In this paper, a new method is proposed to enlarge the measurement range of the LD SPM interferometer with a photothermal wavelength modulation. Using this method, the measurement range is enlarged from half wavelength to 125.56 μm and the measurement accuracy is 1.2 nm.
In this paper, a new method is proposed to enlarge the measurement range of the LD-SPM interferometer with a photothermal wavelength modulation. Using this method, the measurement range is enlarged from half wavelength to 125.56 pm and the measurement accuracy is 1.2 nm. The probability of enlarging the measurement range further is discussed.
Weak absorptions of optical coatings are measured by transitivephotothermal deflection spectroscopy with a sensitivity of 10-6. The experimental results are in good agreement with those measured by laser calorimeter and those by the transverse photothermal deflection method.
A new differential photothermal deflection configuration was presented. This optical system has advantages including its ability to need only a single position sensor, to adjust the distance between the sample and reference cells conveniently, to align electronic compensation and differential optical system easily, and to eliminate the effect of the solvent absorption and power fluctuation in pump source efficiently.
Thermal-lens spectrometry and photothermal deflection spectroscopy (mirage-effect spectroscopy) are used to study active bright red 5SKh bonded to a glass surface.
Using photothermal deflection spectroscopy, it is shown that the thickness of the layer on the glass surface does not exceed 700 nm.
Based on the data concerning the effects of light and thermal integrals on the developmental rate of plants of different photoperiodic groups, a photothermal model of plant development was proposed.
Using a photothermal laser deflection technique the profiles of laser-induced hyperacoustic pulses in single crystal germanium were studied at a subnanosecond time resolution.
It is shown that the photothermal electron excitation from the localized states lying below the Fermi level in the energy gap of p-GaN(Cs, O) is the dominant photoemission mechanism at the low-energy photoemission threshold.
In this article,the development of laser measuring instrument and advance of laser power and energy meter using three detectors:photothermal,photoelectric and pyroelectric in the native and foreign at last years are described,a brief comment is made on the future development of these instruments.At last,the typing instrument performances are introduced by tables.
Infrared absorption ooeffioients of GaAs, NaCl, N-type single crystals Ge and Si are measured at 10.6μm by photothermal deflection spectroscopy method which is simple and supersensitive. The experimental results are in good agreement with those measured by photoacoustio speotroscopy and other data.
The optical absorption spectroscopies of a-Si:H/a-SiN_x:H multilayer films (superlattice) with different thicknesses of a-Si:H sublayer are measured using photothermal deflection spectrosoopy technique. Density of gap states of multilayer film samples and its variation with a-Si:H sublayer thickness are determined from the absorption spectra. The density of interface states is approximately 5×10~(11)cm~(-2) eV~(-1). The error in calculating density of gap states is estimated.