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in-doping
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  “in-doping”译为未确定词的双语例句
     Synthesis of GaN nanowires and nano-pyramids in a two-hot-boat chemical vapor deposition system via an In-doping technique
     在双热舟化学气相沉积系统中通过掺In技术生长GaN纳米线和纳米锥
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     Synthesis and In-doping of MgB_2 Superconductor
     MgB_2超导体的制备及In掺杂研究
短句来源
     The carrier concentration decreases by In-doping, leading to electrical resistivity and Seebeck coefficient increasing.
     In掺杂对β-Zn_4Sb_3化合物的载流子浓度、电导率、Seebeck系数有显著的影响。
短句来源
     The experimental results show that the isoelectronic In-doping results in obvious reduction of the crystal defects in HB-GaAs. However, the doping amount and its uniform distribution are crucial.
     实验结果表明,等电子掺杂In非常明显地降低了HB法GaAs晶体的缺陷,但其掺入量及其均匀分布十分关键。
短句来源
     The structure, surfaces morphology and photoluminescent spectra of the sample are characterized by X-ray diffractometer, atomic force microscopy and fluorescent spectrophotometer, respectively. The effect of In-doping on the structure and photoluminescent properties of the films is analyzed.
     用X射线衍射仪、原子力显微镜和荧光分光光度计分别对两样品的结构、表面形貌和光致发光特性进行了表征 ,分析了In掺杂对ZnO薄膜的结构和发光特性的影响。
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  in-doping
Photoconductance-lifetime measurements suggest that In-doping may introduce Shockley-Read-Hall (SRH) recombination centers.
      
This nonuniformity along the vertical direction is caused mostly by the composition change of Cd, Zn, Te, and In-doping level in the growth melt caused by differences in the segregation coefficients of these elements.
      
Atomic force microscope observation revealed that In-doping modified the morphology of the nuclei.
      
Influence of In-doping on resistivity of chemical bath deposited SnS films
      


The relation between the BBr_3 original concentration in doping source and the stability of the boron vaporing quantity during the vaporization process of the BBr_3·SiCl_4 mixing liquid doping source used in P/P+ silicon epitaxial technique was studied through the epitaxial growth practice and meanwhile with the aid of the ultraviolet emission spectrum. The prescription of the stable doping source of the boron vaporing quantity has been obtained. It was also discussed that the relation between the resistivity...

The relation between the BBr_3 original concentration in doping source and the stability of the boron vaporing quantity during the vaporization process of the BBr_3·SiCl_4 mixing liquid doping source used in P/P+ silicon epitaxial technique was studied through the epitaxial growth practice and meanwhile with the aid of the ultraviolet emission spectrum. The prescription of the stable doping source of the boron vaporing quantity has been obtained. It was also discussed that the relation between the resistivity of epitaxial layers and the contaminated reactor,the pipe system,the susceptor,the temperature of the epitaxial growth,the concentration of impurities in the substrate and the condition of the capsulation in the back slice.P/P+ epitaxial wafers with good consistence and uniformity in the resistivity have been produced with application of the two above research results in our epitaxial growth technology.

本文通过实验和紫外发射光谱分析,研究了 P/P+硅外延工艺中使用的BBr_3、SiCl_4混合液掺杂源蒸发过程中硼蒸发量稳定性与掺杂源中 BBr_3初始含量的关系,并获得了硼蒸发量稳定的掺杂源配方.本文还研究了沾污的反应室、系统管道、基座、外延生长温度、衬底杂质浓度及背面封闭层与外延层电阻率的关系.将这两方面的研究结果应用于外延生长中,制备出电阻率一致性、均匀性好的 P/P+外延片.

Ga or In doped a-Si∶H samples show higher photoconductivity,which will notbe quenched even if their dark conductivity reaches 10~(-3)(Ω.cm).Ga or In dopingalso increases N,of a-Si:H at 1.2 eV below E_c·It is found that all doped sampleswith the same σ_D have the same N(?).value no matter what dopant is used.This showsthat increase in N(?)value is caused by electroactive doping.Ga or In doping has lessinfluence on the absorption edge than B_2H_(?) doping.This perhaps is due to the fact thatGa or In has lower...

Ga or In doped a-Si∶H samples show higher photoconductivity,which will notbe quenched even if their dark conductivity reaches 10~(-3)(Ω.cm).Ga or In dopingalso increases N,of a-Si:H at 1.2 eV below E_c·It is found that all doped sampleswith the same σ_D have the same N(?).value no matter what dopant is used.This showsthat increase in N(?)value is caused by electroactive doping.Ga or In doping has lessinfluence on the absorption edge than B_2H_(?) doping.This perhaps is due to the fact thatGa or In has lower electro-negativity and larger atomic radius,thus has less inclina-tion to construct so-called bridging three centre bond.

Ga、In 掺杂比 B_2H_6掺杂的 a-Si∶H 具有较高的光电导率,而且直至 σ_D=10~(-3)(Ω·cm)~(-1)尚未出现猝灭现象。Ga、In 也使得 E_(?)以下1.2 eV 处缺陷态密度 N_s 增大。用不同掺杂剂制备 σ_D 相同的试样具有相同的 N_s,因此 N_s 的增大是由活性掺杂的结果,与掺杂剂无关。Ga、In 对吸收边的影响远小于 B_2H_6。这可能是由于它们电负性较小,原子较大,不如硼原子那样易构成桥式三中心键的缘故。

The four Kinds of dopants, I2, Br2, BF3. ether and fuming H2SO4, are used in doping of polyphenylacetylene. It is discovered that the effect of fuming H2SO4 is the best and of I2 is the west. The conductivity of polyphenylacetylene and doped polyphenylacetylene is measured. The conductivity of polyphenylacetylene of various molecular weight and density is measured also and these experiments state that the higher the molecular weight is, the higher the conductivity is, and the larger the density is, the higher...

The four Kinds of dopants, I2, Br2, BF3. ether and fuming H2SO4, are used in doping of polyphenylacetylene. It is discovered that the effect of fuming H2SO4 is the best and of I2 is the west. The conductivity of polyphenylacetylene and doped polyphenylacetylene is measured. The conductivity of polyphenylacetylene of various molecular weight and density is measured also and these experiments state that the higher the molecular weight is, the higher the conductivity is, and the larger the density is, the higher the conductivity is.

用四种掺杂剂,I_2、Br_2、BF_3·乙醚和发烟H_2SO_4,作了聚苯乙炔(PPA)的掺杂。对掺杂及未掺杂的PPA做了电导率测定。实验表明,发烟H_2SO_4掺杂效果较好(电导率提高10~7倍),I_2较差。对不同分子量和不同密度的PPA的电导率测定表明;PPA分子量越高,电导率越高;PPA密度越大,电导率越高,并且PPA分子量越大,掺杂后电导率提高的幅度也越大。本文还讨论了掺杂机理和无水AlCl_3在苯乙炔聚合过程中的同步掺杂作用。

 
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