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solid phase reaction
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  固相反应
     Heteroepitaxial Growth of CoSi 2 on Si(100) Substrate by Co/Si/Ti/Si Multilayer Solid Phase Reaction
     Co/Si/Ti/Si(100)多层薄膜固相反应异质外延生长CoSi_2薄膜
短句来源
     Synthesis of Thermoelectric Compound Mg_2Si_(1-x )Ge_x by Solid Phase Reaction
     用固相反应合成Mg_2Si_(1-x)Ge_x热电固溶体
短句来源
     Epitaxial Growth of CoSi_2 on Si(100) Substrate by Co/GeSi/Ti/Si Multilayer Solid Phase Reaction
     Co/a-GeSi/Ti/Si多层薄膜固相反应外延生长CoSi_2薄膜
短句来源
     STUDY ON INFRARED ABSORPTION SPECTROMETRY IN SOLID PHASE REACTION OF THE Kta_(0.4)Nb_(0. 6)O_3 FERROELECTRIC CERAMICS
     KTa_(0.4)Nb_(0.6)O_3铁电陶瓷固相反应中红外吸收光谱的研究
短句来源
     A STUDY OF THE SOLID PHASE REACTION OF COORDINATIONCOMPOUNDS-SYNTHESIS AND THERMALDECOMPOSITION OF K_3 [C_r (C_2 O_4 )_3 ]
     配合物固相反应研究(Ⅰ)—K_3[Cr(C_2O_4)_3]的合成与热分解
短句来源
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  固相反应法
     A New Synthetic Method for Molybdenum Bronze Na_xMo_6O_(17) by Solid Phase Reaction
     新的固相反应法合成钼青铜化合物Na_xMo_6O_(17)的研究
短句来源
     Low thermal expansion ceramic powder of (Na, K)_(1-x)(Ca, Sr)_(x/2)Zr_2P_3O_(12)(O≤x≤ 1) system prepared by solid phase reaction, sol-gel method and hydrothermal method was stu- died, crystals of the powder obtained was perfectly crystallized and of high purity.
     本文探讨了用固相反应法,熔胶-凝胶法,水热法合成(Na,K)_(1-x)(Ca,Sr)_(x/2)2Zr_2P_3O_(12)(O≤x≤1)系低膨胀陶瓷粉体。
短句来源
     A W _ type hexagonal ferrite BaZn2Fe16O27 was prepared by solid phase reaction in the ternary system BaO-ZnO-Fe2O3. Its morphology observation and phase identification were carried out by SEM and XRD, and X _ ray powder diffraction data were first given in this paper.
     在BaO -ZnO -Fe2O3 三元系统中 ,利用固相反应法合成了W型六角晶系铁氧体BaZn2Fe16O27,采用扫描电镜 (SEM)和X射线衍射法 (XRD)对该化合物进行了形貌观察和物相分析 ,并报道了其特征X射线衍射数据。
短句来源
     New compound,La 2-x Ag x CaCu 2O 6 has been prepared by high temperature solid phase reaction.
     用高温固相反应法合成了La2 -xAgxCaCu2 O6新化合物 .
短句来源
     Synthesizing technologies of Li_4Ti_5O_12 with amorphous TiO_2 as raw materials were firstly exploited by conventional solid phase reaction and sol-gel method, and the cost of materials and technologies are lower than other.
     首次研究了以无定形TiO_2为原料,通过固相反应法和溶胶-凝胶法二种工艺合成Li_4Ti_5O_(12),实现了原料和工艺低成本化。
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  “solid phase reaction”译为未确定词的双语例句
     THE PREPARATION OF 2, 4, 6--TRIS(2', 4'--DIHYDROXYPHENYL)--1, 3, 5--TRIAZINE BY SOLID PHASE REACTION
     固相法合成2,4,6,-三(2’,4’-二羟基苯基)-1,3,5-三嗪
短句来源
     A sample of the(Ca,Na,Ce) P_2O_7 phosphor was prepared by the solid phase reaction method.
     对(Ca,Na,Ce)P_2O_7紫外荧光粉的制备,组成及发光性能进行了研究,实验证明:该荧光粉的最佳组成为[Ca_(2-x-y),Na_(x),Ce_(y)]P_2O_7,其中x=y=0.185;
短句来源
     Study on the Preparaion of CdS_(1-x)Se_x By solid Phase Reaction at Room Temperature
     低温固相法制备CdS_(1-x)Se_x颜料的研究
短句来源
     A CaCu3Ti4O12 ceramic with a dielectric constant of 194753 was obtained by sintering at 1 100 ℃ and using the powder calcined at 800 ℃, which is much higher than that prepared by the traditional solid phase reaction process.
     在800℃预烧的CaCu3Ti4O12粉体并在1 100℃温度下烧结制备的陶瓷,其介电常数可达194753。
短句来源
     Using CaCO3, Mg(NO3)2·6H2O, CaCl2, SiO2 and Eu2O3 as raw materials, a new Eu2+-doped phosphor Ca8-xMg(SiO4)4Cl2:Eux2+ has been synthesized by high temperature solid phase reaction.
     ,SiO_2(_4N),Mg(NO_3)_2·6H_2O(A.R.) ,CaCl_2(A.R.)
短句来源
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  solid phase reaction
Titanium germanosilicide films from thin Ti films (~27.5 nm) are formed by solid phase reaction of Ti/Si0.62Ge0.38 bilayer at different annealing temperatures ranging from 600°C to 800°C.
      
Solid phase reaction of Ti with Si-Ge layers prepared by Ge-implantation
      
Most of the hercynite and ilmenite initially present are decomposed during the gas-solid phase reaction between 1273 and 1823 K.
      
This effect is due to solid phase reaction between the cement particles and the amorphized surface of the grains of chemically single-type dispersants.
      
Solid phase reaction between crystalline, (002) oriented Co film and Si(111) substrate: Preferential orientations of silicides
      
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The Preparation of 2,4,6—Tris (2′,4′—dihydroxyphenyl)—1,3,5— triazine with cyanuric chloride and resorcin by Friedel—Crafts react- ion usually takes place in the presence of an organic solvent,mainly nitrobenzene.Instead of the solvent,we have employed solid phase reaction and successfully realized the synthesis of 2,4,6—Tris(2′,4′— dihydroxyphenyl)—1,3,5—triazine.Thereby the harm of the toxic solv- ent,nitrobenzene,is eliminated.Meanwhile,it shortens the technologi- cal process and the time spent in production...

The Preparation of 2,4,6—Tris (2′,4′—dihydroxyphenyl)—1,3,5— triazine with cyanuric chloride and resorcin by Friedel—Crafts react- ion usually takes place in the presence of an organic solvent,mainly nitrobenzene.Instead of the solvent,we have employed solid phase reaction and successfully realized the synthesis of 2,4,6—Tris(2′,4′— dihydroxyphenyl)—1,3,5—triazine.Thereby the harm of the toxic solv- ent,nitrobenzene,is eliminated.Meanwhile,it shortens the technologi- cal process and the time spent in production end lowers the fuel consu- mption.The reavtion procedes in a self-made solid phase reactor in the shape of bali-crusher.The proportion of the raw materi als,cya- nuric chloride,resorcin and aluminium trichlorideis 1:3:2 (mol.). Mixing and powdering the raw materials takes 60 min.at room tempe- rature.The reaction temperature is 80—90℃,and the reaction period, 3.5—4.0 hours.The yield of the crude product is >95% witha purity >80%.

本文采取不用溶剂的固相反应实现了2,4,6—三(2′,4—二羟基苯基)—1,3,5—三嗪的合成,消除了有毒溶剂硝基苯的危害,同时缩短了工艺过程和生产周期,并降低了燃料消耗。

This paper describes profile and distributing characteristics of softening-melting zone in the dissected experimental blast furnace (23m~3) of SISC. The softening-melting zone appears in a profile of inversed V-shape. In the dissected blast furnace transitional sticking layers before softening and melting were discovered. Process of softenting-melting zone formation consists of solid phase reaction, sticking, softening-melting and dripping one after another. Conditions determining the shape of softening-melting...

This paper describes profile and distributing characteristics of softening-melting zone in the dissected experimental blast furnace (23m~3) of SISC. The softening-melting zone appears in a profile of inversed V-shape. In the dissected blast furnace transitional sticking layers before softening and melting were discovered. Process of softenting-melting zone formation consists of solid phase reaction, sticking, softening-melting and dripping one after another. Conditions determining the shape of softening-melting zone depend upon temperature field and mineral constitution of the ore (sinter). Iron and slag begin to seperate in the softening-melting zone, which is made up mainly with metallic iron, melting point of which is higher because of few carbonization. Flat-profile of softening-melting zone is benificial to smooth descending of burden materials and more indirect reduction as high as possible in the blast furnace.

本文描述首钢实验高炉 (23m~3) 解剖后出现的软熔带形状和分布特征,它基本上是焦矿交替的倒V形结构.高炉解剖发现有粘结层,它是形成软熔带的过渡层.软熔带全部形成过程包括固相反应、粘结、软熔和滴落等.决定软熔带形状的是温度场和矿物组成.在软熔带渣铁开始分离,软熔带主要由未渗碳、熔点高的金属铁组成,平坦式的软熔带分布能保证高炉顺行和最大限度提高间接还原率.

Reactions at Ti/Si and Ti/SiO_2/Si interface under the conditions of steady-state thermalannealing and CW-Ar~+ laser annealing have been studied using a variety of techniques inclu-ding AES,XPS,RBS, X-ray diffraction.Ti thin films on silicon have been transformed toTi_5Si_3,TiSi and TiSi_2 after steady-state annealing at 500-600℃, and only TiSi_2 can be ob-served after annealing above 650℃.In the case of Ti/SiO_2/Si system, Ti_6Si_2 thin film withTiO overlayer has been formed in the temperature range of...

Reactions at Ti/Si and Ti/SiO_2/Si interface under the conditions of steady-state thermalannealing and CW-Ar~+ laser annealing have been studied using a variety of techniques inclu-ding AES,XPS,RBS, X-ray diffraction.Ti thin films on silicon have been transformed toTi_5Si_3,TiSi and TiSi_2 after steady-state annealing at 500-600℃, and only TiSi_2 can be ob-served after annealing above 650℃.In the case of Ti/SiO_2/Si system, Ti_6Si_2 thin film withTiO overlayer has been formed in the temperature range of 750-1000℃.The growth ofTiSi_2 layer on silicon and Ti_6Si_2 layer on SiO_2 shows a diffusion-limited behavier,i.e.x∞t~(1/2). CW-Ar~+ laser scanned annealing can induce the solid-phase reaction of Ti/Si at powerdensity less than 2.7 kW/cm~2,but liquitphase reaction at power density about 3.8 kW/cm~2.Amixure of TiSi_2 and pure Si was observed after liquid-phase reaction.Experimental resultshave also been discussed.

用AES、XPS、RBS和X射线衍射等技术研究了在稳态热退火和激光退火条件下,Ti/Si和 Ti/SiO_2/Si系统硅化物的形成.在 500—600℃稳态热退火条件下,Ti/Si系统形成 Ti_5Si_3、TiSi和 TiSi_2三种硅化物;高于 650℃,只存在TiSi_2.TiSi_2的生长服从 △x∝t~(1/2).Ti/SiO_2/Si系统,750℃以上退火,形成覆盖层为TiO 的Ti_5Si_3薄膜,△x∝t~(1/2). CW-Ar~+激火扫描退火Ti/Si样品,功率密度小于2.7kW/cm~2,产生固相反应;功率密度~3.8kW/cm~2,产生液相反应,并形成TiSi_2和纯Si的混合薄膜.对实验结果进行了讨论.

 
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