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epitaxial
相关语句
  外延
     Photoluminescence ofHg_(1-x)Cd_xTe/Cd_(1-y)Zn_yTe Epitaxial Films Grown by MOCVD
     MOCVD外延Hg_(1-x)Cd_xTe/Cd_(1-y)Zn_yTe薄膜的光致发光
短句来源
     Transport properties of La_(1-x)Ca_xMn_(1.03)O_3 epitaxial thin films
     La_(1-x)Ca_xMn_(1.03)O_3外延薄膜的输运性质
短句来源
     Fabrication of Epitaxial La-Sr-Co-O/Pb-Zr-Ti-O/La-Sr-Co-O Heterostructure on Si Wafer
     硅基外延La-Sr-Co-O/Pb-Zr-Ti-O/La-Sr-Co-O异质结的制备
短句来源
     SiO_x Mediated Epitaxial Ternary Silicide (Co_(1-x)Ni_x)Si_2
     SiO_x调制的三元硅化物(Co_(1-x)Ni_x)Si_2外延
短句来源
     Fabrication and Investigation of Epitaxial Pb-Zr-Ti-O/Y-Ba-Cu-O Heterostructure
     外延Pb-Zr-Ti-O/Y-Ba-Cu-O异质结的制备研究
短句来源
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  外延生长
     EPITAXIAL GROWTH OF La_(1.85)Sr_(0.15)CuO_4,La_2CuO_4,Nd_(1.85)Ce_(0.15)CuO_4 and Pr_2CuO_4 THIN FILMS ON SrTiO_3,LaAlO_3,Y-ZrO_2 SUBSTRATES
     在SrTiO_3、LaAlO_3和Y-ZrO_2衬底上外延生长La_(1.85)Sr_(0.15)CuO_4、La_2CuO_4和Nd_(1.85)Ce_(0.15)CuO_4、Pr_2CuO_4薄膜
短句来源
     Investigation on interface structure of Ba_(0.7)Sr_(0.3)TiO_3/YBa_2Cu_3O_(7-δ) epitaxial films on (001) SrTiO_3 substrate
     (001)SrTiO_3衬底上的Ba_(0.7)Sr(0.3)TiO_3/YBa_2Cu_3O_(7-δ)外延生长薄膜的界面结构研究
短句来源
     A Epitaxial Technology for Si_(1-x)Ge_x/Si Materials
     Si_(1-x)Ge_x/Si材料外延生长技术
短句来源
     Epitaxial growth of Hg_(0.7)Cd_(0.3)Te by laser-assisted deposition
     激光蒸发淀积的Hg_(0.7)Cd_(0.3)Te外延生长
短句来源
     Epitaxial Growth of Er_2O_3 Films by MBE
     电子束外延生长Er_2O_3单晶薄膜
短句来源
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  “epitaxial”译为未确定词的双语例句
     Study on Epitaxial YBa_2Cu_3O_(7-x) Thin Film Deposited on (1120) Sapphire with YSZ Buffer Layer
     Study on Epitaxial YBa_2Cu_3O_(7-x) Thin Film Deposited on (1120) Sapphire with YSZ Buffer Layer
短句来源
     Raman Study of Defects in SI-GaAs and Se-doped Epitaxial Layer Irradiated by 10 MeV Electrons
     Raman Study of Defects in SI-GaAs and Se-doped Epitaxial Layer Irradiated by 10 MeV Electrons
短句来源
     Epitaxial Growth of YBCO Thin Films on LaAlO_3 Substratewith CeO_2 Buffer Layer
     Epitaxial Growth of YBCO Thin Films on LaAlO_3 Substrate with CeO_2 Buffer Layer
短句来源
     Epitaxial Growth of YSZ as Buffer Layers for High T c Superconducting Films on Si Substrates
     Epitaxial Growth of YSZ as Bufer Layers for High Tc Superconducting Filmson Si Substrates
短句来源
     Liquid Phase Epitaxial Growth of In_(0.53)Ga_(0.47) As
     In_(0.53)Ga_(0.47)As的液相外延生长
短句来源
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  epitaxial
Ribbon epitaxial substrates made of Ni-Pd and Ni-W-Pd alloys for second-generation high-temperature superconductors
      
An X-ray epitaxial film interferometer as a tool for studying the structure of a semiconductor heterosystem
      
An X-ray epitaxial film interferometer is described that makes it possible to measure the deflections of the atomic planes of a film, which are parallel to the interface, with a sensitivity of several tenth of an angstrom.
      
The device was used for growing epitaxial Si layers with an Er concentration of 5×1018-1021 cm-3.
      
Heavy charged particle detectors based on high-resistivity epitaxial silicon layers
      
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Measurements of electrical properties using the Van der Pauw technique have been made on the n-type and p-type silicon carbide single crystals and epitaxial layer having resistivity from 10-3 to 102 ohm-cm. Experiments on the selection of measuring conditions and comparison between the Van der Pauw method and the conventional method have been performed. It is found that the magnitude and stability of contact resistance greatly affect the measuring results. Among the pressure contacts studied, indium contact...

Measurements of electrical properties using the Van der Pauw technique have been made on the n-type and p-type silicon carbide single crystals and epitaxial layer having resistivity from 10-3 to 102 ohm-cm. Experiments on the selection of measuring conditions and comparison between the Van der Pauw method and the conventional method have been performed. It is found that the magnitude and stability of contact resistance greatly affect the measuring results. Among the pressure contacts studied, indium contact has the lowest contact resistance, while copper, tin, and phosphor-bronze contacts must be electrically formed before use. With different electrode materials and sample currents, the deviation of values obtained is about 2%. It is suggested that the sample current should be chosen in accordance with the resistivity and contact resistance of the specific sample. As compared with the conventional method, the Van der Pauw method can give higher precision and reproducibility. High temperature electrical properties of silicon carbide single crystals have been measured in a temperature range from room temperature to 1000 K, and the ionization energy of nitrogen donors is found to be 0.056 eV. Anomalous phenomena that result in experimental errors and their origins are discussed.

应用范德保法测量了电阻率在10~(-3)—10~2欧姆·厘米范围的n型和p型碳化硅单晶和外延层的电学性质。进行了测定条件的选择,范德保法与普通法的对照等试验。发现接触电阻的大小和稳定程度对测量结果有极大的影响。在铟、紫铜、锡、磷铜等机械接触中,铟电极具有最低的接触电阻,其他电极须经电冶成方能进行测定。在不同的电极材料和样品电流下,电阻率偏离约2%,指出,样品电流应当根据具体样品的电阻率和接触电阻加以选择。与普通法比较,范德保法精确度高,数据重复性好。测量了自室温至1000°k范围内碳化硅单晶的高温电学性质,求得氮施主的电离能为0.056电子伏。讨论了引起实验误差的一些异常现象及其产生原因。

This paper reports the preparation and properties of the epitaxial Si-film on (100) spinel grown by Czochralski method, the electrical properties of n-type doped film are good. It does not degrad after thermal oxidation treatments, The Hall mobility is 300cm2/volt. sec. (the highest 350). The carrier concentration is kept at 10 15 -10 16/cm3. The film thickness is 1-2 u.

本文叙述了在直拉法生长的尖晶石上外延硅膜的制备与性质。已在直拉法尖晶石 (100)面衬底上生长出一批电学性能较好的N型单晶硅膜,并进行了热氧化稳定性试 验,N型掺杂的硅膜其霍尔迁移率一般在300厘米2/伏·秒左右.最高达380厘米2/伏 ·秒。载流子浓度控制在 1015~1016/厘米3硅膜厚度在 1—2微米。

This paper reports the preparation and properties of the epitaxial Si-film on (100) spinel grown by Czochralski method, the electrical properties of n-type doped film are good. It does not degrad after thermal oxidation treatments, The Hall mobility is 300cm2/volt. sec. (the highest 350). The carrier concentration is kept at 1015-1016/cm8. The film thickness is 1-2 μ.

本文叙述了在直拉法生长的尖晶石上外延硅膜的制备与性质。已在直拉法尖晶石(100)面衬底上生长出一批电学性能较好的N型单晶硅膜,并进行了热氧化稳定性试验,N型掺杂的硅膜其霍尔迁移率一般在300厘米~2/伏·秒左右,最高达380厘米~2/伏·秒。载流子浓度控制在10~15~10~16/厘米~3硅膜厚度在1~2微米。

 
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