备了出自英文原文的大量英语例句,供您参考。
  epitaxial method
In particular, we report results on Ge-doped GaAs and Alx Ga1-x As, Sn-doped AlxGa1-x As and Si-Te-doped GaAs single crystal layers which were grown on GaAs substrates by the liquid phase epitaxial method.
      
YIG films, substituted with Bi, Ti, Ga and La, were grown on a (111) plane of Gd3Ga5O12 or (Gd, Ca)3(Ga, Mg, Zr)5O12 by a liquid phase epitaxial method.
      
For observation of the Tl impurity state, tunneling spectroscopy was carried out on the Pb(Tl)Te films grown by the hot-wall epitaxial method (HWE), and succeeded in the detection of two quasilocal impurity levels.
      


The experiment and the properties of InGaAsP/InP double-heterostructure grownby the combined vapor-phase and liquid-phase epitaxial method are reported.

本文描述以液相外延和汽相外延相结合的混合外延生长法研制1.5μm波长InGaAsP/InP双异质结材料的实验,并分析其测试结果。

This paper describes an n+-p InSb/Hg1-xCdxTe heterojunction prepared by using liquid-phase epitaxial method. The growing system used consists of a horizontal slider boat in the open-tube filled with H2. Growth temperature is between 300-400℃ and cooling rate is slower than 8℃/min. The grown film has a mirror-like surface with a thickness of l5-25μm. EDAX-SEM analysis shows that the interface between layer and substrate is straight and the compositional transition is very sharp. Infrared detectors of both...

This paper describes an n+-p InSb/Hg1-xCdxTe heterojunction prepared by using liquid-phase epitaxial method. The growing system used consists of a horizontal slider boat in the open-tube filled with H2. Growth temperature is between 300-400℃ and cooling rate is slower than 8℃/min. The grown film has a mirror-like surface with a thickness of l5-25μm. EDAX-SEM analysis shows that the interface between layer and substrate is straight and the compositional transition is very sharp. Infrared detectors of both 3-μm and 8-14μm can be made of this material. The response wavelength of the detector depends upon the x value in Hg1-xCdxTe (x = 0.3 for λ= 3 - 5μm while x = 0.2 for λ = 8 - 14 μm). For a detector element about 1mm in diameter, Dlb+≥l E10 cm Hz1/2/W at 77K(3-5 μm), Ro>10kΩ. Therefore, this new material is also a prominent candidate for infrared focal plane arrays.

本文报道用水平滑舟系统液相外延制备n~+InSb/PHg_(1-x)Cd_(?)Te异质结.该异质结外延层厚度在15~25μm之间,由电镜扫描分析出外延层和衬底之间的介面平直,组分过渡很徒.采用该异质结能制备3~5μm(x=0.3)、8~14μm(x=0.2)两波段的红外探测器,从介绍的单元器件的性能来看,该材料是红外焦平面列阵研究方面极有希望的膺选对象.

Single transverse-mode and single longitudinal-mode stabilized A1_π Ga_1-xAs CSP visible semiconductor laser is fabricated by means of liquid phase epitaxial method at the temperature of 780℃.The wavelength is 7500?.The four-layer leaky waveguide mechanism is analyzed by perturbation method also.

采用低温780℃液相外延制成了稳定单横模、单纵模工作的Al_xGa_(1-x)As CSP可见光半导体激光器,波长7500A.并用微扰法计算和分析了四层漏波导结构.

 
<< 更多相关文摘    
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关epitaxial method的内容
在知识搜索中查有关epitaxial method的内容
在数字搜索中查有关epitaxial method的内容
在概念知识元中查有关epitaxial method的内容
在学术趋势中查有关epitaxial method的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社