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the redistribution
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  再分布
    Numerical solution to the concentration dependent diffusion equation has been developed to study the redistribution of two-dimensional implanted profile in silicon below an ion-etched and a chemically-etched mask edges after thermal treatments.
    本文通过数值方法解浓度相关的扩散方程来研究二维离子注入剖面经热处理后的再分布。 掩模边缘可以是离子或化学刻蚀的,而初始剖面可以是高斯或PearsonⅣ型。
短句来源
    AES and XPS analyses provide depth profile of the diodes, which shows the information of composition changes. The results indicated that the oxidization of TiN film, the redistribution of N in the film, as well as the chemical recombination on TiN/GaAs interface during annealing procedure exert a great influence on the contact characteris tics.
    应用AES与XPS进行肖特基结的表面和界面剖析,发现退火过程中TiN膜的氧化,N在TiN膜中的再分布及TiN-GaAs接触界面上的化学重组对肖特基结的接触特性有重要影响.
短句来源
    The redistribution of Al in gallium diffusion process is particularly considered for diseribing its final profile, whereas a variable diffusion coefficient is employed to discribe Ga profile with higher surface concentration.
    对较低浓度铝的最终分布着重考虑它在扩镓过程中的再分布,而对高浓度镓的最终分布则着重考虑扩散系数的变化。
短句来源
    The redistribution of phosphorus in TiSi_2/n~+ poly-Si polycide structure during heat trea-ment and the reason of its occurrence,as well as its effect on RIE etching process have beenstudied systematically. A way to suppress the out diffusion of phosphorus from high doping po-lysilicon and a suggestion that the patterning of a microstructure should be finished before an-nealing are proposed.
    本文对热处理过程中多晶硅中掺杂磷在 TiSi_2/n+poly-Si复合结构中的再分布行为和产生原因及其对RIE刻蚀的影响进行了系统的研究,提出了抑制高掺杂多晶硅中磷外扩散的方法和微图形成形应在退火前完成的建议.
短句来源
    The results of Van der Pauw Hall measurements and electrochemicalC-V measurements show that rapid thermal annealing is better than conventional furnace an-nealing for improving activation, and coimplantation of P~+ in conjunction with rapid thermalannealing could reduce the redistribution of the implanted Mg species, which would result in agreatly enhanced activation.
    范德堡霍尔方法测量和电化学C-V测量均表明,快速热退火方法优于常规热退火方法,共P~+注入结合快速热退火方法能进一步减小注入Mg杂质的再分布,使电激活率大大提高。
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  “the redistribution”译为未确定词的双语例句
    The improvement of the annealing on the EL2 homogeneity is because the interactive transformation of three excess As forms during annealing resulted to the redistribution of EL2 inNDLECSI GaAs crystal.
    热处理对EL2分布均匀性的改善作用是由于过量As在不同热处理条件下发生不同形式的转化而导致原尘GaAs晶体中EL2的重新分布造成的。
短句来源
    Considering the distortion in the crystal lattice and the redistribution of the electroniccharge densities around the impurity C sites,a C-Si_4 Local Effective Charge Model(LECM) is suggested,and the local mode frequency and the coefficient of total infraredabsorptions are calculated by LECM.
    由于碳杂质周围的晶格畸变和电子电荷密度重新分布感生有效电荷,提出C-Si_4局域有效电荷模型; 计算了由此产生的局域模频率和红外吸收系数.
短句来源
    The redistribution of InAs on the GaAs surface, together with the simultaneous In-Ga alloying controls the formation of quantum rings.
    InAs在GaAs表面的扩散以及同时发生的In-Ga互混控制着InAs量子环的形成。
短句来源
    In calculating high frequency capacitance, the redistribution of minority carriers in the inversion layer is also considered. The C-V measurements are carried out within the frequency range of 20Hz~10MHz and the temperature range of 26~200K.
    对各种组份(x=0.2~0.56)的N型和P型Hg_(1-x)Cd_xTe MIS器件进行了变频(f=20~10MHz)和变温(T=26~200K)C-V测量。
短句来源
    Based on HgTe-CdTe quasi-binaryphase diagram,the redistribution and the diffusion ofsolute during Bridgman single crystal growth ofHg_(1-x)Cd_xTe are discussed.
    本文以HgTe-CdTe伪二元相图为基础,分析了Hg_(1-x)Cd_xTe单晶生长过程中分凝特性及扩散规律。
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  the redistribution
On the other hand, the barrier could be significantly altered by the redistribution of excessive charges in the micrometer long SWCNTs, which have only one layer of carbon atoms.
      
A Study of the Redistribution Conditions of Carbon Black Particles from the Bulk to the Interface in Heterogeneous Polymer Blend
      
The redistribution conditions of carbon black particles to the interface between polymers were studied based on the measurement of the value of superadditive conductivity of several heterogeneous polymer blends filled with powdered carbon black.
      
The redistribution of carbon black from the polymer phase that has low ability to wet the powder proceeds efficiently only to the boundary with polymer having better wetting ability.
      
As the storage time of the system increases, the spectrum of diffusion coefficient values varies, thereby indicating the redistribution of PEG400 molecules in the blend with PVP.
      
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The vibrational behavior of the substitutional carbon in silicon has been examined.Considering the distortion in the crystal lattice and the redistribution of the electroniccharge densities around the impurity C sites,a C-Si_4 Local Effective Charge Model(LECM) is suggested,and the local mode frequency and the coefficient of total infraredabsorptions are calculated by LECM.The theoretical calculations are consistent withthe experimental results obtained by R.C.Newman et al.in 1969.It is shown that theLECM...

The vibrational behavior of the substitutional carbon in silicon has been examined.Considering the distortion in the crystal lattice and the redistribution of the electroniccharge densities around the impurity C sites,a C-Si_4 Local Effective Charge Model(LECM) is suggested,and the local mode frequency and the coefficient of total infraredabsorptions are calculated by LECM.The theoretical calculations are consistent withthe experimental results obtained by R.C.Newman et al.in 1969.It is shown that theLECM is suitable for the crystal dynamics of various substitutional impurities in crys-tals with diamond structure.

本文探讨了代位式碳杂质在硅单晶中的振动行为.由于碳杂质周围的晶格畸变和电子电荷密度重新分布感生有效电荷,提出C-Si_4局域有效电荷模型;计算了由此产生的局域模频率和红外吸收系数.理论计算的结果与R.C.Newman等人的实验结果的一致性,说明局域有效电荷模型适用于处理一些代位式杂质在金刚石结构晶体中的晶格动力学问题.

Numerical solution to the concentration dependent diffusion equation has been developed to study the redistribution of two-dimensional implanted profile in silicon below an ion-etched and a chemically-etched mask edges after thermal treatments. The implanted profile can either be a Gaussian or Pearson Ⅳ distribution. Results show that the lateral extension of boron ions is mainly determined by the initial conditions for a non-ideal masking, it can be as twice wide as that of the vertical direction, however,...

Numerical solution to the concentration dependent diffusion equation has been developed to study the redistribution of two-dimensional implanted profile in silicon below an ion-etched and a chemically-etched mask edges after thermal treatments. The implanted profile can either be a Gaussian or Pearson Ⅳ distribution. Results show that the lateral extension of boron ions is mainly determined by the initial conditions for a non-ideal masking, it can be as twice wide as that of the vertical direction, however, movement of lateral junction depth after a thermal treatment at a temperature lower than 1200℃ for less than 40sec is insignificant, therefore, the lateral junction will remain unchanged for a typical RTA process for the boron implanted sample. However, in the vertical direction, the junction depth will increase about 5% for 30 seconds diffusion at a temperature only 1100℃.

本文通过数值方法解浓度相关的扩散方程来研究二维离子注入剖面经热处理后的再分布。掩模边缘可以是离子或化学刻蚀的,而初始剖面可以是高斯或PearsonⅣ型。结果表明,在非理想掩模条件下,硼离子的侧向扩展主要是由工艺的初始条件所决定。侧向扩展的宽度可达到垂直方向的两倍。但是,对于温度低于1200℃及时间少于40秒的热处理,侧向结深的移动是不明显的,因此对于典型快速热退火,侧向结深基本上保持不变。然而,即使在1100℃,30秒的热扩散,垂直方向的结深却增加了5%。

The C-V characteristics of N-and P- type Hg_(1-x)Cd_xTe (x=0.2~0.56) MIS devices fabricated with double dielectric layers consisting of anodio oxide and ZnS are studied. The nonparabolicity and degeneracy of Hg_(1-x)Cd_xTe conduction band are taken into account in the theoretical treatment based on Kane model. In calculating high frequency capacitance, the redistribution of minority carriers in the inversion layer is also considered. The C-V measurements are carried out within the frequency range of 20Hz~10MHz...

The C-V characteristics of N-and P- type Hg_(1-x)Cd_xTe (x=0.2~0.56) MIS devices fabricated with double dielectric layers consisting of anodio oxide and ZnS are studied. The nonparabolicity and degeneracy of Hg_(1-x)Cd_xTe conduction band are taken into account in the theoretical treatment based on Kane model. In calculating high frequency capacitance, the redistribution of minority carriers in the inversion layer is also considered. The C-V measurements are carried out within the frequency range of 20Hz~10MHz and the temperature range of 26~200K. For Hg_(0.7)Cd_(0.3)Te MIS device, the results at 80K show that the fixed positive charge density is 8~10×10~(11)cm~(-2), slow interfaee trap density 4~10×10~(10)cm~(-2), and minimum fast surface state density 1.72×10~(11)cm~(-2)eV~(-1).

测量了阳极氧化和ZnS双层介质结构的Hg_(1-x)Cd_xTe MIS器件的C-V特性。基于Kane模型并考虑了碲镉汞导带非抛物性和载流子简并效应,进行了理论计算,高频情况下还考虑了少子在反型层中的再分布。对各种组份(x=0.2~0.56)的N型和P型Hg_(1-x)Cd_xTe MIS器件进行了变频(f=20~10MHz)和变温(T=26~200K)C-V测量。对于x=0.3的器件,测得其固定正电荷密度为8~10×10~(11)cm~(-2),80K下慢界面陷阱密度为4~10×10~(10)cm~(-2),最小界面态密度为1.7~2×10~(11)cm~(-2)·eV~(-1)。

 
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