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hot-filament chemical vapor deposition
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  “hot-filament chemical vapor deposition”译为未确定词的双语例句
     The silicon carbon nitride (SiCN) films were successfully synthesized on silicon substrate using SiH4/CH4/ H2/N2 mixture by hot-filament chemical vapor deposition (HFCVD) without bias.
     在HFCVD系统中采用SiH4/CH4/H2/N2混合气体成功的制备了SiCN薄膜.
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     Ball-like diamond films were deposited in p-Si(100) substrate by a hot-filament chemical vapor deposition (CVD) method.
     在 p Si(10 0 )基体上用热丝CVD法沉积了球形金刚石薄膜。
短句来源
     The diamond film was prepared on Si(111) by the plasma assistant hot-filament chemical vapor deposition.
     在等离子体辅助化学气相沉积金刚石的设备中,在Si(111)基体上进行沉积金刚石薄膜的实验。
短句来源
     Plasma Assistant Hot-filament Chemical Vapor Deposition of Diamond Film
     等离子体辅助热丝化学气相沉积金刚石膜
短句来源
     In present work, (100) oriented CVD diamond films with different quality obtained by a hot-filament chemical vapor deposition (HFCVD) technique were used to fabricate radiation detectors.
     本工作利用热丝化学气相沉积(HFCVD)法获得了(100)取向不同质量的金刚石薄膜,并制备了CVD金刚石辐射探测器。
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  hot-filament chemical vapor deposition
Diamond films on the p-type Si(111) and p-type(100) substrates were prepared by microwave plasma chemical vapor deposition (MWCVD) and hot-filament chemical vapor deposition (HFCVD) by using a mixture of methane CH4 and hydrogen H2 as gas feed.
      
In this paper, the growth of Lonsdaleite diamond using hot-filament chemical vapor deposition (HFCVD) on flashed and reconstructed Si (100) is reported.
      
Lonsdaleite diamond growth on reconstructed Si (100) by hot-filament chemical vapor deposition (HFCVD)
      
Effects of Ti- and Zr-based interlayer coatings on hot-filament chemical vapor deposition of diamond on high-speed steel
      
Hot-filament chemical vapor deposition (CVD) has been used to deposit diamond films onto a treated steel surface.
      
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In this paper,diamond film had been synthesized on Si_3N_4+SiC composite ce-ramics and sialon ceramics by HFCVD(hot filament chemical vapor deposition).The obtaindfilms were analysized by X-ray diffraction,Raman spectrometer,scanning electron microscopy,profilograph and scratch tester.The adhesion of the film was measured and the effective actor ofthe adhesion between the film and substrate was tentativly studied.

本文用热丝 CVD 法在氮化硅复合陶瓷及 Sialon 陶瓷上沉积了金刚石薄膜,用 X 射线衍射、拉曼光谱、扫描电子显微镜、表面形貌仪、划痕实验仪对所形成的膜及基体进行了分析。初步探讨了膜与基材的附着性影响因素。

Diamond film was deposited on the ceramic substrates of Si_3N_4, AIN, and sialon by hot filament chemical vapor deposition (HFCVD). The process parameters were similar to those in the deposition of diamond film on single crystalline silicon wafer and the growth rate of diamond was 1 μm/h, which is slightly lower than that for silicon wafer. Formation of diamond was identified by using Raman spectroscopy and X-ray diffraction analysis and scanning electron microscopy. To evaluate the adhesion...

Diamond film was deposited on the ceramic substrates of Si_3N_4, AIN, and sialon by hot filament chemical vapor deposition (HFCVD). The process parameters were similar to those in the deposition of diamond film on single crystalline silicon wafer and the growth rate of diamond was 1 μm/h, which is slightly lower than that for silicon wafer. Formation of diamond was identified by using Raman spectroscopy and X-ray diffraction analysis and scanning electron microscopy. To evaluate the adhesion between the diamond film and the substrate, scratch testing has been used to measure the critical loading. The highest adhesion was obtained for Si_3N_4 and sialon substrates. It is shown also experimentally that the adhesion between the diamond film and the substrate decreases with the increase of thickness of the diamond film.

用热丝法在Si_3N_4,AlN,sialon陶瓷基材上沉积了金刚石薄膜。沉积参数与在单晶硅上沉积金刚石基本一致.沉积速率为1μm/h。用X射线衍射和Raman光谱检测了所形成的膜。用划痕实验估测膜基附着力。结果表明:在Si_3N_4和sialon陶瓷基材上附着力较好;随金刚石膜厚增长,膜基附着力下降。

Diamond film synthesized by hot-filament chemical vapor deposition was depositedonto planer interdgital microelectrode arrays forming a thermal-sensitive device of diamondfilm. The measurement was performed on the device when the temperature changed from 0~700℃. Results show that the device exhibited a high sensitivity, good stability and was con-venient to be integrated as a temperature sensor.

本文采用热丝CVD方法和在以石英为衬底的金属钛梳状微电极上制备出的均匀致密、结晶完整的金刚石薄膜,制成了金刚石薄膜热敏器件.对其热敏特性的测试结果表明,该热敏元件具有检测温度范围宽、响应快、灵敏度高、性能稳定等优点.

 
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