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band-gap energy
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  “band-gap energy”译为未确定词的双语例句
     But, the band-gap energy of TiO2 is big (Eg=3.2eV) and UV light (λ≤387.5nm) irradiation is needed for the photocatalytic reaction, which confines effective utilization of solar energy and so confines its large-scale application.
     但是,TiO2的带隙能较大(Eg=3.2eV),需要能量较高的紫外线(λ≤387.5nm)照射才能表现出光催化活性,不能有效利用太阳能,且量子产率较低,这成为制约其大规模实用化的一个瓶颈问题。
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     Difference in extent of the Fermi energy and decrease of band-gap energy for three kinds of CNTs show that CNT with one end open is favorable for the preparation of field emission electrode.
     三种不同结构的碳纳米管在费米能的增幅上有些差异,带宽减小的程度也是不同的,一端封闭的碳纳米管在F掺杂后费米能的增幅最大,说明在制备场发射电极时选择一端封闭的碳纳米管更加有利。
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     The optical band-gap energy of the deposited films was found to be around 3.66eV of indirect-transition type.
     由“包络法”和Tauc关系确定BST薄膜的光学能隙约为3.66 eV.
短句来源
     The optical band-gap showed evidently blueshift with increasing the Al3+ concentration. For the sample doped with 20% Al3+ content,the optical band-gap energy reached 3.99 eV.The binding energy of O1s increased with increasing Al content.
     薄膜的光学带隙随掺Al3+浓度的增加而增大,掺Al3+20%的薄膜光学带隙达到3.99 eV.O1s结合能随掺Al3+浓度的增加而增大.
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     Mn incorporation results in the increase of the lattice constant and band-gap energy of ZnO, and also induces microstructural disorder.
     Mn掺杂导致了ZnO晶格常数和光学带隙的增加,并且诱导了微结构的无序性。
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  相似匹配句对
     The energy of D.
     根部能量的积累随放牧强度的提高而逐渐减少。
短句来源
     Calculation of Energy Band of Diamond
     金刚石能带的计算
短句来源
     The Calculus of Solid energy Band
     固体能带的计算方法
短句来源
     Analysis on Energy Gap of AlGaInP
     铝镓铟磷的带隙分析
短句来源
     Electron Moving in Energy Gap
     能隙中的电子运动
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  band-gap energy
Blue-shift of band-gap energy of lattice-matched AIGalnAs MQW on InP strongly depended on the temperature of Zn diffusion.
      
Therefore, the photocatalytic properties of TiO2-SiO2 should be expressed by sum of many factors such as surface area, adsorption, band-gap energy and local structure.
      
And, Ti-O-Si bonds could modify the band-gap energy and local structure.
      
For example, the reduction of particle size could effect on both of the surface area and band-gap energy.
      
The enhanced photocatalytic activity of TiO2-SiO2 could be explained by the effects of surface area, adsorption, band-gap energy and local structure.
      
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Linear and nonlinear optical absorption spectra are presented in Hg_(0.735)Cd_(0.215) Te at 100 Kusing tunable CW CO_2 laser in the region below the band gap energy.The mechanism involv-ed the transitions from acceptor states to conduction band states is expected to explain theexperiments.The rate equations for electrons and holes are solved to deduce an expression forthe saturable absorption coefficient.

本文介绍用可选支的连续CO_2激光器在低于禁带宽度的谱线范围内研究100K的Hg_(0.785)Cd_(0.215)Te线性与非线性吸收光谱,由受主能态到导带能态的直接跃迁机理成功地解释了实验现象.井由电子和空穴的速率方程导出饱和吸收的表达式.

From discussion of photoemission of semic-onductors, the concept of the photoelectron energy loss rateis introcluced in the paper.The deduced theoretical formula isused to calculate the photoelectric escape depth and theescape probability of the practical Alkali Antimong photoca-thodes. The results show that the maximum escaped depth ofS-11 cathode is 284A while the multialkali photocathodes havea larger escape depth in comparison with S-11. This is cansedby the appropriate band gap energy, higher...

From discussion of photoemission of semic-onductors, the concept of the photoelectron energy loss rateis introcluced in the paper.The deduced theoretical formula isused to calculate the photoelectric escape depth and theescape probability of the practical Alkali Antimong photoca-thodes. The results show that the maximum escaped depth ofS-11 cathode is 284A while the multialkali photocathodes havea larger escape depth in comparison with S-11. This is cansedby the appropriate band gap energy, higher threshold for pairproduction and the lower efficient electron affinity. Finally,the influence of thickness of cathodes on Long-wave and sho-rt-wave effects is analyzed, the actual toickness of the S-20VR photocathode is given as nearly as 1300A

本文从讨论半导体光电发射出发,提出了光电子能量损失速率的概念.运用所导出的理论公式,对实用锑碱光阴极的光电子逸出深度和逸出几率做了计算.结果表明:S-11光阴极的最大逸出深度为284A.与之相比,多碱光阴极有较大的逸出深度,这应归因于它有合适的带隙,较高的二次电子空穴对生成阈值以及较低的有效电子亲和势.最后,分析了阴极厚度对长波、短波响应的影响,给出了S-20VR光阴极的实际厚度约为1300A.

ZnSe is a direct-gap Semiconductor with the zinc-blende crystal structure and a relatively large band-gap energy of 2.7eV at 300K. Excitons in ZnSe are strongly bound with a binding energy of ~20meV. Recently, attention has been paid to the strained layer quantum well using a ZnSe layer as the well material, which provides the possibility to obtain excitonic emission and optical bistability (OB).The growth of ZnSe-ZnS MQWs with steep interface and narrow well have an important significance for studying...

ZnSe is a direct-gap Semiconductor with the zinc-blende crystal structure and a relatively large band-gap energy of 2.7eV at 300K. Excitons in ZnSe are strongly bound with a binding energy of ~20meV. Recently, attention has been paid to the strained layer quantum well using a ZnSe layer as the well material, which provides the possibility to obtain excitonic emission and optical bistability (OB).The growth of ZnSe-ZnS MQWs with steep interface and narrow well have an important significance for studying quantum size effect, subband transition and carrier scattering. Taike et al. [2] has reported the growth of ZnSe-ZnS SLS with well thickness (Lw) of ~0.5nm by MBE. But the PL peak position is about 430nm which is not agreed with the result calculated by Kroning-Penney model. In this paper, we report, for the first time, the preparation of narrow well ZnSe-ZnS MQWs with well Thickness(Lw) of ~0.5nm and the excitonic peak blue shift to 375nm (3.304eV). X-ray diffraction shows the ZnSe-ZnS with good quality periodic structure. The excitonic peak in PL spectrum shifts towards higher energy side as the well thickness reducing, indicating the quantum size effect of the ZnSe-ZnS MQWs.

本文报导了利用常压MOCVD法制备窄阱ZnSe·ZnS应变多量子阱的方法,经X射线衍射、光致发光(PL)及扫描电镜(SEM)实验测定表明,该结构具有较好的结晶质量,阱宽约为0.5nm。

 
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