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solid phase crystallization
相关语句
  固相晶化
     2 Solid Phase crystallization (SPC) is main re-crystallization techniques.
     2.固相晶化法(SPC)是制备大晶粒多晶硅薄膜的主要方法。
短句来源
     Using the Solid phase crystallization process at low temperature annealing, the device quality polycrystal silicon films with large grains have been obtained from both n+ and i/n+ type a-Si : H samples, which were made by the PECVD method.
     从PECVD法制取的n~+与n/n~+两种结构的a-Si:H试样,采用低温退火固相晶化工艺,得到了满足器件质量要求的大晶粒多晶硅膜。
短句来源
     The separated silicon atoms are found to be participated in the nucleation and growth processes of solid phase crystallization of the a Si clusters, nano crystalline silicon (nc Si) is then formed.
     在析出的Si原子参与下 ,薄膜中a Si颗粒固相晶化的成核和生长过程得以进行 ,形成纳米晶硅 (nc Si) .
短句来源
     In this study the doping and intrinsic a-Si: H film was deposited by Plasma Chemical Vapor Deposition(PCVD), and the polycrystalline silicon film was obtained by Solid Phase Crystallization(SPC) of a-Si: H. The dependence of polycrystalline silicon grain size on deposition and annealing conditions has been studied by X-ray diffraction. We measured the room temperature dark conductivity and energy gap of polycrystalline silicon, and discussed the factors which have effect on them.
     用等离子体化学气相沉积(PCVD)制备掺杂和本征的a-Si:H薄膜,用固相晶化法制备多晶硅薄膜。 通过X射线衍射分析多晶硅的晶粒大小与a-Si:H的沉积条件及退火条件的关系,测量了多晶硅薄膜的室温暗电导率和光能隙,讨论了影响暗电导率和光能隙的因素。
短句来源
     THE SOLID PHASE CRYSTALLIZATION OF THE AMORPHOUS SILICON FILMS BY LOW TEMPERATURE ANNEALING
     非晶硅低温退火固相晶化的研究
短句来源
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  固相析出法
     Recent research development in solid phase crystallization method for preparing supported metal catalysts was reviewed.
     综述了近几年发展起来的一种负载型金属催化剂的制备方法——固相析出法的研究进展。
短句来源
  “solid phase crystallization”译为未确定词的双语例句
     Research Development in Solid Phase Crystallization Method for Preparing Supported Catalysts
     固相析出法制备负载型催化剂的研究进展
短句来源
     It was found that rapid thermal processing (RTP) at 800 ℃ for 60 s resulted in slightly larger average grain size and higher crystallinity than those without the RTP pretreatment after solid phase crystallization (SPC) at 800 ℃ for 5, 10 and 22 h. The results suggest that the low temperature short-time RTP pretreatment can promote the crystallization process of the as-deposited a-Si:H thin films during the following SPC and then improve their crystallinity.
     研究结果发现:较仅经过800℃下5h、10h和22h常规热处理(SPC)的晶化薄膜,经过800℃、60s快速热处理(RTP)的非晶硅薄膜在常规热处理后所得的晶化薄膜有着更大的平均晶粒尺寸和更高的晶化率。
短句来源
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  solid phase crystallization
Oxygen ions were implanted into the amorphous silicon film deposited at 540°C in order to study the effects of oxygen on the solid phase crystallization of silicon films.
      
To distinguish the various processes related to solid phase crystallization of amorphous silicon, we employ, instead, an in-situ real-time reflectance spectroscopy technique, which is simpler and less expensive.
      
This method is named as "solid phase crystallization (spc)" method and was compared with the conventional impregnation (imp) method.
      
Highly Dispersed and Stable Supported Metal Catalysts Prepared by Solid Phase Crystallization Method
      
A solid phase crystallization (spc) method was applied for the preparation of SrTiO3-supported Ni catalysts and compared to the impregnation (imp) method.
      
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Using the Solid phase crystallization process at low temperature annealing, the device quality polycrystal silicon films with large grains have been obtained from both n+ and i/n+ type a-Si : H samples, which were made by the PECVD method.The results confirme that two a-Si H films have been remarkably crystallized after annealing at 600℃ and 800℃ for 6-8h in N2gas. The grain size of the annealing films is larger than 1um,dark and photo-condutivities are three order of magnitude larger than those before...

Using the Solid phase crystallization process at low temperature annealing, the device quality polycrystal silicon films with large grains have been obtained from both n+ and i/n+ type a-Si : H samples, which were made by the PECVD method.The results confirme that two a-Si H films have been remarkably crystallized after annealing at 600℃ and 800℃ for 6-8h in N2gas. The grain size of the annealing films is larger than 1um,dark and photo-condutivities are three order of magnitude larger than those before annealed, and the mobility was increased to 10-80 times. It is believed that the annealing films have become classic polycrystal silicon films.

从PECVD法制取的n~+与n/n~+两种结构的a-Si:H试样,采用低温退火固相晶化工艺,得到了满足器件质量要求的大晶粒多晶硅膜。测试结果证实:在N_2气氛下,经6—10h的600℃(或800℃)温度的退火后,两种a-Si:H膜均已明显地晶化.测得了晶化膜的粒径>lμm,暗电导率、光电导率均比退火前增加了3个数量级,迁移率则增加了10—80倍。

The effects of B atoms on the solid phase crystallization of PECVD a-Si:H films is investigated by using the X-Ray diffraction,Hall measurements.optical reflection transmission measurements and conductivity measurements.It is found that the B atoms acts as nuclei in the SPC process.The crystallized films have high conductivity and high Hall mobility. The optical band gap of the crystallized films E04=2.16.This figure is larger than that of a-SiC:H window layers.The p-type Poly-Si layers prepared by SPC...

The effects of B atoms on the solid phase crystallization of PECVD a-Si:H films is investigated by using the X-Ray diffraction,Hall measurements.optical reflection transmission measurements and conductivity measurements.It is found that the B atoms acts as nuclei in the SPC process.The crystallized films have high conductivity and high Hall mobility. The optical band gap of the crystallized films E04=2.16.This figure is larger than that of a-SiC:H window layers.The p-type Poly-Si layers prepared by SPC method is a suitable window material for solar cell.

对掺硼(B)材料的固相晶化进行了研究。通过对不同掺B浓度的a-Si:H样品退火前后的X射线衍射、光吸收系数、电导率、激活能及Hall迁移率的测量发现,B原子在固相晶化过程中起晶核作用,晶化后的样品具有较高的迁移率及电导率,同时具有较大的禁带宽度。当接B浓度仅为0.17%时,晶化后样品的电导率为4.35scm-1,迁移率为140cm2V-1s-1,禁带宽度E04=2.16eV。该材料是一种较好的太阳电池窗口材料。

In this study the doping and intrinsic a-Si: H film was deposited by Plasma Chemical Vapor Deposition(PCVD), and the polycrystalline silicon film was obtained by Solid Phase Crystallization(SPC) of a-Si: H. The dependence of polycrystalline silicon grain size on deposition and annealing conditions has been studied by X-ray diffraction. We measured the room temperature dark conductivity and energy gap of polycrystalline silicon, and discussed the factors which have effect on them.

用等离子体化学气相沉积(PCVD)制备掺杂和本征的a-Si:H薄膜,用固相晶化法制备多晶硅薄膜。通过X射线衍射分析多晶硅的晶粒大小与a-Si:H的沉积条件及退火条件的关系,测量了多晶硅薄膜的室温暗电导率和光能隙,讨论了影响暗电导率和光能隙的因素。

 
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