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photothermal     
相关语句
  光热
     DENSITY OF GAP STATES IN a-Si:H/a-SiN_x:H MULTILAYER FILMS FROM PHOTOTHERMAL DEFLECTION SPECTROSCOPY
     用光热偏转光谱技术测量a-Si:H/a-SiN_x:H多层膜的能隙态密度
短句来源
     Influence of Stress on Thermal Diffusivity by Laser Photothermal Technique
     利用激光光热技术研究材料应力对热扩散率的影响
短句来源
     Spectral Characteristics of Dithizone(H_2Dz)Solid Samples Using Transverse Photothermal Deflection Techniques
     横向光热偏转技术检测双硫腙(H_2Dz)固体试样光谱特性
短句来源
     Photothermal Absorption Research of ZrO_2 Dielectric Thin Film
     ZrO_2介质膜的光热吸收研究
短句来源
     (2) Data processing method of pulsed photothermal radiometry based on image.
     2.基于图像的脉冲光热辐射测量的数据处理方法。
短句来源
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  光热调制
     Photothermal Wavelength Modulation of a Laser Diode for Decreasing Measurement Error
     光热调制半导体激光波长降低干涉测量误差
短句来源
     Photothermal Modulation of Laser Diode Wavelength for Measuring Microvibrations
     光热调制激光波长测量物体的微小振动
短句来源
     Study on Photothermal Intensity-modulation Characteristics of Laser-diode
     半导体激光器光强光热调制特性的研究
短句来源
     In this paper, a new method is proposed to enlarge the measurement range of the LD SPM interferometer with a photothermal wavelength modulation. Using this method, the measurement range is enlarged from half wavelength to 125.56 μm and the measurement accuracy is 1.2 nm.
     在光频光热调制半导体激光正弦相位调制干涉仪的基础上 ,提出了一种扩大其测量范围的方法 ,使得在保持纳米精度的前提下 ,测量范围由半个波长扩大为 12 5 5 6 μm ,并讨论了进一步扩大测量范围的可能性。
短句来源
     In this paper, a new method is proposed to enlarge the measurement range of the LD-SPM interferometer with a photothermal wavelength modulation. Using this method, the measurement range is enlarged from half wavelength to 125.56 pm and the measurement accuracy is 1.2 nm. The probability of enlarging the measurement range further is discussed.
     本文在作者提出的光频光热调制半导体激光正弦相位调制干涉仪的基础上,提出了一种扩大其测量范围的方法,使得在保持纳米精度的前提下,测量范围由半个波长扩大为 125.56 μm,并讨论了进一步扩大测量范围的可能性.本方法得到了模拟计算和实验结果的很好验证.
短句来源
  式光热
     The experimental setup's establishment and application for transmission photothermal deflection technique
     透射式光热偏转技术实验装置的建立及应用
短句来源
     Measurement of absorption distribution on optical thin film by scanning photothermal microscopy
     扫描式光热显微镜测量光学薄膜吸收率的分布
短句来源
     OBLIQUELY-CROSSED COLLINEAR PHOTOTHERMAL DEFLECTION:THEORY AND EXPERIMENT
     斜交共线式光热偏转的理论和实验
短句来源
     Weak absorptions of optical coatings are measured by transitivephotothermal deflection spectroscopy with a sensitivity of 10-6. The experimental results are in good agreement with those measured by laser calorimeter and those by the transverse photothermal deflection method.
     建立了一套透射式光热偏转光谱术实验装置,将它应用于光学薄膜微弱吸收率的测量,灵敏度可达10~(-6),实验结果与用激光量热法及横向光热偏转法所得者皆符合良好。
短句来源
     A new differential photothermal deflection configuration was presented. This optical system has advantages including its ability to need only a single position sensor, to adjust the distance between the sample and reference cells conveniently, to align electronic compensation and differential optical system easily, and to eliminate the effect of the solvent absorption and power fluctuation in pump source efficiently.
     本工作设计了一种新的差分式光热偏转光路构型,光路的优点是只使用单一的位置传感器,可随意调节样品池和参考池的距离,电学补偿和差分光路装置简单,容易调整,可以有效地消除溶剂空白吸收的影响和泵浦激光功率起伏的影响。
短句来源
更多       
  激光光热
     Influence of Stress on Thermal Diffusivity by Laser Photothermal Technique
     利用激光光热技术研究材料应力对热扩散率的影响
短句来源
     Using Laser Photothermal Technique Measurement the Initial Stress of Material
     利用激光光热技术测量材料初始应力
短句来源
     The principle and experiment of measuring material initial stress by laser photothermal technique are introduced in this article.
     阐述利用激光光热技术测量材料初始应力的原理及实验技术。
短句来源
     Thermal Diffusivity Measurement with Laser Photothermal Optical Beam Deflection Method
     激光光热光束偏转方法测量材料的热扩散系数
短句来源
     Theoretical Analysis of Thickness Measurement with Laser Photothermal Beam Deflection
     激光光热光束偏转方法测厚的理论分析
短句来源
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      photothermal
    Thermal-lens spectrometry and photothermal deflection spectroscopy (mirage-effect spectroscopy) are used to study active bright red 5SKh bonded to a glass surface.
          
    Using photothermal deflection spectroscopy, it is shown that the thickness of the layer on the glass surface does not exceed 700 nm.
          
    Based on the data concerning the effects of light and thermal integrals on the developmental rate of plants of different photoperiodic groups, a photothermal model of plant development was proposed.
          
    Using a photothermal laser deflection technique the profiles of laser-induced hyperacoustic pulses in single crystal germanium were studied at a subnanosecond time resolution.
          
    It is shown that the photothermal electron excitation from the localized states lying below the Fermi level in the energy gap of p-GaN(Cs, O) is the dominant photoemission mechanism at the low-energy photoemission threshold.
          
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    In this article,the development of laser measuring instrument and advance of laser power and energy meter using three detectors:photothermal,photoelectric and pyroelectric in the native and foreign at last years are described,a brief comment is made on the future development of these instruments.At last,the typing instrument performances are introduced by tables.

    本文综述了近几年来国内外激光测量仪器的发展概况和量热型、光电型、热释电型三类激光功率、能量计的进展。对仪器的发展趋势作了简短评述。最后列表介绍了国内外部份定型仪器的性能。

    Infrared absorption ooeffioients of GaAs, NaCl, N-type single crystals Ge and Si are measured at 10.6μm by photothermal deflection spectroscopy method which is simple and supersensitive. The experimental results are in good agreement with those measured by photoacoustio speotroscopy and other data.

    用简单的超高灵敏度光热光偏转方法研究GaAs、NaCl、N型单晶Ge和Si等材料在10.6/μm的吸收特性,测得以上几种材料的吸收系数。实验结果与国内外报道符合得较好。

    The optical absorption spectroscopies of a-Si:H/a-SiN_x:H multilayer films (superlattice) with different thicknesses of a-Si:H sublayer are measured using photothermal deflection spectrosoopy technique. Density of gap states of multilayer film samples and its variation with a-Si:H sublayer thickness are determined from the absorption spectra. The density of interface states is approximately 5×10~(11)cm~(-2) eV~(-1). The error in calculating density of gap states is estimated.

    用光热偏转光谱技术测量了不同a-Si:H层厚度的a-Si:H/a-SiN_x:H多层膜(超品格)材料的吸收光谱,求出多层膜材料的隙态密度及其随a-Si:H层厚度的变化,估算出界面态密度为~5×10~(11)cm~(-2)eV~(-1),最后估算了隙态密度的计算误差。

     
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