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  bond-wire
Also planar inductors on silicon and bond-wire inductors are shown to be valuable to achieve a return loss of about 9 dB for input and output ports of a mixer.
      


Bond heel cracks are one of the most common problems in Al wire ultrasonic bonding process. Bad bond heel cracks impair bond strength, even lead to the failure in bond. Bond heel cracks are investigated by optimizing process parameters of bonder, analyzing composition of bonding wire and taking different annealing conditions. The results are helpful for further improving the bond strength and choosing bond wire.

键合点根部损伤是Al丝超声键合工艺中最常见的问题,严重的根部损伤不仅使焊点的键合强度降低,甚至会使键合点失效。通过优化键合机器的工艺参数、分析键合丝的组分和采取不同的退火条件,研究Al丝超声键合中,键合点根部损伤的程度,为键合丝的选用和提高Al丝超声键合强度提供依据。

A new method of measuring the real scattering par ameters of electroabsorption modulated DFB laser is presented.According to the equivalent circuit model of parasitic parameters of the submount,bond wire and intrinsic parameters of the electroabsorption modulated DFB laser,the measured data are modeled and those parameters are extracted.It is presented that the parasitic parameters have large effects on the true measurement of the device.After the effects of the parasitic parameters are eliminated,the real frequency...

A new method of measuring the real scattering par ameters of electroabsorption modulated DFB laser is presented.According to the equivalent circuit model of parasitic parameters of the submount,bond wire and intrinsic parameters of the electroabsorption modulated DFB laser,the measured data are modeled and those parameters are extracted.It is presented that the parasitic parameters have large effects on the true measurement of the device.After the effects of the parasitic parameters are eliminated,the real frequency responses of the device can be obtained.

提出了一种测量电吸收调制器和激光器集成器件芯片散射参数的新方法 .根据电吸收调制器和封装寄生参数的等效电路模型 ,对测量的反射系数进行拟合 ,得到封装寄生参数和电吸收调制器的等效电路元件的参数值 .通过分析发现测试封装寄生参数对电吸收调制器的测试结果有很大影响 .去除了封装寄生参数的影响后 ,得到了调制器的反射和传输参数的真实频响特性

An accurate measurement technique for the impedance and modulation frequency response of photodiodes is presented. In the measurement, the photodiode is mounted on a submount, and bond wires are used to connect the electrodes of chip. The test fixture consists of a microwave probe, a submount, and bond wires, and their scattering parameter can be attained by some accurate measurements. So the intrinsic characteristics of chips can be obtained by completely removing the effect of test fixture using microwave...

An accurate measurement technique for the impedance and modulation frequency response of photodiodes is presented. In the measurement, the photodiode is mounted on a submount, and bond wires are used to connect the electrodes of chip. The test fixture consists of a microwave probe, a submount, and bond wires, and their scattering parameter can be attained by some accurate measurements. So the intrinsic characteristics of chips can be obtained by completely removing the effect of test fixture using microwave network theory and overcome the dependency on the electrode figures in conventional methods. Experimental results for a photodiode with coplanar electrodes demonstrate the validity of the proposed technique in the region 50 MHz~16 GHz.

为了克服用共面探针测量光探测器芯片的高频特性对电极结构的限制 ,提出了一种精确测量光探测器芯片的阻抗和频率响应的新方法。对于任意电极结构的探测器芯片 ,首先把芯片与测试夹具连接 ,通过一系列的校准和测量 ,可以得到夹具的S参数 ,进而利用微波理论扣除整个测试夹具的影响 ,得到探测器芯片的S参数 ,计算出光探测器的阻抗和频率响应特性。用该方法对P极和N极共面的光探测器芯片的阻抗和频率响应特性进行了测量 ,并与直接用微波探针测量的结果相比较 ,验证了该方法在 5 0MHz~ 16GHz的频率范围内的正确性。

 
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