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common-emitter
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  共射
     The device has a 2μm×12μm U-shaped emitter area and demonstrates a peak common-emitter DC current gain of over 300,an offset voltage of 0.16V,a knee voltage of 0.6V,and an open-base breakdown voltage of about 6V.The HBT exhibits good microwave performance with a current gain cutoff frequency of 80GHz and a maximum oscillation frequency of 40GHz.
     成功制作了U型发射极尺寸为2μm×12μm的器件,其峰值共射直流增益超过300,残余电压约为0·16V,膝点电压仅为0·6V,而击穿电压约为6V.器件的截至频率达到80GHz ,最大震荡频率为40GHz .
短句来源
     Comprehensive Analysis and Calculation of Frequency Characteristic of Basic Common-emitter Amplifiers
     基本共射放大器频率特性的分析计算
短句来源
     The common-emitter DC current gain is 100,the offset voltage approximates 0.4V,the knee voltage is about 1.0V,and the open-base breakdown voltage is over 10V.The ideality factors for the base and collector current are 1.16 and 1.11 respectively. These results indicate that the InGaP/InGaAs/GaAs DHBTs are suitable for applications in low power-dissipation and high power.
     其共射直流增益β达到100,残余电压Voffset约为0.4V,膝点电压Vknee约为1V,击穿电压BVceo超过10V,器件的基极和集电极电流理想因子分别为nb=1.16,nc=1.11,可应用于低功耗、高功率领域.
短句来源
     MATHEMATICAL ANALYSIS AND DESIGN OF A LOW-NOISE COMMON-EMITTER UHF TRANSISTOR AMPLIFIERS
     共射UHF低噪声晶体管放大器的数学分析与設計
短句来源
     On the Gain of Small-Signal Common-Emitter Amplifier
     关于小信号共射电路增益的讨论
短句来源
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  “common-emitter”译为未确定词的双语例句
     Based on a 0.35 μm SiGe BiCMOS technology,two types of preamplifier were designed by using common-base and common-emitter plus common-base input stage respectively.
     基于0.35μm SiGe BiCMOS工艺,设计了共基极和共发共基两种输入结构的前置放大器.
短句来源
     In this paper, a high power device is described, which has a breakdown voltage greater than 100V, an Icm greater than 6A, a Pcm greater than 50W and an fT of about 200 MHz. The common-emitter current amplification factor for the device remains almost unchanged when the temperature varies from -55℃ to +150℃.
     本文介绍了一种大功率器件,其耐压大于100V,I_(CM)>6A,P_(CM)>50W,f_T~200MHz,温度从-55℃变化到+150℃时,其共射极电流放大系数几乎不变。
短句来源
     Such MSM structure can also be formed into a transverse phototran- sistor with its common-emitter current gain from 2 to'4.The results show that the MSM structuret is ideal for improving the responsivity of Si-photodetectors.
     这种结构还可以构成横向光晶体管,共发射极电流增益为2~4倍。 实验表明,MSM 结构是改善硅光电探测器光谱响应的良好结构。
短句来源
     The simulation results show that the common-emitter current gain β is 32.4 while the base current I B equals to 1μA/μm with the breakdown voltage BV CEO more than 800V and the cut-off frequency f T close to 1GHz.
     在此基础上对 4H SiCBJT器件进行了模拟研究 . 结果显示 ,器件基极电流IB=1μA/μm时发射极电流增益 β为 32 .4 ,击穿电压BVCEO大于 80 0V ,截止频率fT 接近 1GHZ
短句来源
     Deliberateness on Analysis of Low-frequency Performances of Common-emitter Audio-frequency Amplifier
     共射低频放大电路低频特性分析方法商榷
短句来源
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  相似匹配句对
     THE QUIESCENT STABILITY OF THE COMMON-EMITTER AMPLIFIER
     共发射极放大器的静态稳定性
短句来源
     On the Gain of Small-Signal Common-Emitter Amplifier
     关于小信号共射电路增益的讨论
短句来源
     The Analysis of Two Aspects of the CommonEmitter Circuit
     对共射电路的两点讨论分析
短句来源
     Excepting to the Bootstrap PWR AMP Working in‘Common Emitter
     对自举式功率放大器“共射工作”的再认识
短句来源
     On the Common Enterprise
     共同的事业
短句来源
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  common-emitter
The effect of emitter cap growth conditions on the common-emitter current gain of InGaP/GaAs HBTs, grown by LP-MOCVD, has been studied.
      
Common-emitter and common-collect or type transistorized cascode amplifier for medium frequencies
      
These are quite important, considering that the common-emitter mode is widely used in applications requiring not only switching capability, but also current amplification.
      
Classical designs of optical transimpedance amplifiers for p-i-n photodiode receiver circuits generally employ common-emitter or common-source input stages.
      
It enables one to increase the effective emitter area, which makes for better power-handling and frequency capabilities, radiation hardness, and common-emitter output characteristics.
      
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In this paper the relationships between small-signal h-parameters and elements of the natural equivalent circuit of the common emitter configuration of junction transistors are studied. From experimental results of h-parameters of two typieal alloyed PNP transistors (one 2N104 and one п-6 transistor) the relationship of h-parameters and elements of natural equivalent circuit vs operating frequency and d. c. operating condition (d.c. emitter current and d.e. collector voltage) are evaluated. Results thus obtained...

In this paper the relationships between small-signal h-parameters and elements of the natural equivalent circuit of the common emitter configuration of junction transistors are studied. From experimental results of h-parameters of two typieal alloyed PNP transistors (one 2N104 and one п-6 transistor) the relationship of h-parameters and elements of natural equivalent circuit vs operating frequency and d. c. operating condition (d.c. emitter current and d.e. collector voltage) are evaluated. Results thus obtained ace then compared with results obtained from analysis based on calculations using physical constants of the transistor. The explanation of the behavior of the reverse open-circuit voltage amplification factor, μb0, of the common emitter circuit is given in detail. Characteristics of μbo and properties of h22 (the output admittance with input open) are correlated. This paper gives complete information about h-parameters and natural equivalent circuit of two transistors, serving as an important reference for both device men and research workers on transistor circuits.

本文研究面结合型晶体管共发射极线路的小讯号h参数与自然等效线路中元件的关系。根据两种合金管(2N104及Ⅱ-6晶体管)h参数的实验结果求出h参数与自然等效线路元件随频率及随直流运用状态(直流发射极电流及直流集电极电压)的相互关系。对实验结果与根据晶体管物理构造分析计算的结果进行了比较。对开路反向电压放大系数μ_(bc)的现象给予详细分析,并求出μ_(bc)与开路输出导纳h_(22)的相互关系。两套晶体管的h参数及自然等效线路的完整资料可供晶体管器件设计及线路研究者的使用。

One of the important requirements on oscillators is to have stable frequency of oscillation. The frequency stability problem for vacuum tube oscillators has been extensively in-estigated, however, the same problem for transistor oscillators has not been adequately treated. It is therefore the purpose of this paper to offer a detailed analysis on the frequency stability of transistor feedback oscillators.General equation of oscillations for feedback oscillators are first derived by using the linear analysis based...

One of the important requirements on oscillators is to have stable frequency of oscillation. The frequency stability problem for vacuum tube oscillators has been extensively in-estigated, however, the same problem for transistor oscillators has not been adequately treated. It is therefore the purpose of this paper to offer a detailed analysis on the frequency stability of transistor feedback oscillators.General equation of oscillations for feedback oscillators are first derived by using the linear analysis based on the cascade parameter matrix representation of 2-port networks. Analysis is then applied to the various types of transistor feedback oscillators. Various types of the equivalent circuits for the common-emitter network and various forms of feedback networks using only pure reactive elements are used in deriving the equationsof oscillations. Elements of the feedback networks are assumed to remain unchanged andparameters of the transistor networks are assumed to be varied in the investigation of the frequency drift of transistor oscillators.Feedback networks are grouped into three major groups according to their geometries: the three-arm π configurations, the four-arm and the five-arm configurations. Conditions of oscillations, conditions of frequency stability for oscillators using these groups of feedback networks are discussed and results are summarised into three tables for ready references.

振荡器的一项重要性能是振荡频率的稳定度,对电子管振荡器的频率稳定性能已有比较长时期的研究。然而,对晶体管振荡器频率稳定性能的研究则尚欠完善。本文将对晶体管反馈振荡器的频率稳定性能作比较详细的研讨。 根据四端网络分析及级联参数矩阵表示法,首先推导反馈振荡器的通用振荡方程,然后对共发射极网络的各种等效电路以及对各种纯电抗元件的反馈网络的级联参数进行分析,用这些网络形成各种晶体管反馈振荡器,并推导这些振荡器的振荡方程。根据振荡方程对这些振荡器的振荡性能,包括振荡频率的稳定性能,进行分析及比较。 假设反馈网络所用外加电抗元件固定不变,而晶体管参数改变(包括晶体管的输出输入电阻,输出输入电容,电流放大系数的虚数部分,负载电阻等的改变),对由于这些参数改变所引起的振荡频率漂移作了分析及比较。 根据所用反馈网络的几何构造,将反馈网络分成三臂π形,四臂及五臂网络等三类,对采用这三类网络而组成的晶体管振荡器的振荡性能进行分析,重要结果分别在三表中列出,供研究及设计者参考。

This paper describes a design method of multi-stage transistor intermediate frequency wide band amplifier. The feature of design is the use of network synthesis technique for realizing the amplifier with Tschebyscheff or maximal flatness frequency characteristics. The amplifier itself consists of a cascade of RC neutralized common-emitter stages each with primary tuned interstage transformer. The discussion is divided into three parts. First, the neutralized common-emitter stage is represented by...

This paper describes a design method of multi-stage transistor intermediate frequency wide band amplifier. The feature of design is the use of network synthesis technique for realizing the amplifier with Tschebyscheff or maximal flatness frequency characteristics. The amplifier itself consists of a cascade of RC neutralized common-emitter stages each with primary tuned interstage transformer. The discussion is divided into three parts. First, the neutralized common-emitter stage is represented by approximate unilateral equivalent circuit. Second, the interstage network is analyzed. Expressed the transistor amplifier power gain as a prescribed frequency function, it is possible to derive the limiting constraints for resonant frequencies and Q values of interstage networks, and subsequently to obtain values of circuit elements. These resonant frequencies of interstage networks are not tuned to the center frequency, but distributed at certain frequencies of the transmission band. Finally one design example is presented.

本文叙述一种多级中频宽带晶体管放大器的设计方法,其特点是利用网络综合技术,使放大器的通频带具有契伯舍夫或最大平直型式的特陆曲线。放大器由中和了的共发射极级链接而成,级间用初级调谐的变压器耦合,叙述分三个部分:第一部分将中和了的共发射极电路用近似等效电路表示,第二部分分析级间网络,将晶体管放大器的功率增益表示成预给的频率函数后,就能导出各级间网络的谐振频率和Q值等,从而求出线路元件的数值。这些谐振频率并不是调谐到中心频率而是分布在传输频段的某些频率上的,最后举出一个数值设计实例。

 
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