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hot filament method
相关语句
  相似匹配句对
     HOT
     热报!
短句来源
     R & D of Miniature Hot Filament CVD System
     热丝化学气相沉积系统的小型化研究与开发
短句来源
     The Accurate Replacement of the Filament Winding of the Colour Television HOT
     彩电行输出变压器灯丝绕组的准确置换
短句来源
     HOT POINT
     数位热点
短句来源
     Diamond film was coated by the hot filament chemical vapor deposition method.
     在热丝化学气相沉积装置中 ,制备金刚石薄膜。
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  hot filament method
Polycrystalline diamond films have been produced on pre-treated silicon substrate by CVD hot filament method, with B(C2H5)3 added to the gas phase.
      
A test apparatus is described for determining the thermal conductivity of gases and gas mixtures by the hot filament method.
      


Diamond crystallites have been grown on silicon substrates of different surface conditions by hot-filament method using alcohol. The nuoleation and growth mechanisms of the diamond film have been discussed. CH3 is considered to be the main gas species of diamond nucleation; hydrogen atoms play an important role in nucleation and growth; and it is easier for diamond to nucleate on a silicon substrate of comparatively rough surface than on the one of a glossy surface.

以酒精为碳源,用热丝CVD法,对不同表面状况的Si衬底作金刚石沉积比较.讨论了薄膜的成核、生长机制,认为CH_2是成核的主要气相种类,H原子直接参与了成核和生长,它们在薄膜沉积中起了极为重要的作用.解释了毛糙表面的Si衬底上金刚石易成核的现象.

Polycrystalline diamond films have been selectively deposited on silicon wafer with patterned PETEOS (plasma-enhanced Tetraethylorthosilicate) SiO2 masks by chemical vapor deposition from CH4 and H2 gases using a hot-filament method. The diamond nucleation densities on the SiO2 mask area and the Si surface are affected by the substrate temperature. If the substrate temperature Ts is low (750℃-820℃), the nucleation density on the SiO2 Mask area is much smaller than that on th Si surface. With...

Polycrystalline diamond films have been selectively deposited on silicon wafer with patterned PETEOS (plasma-enhanced Tetraethylorthosilicate) SiO2 masks by chemical vapor deposition from CH4 and H2 gases using a hot-filament method. The diamond nucleation densities on the SiO2 mask area and the Si surface are affected by the substrate temperature. If the substrate temperature Ts is low (750℃-820℃), the nucleation density on the SiO2 Mask area is much smaller than that on th Si surface. With increasing Ts (> 820℃), the nucleation density on the SiO2 mask area increases rapidly. If Ts is high (>850℃), the nucleation density on the SiO2 mask area will be larger than that on the Si surface.

本文研究了在HF—CVD法中,衬底温度Ts对PETEOS(等离子体增强正硅酸乙酯)氧化硅—硅衬底上选择性生长金刚石薄膜的影响。结果表明:Ts变化影响PETEOS氧化硅掩蔽层区域和硅表面金刚石晶粒成核密度。Ts较低时(750—820℃),PETEOS氧化硅区域成核密度远小于裸露硅表面;随Ts升高(>820℃),氧化硅区域成核密度增加很快;当Ts>850℃时,氧化硅区域成核密度超过硅表面。

 
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