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   hot filament chemical 在 物理学 分类中 的翻译结果: 查询用时:0.059秒
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hot filament chemical
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  热丝cvd
    The procedure and technology of Re as interlayer for depositing diamond film on the ferrous alloys substrate were studied by using hot filament chemical vapor deposition(CVD).
    本文采用热丝 C V D 法在以 Cu/ Re 镀膜为过渡层的铁衬底上沉积金刚石薄膜,研究了以 Re 作为铁衬底上沉积金刚石膜的过渡层的制备工艺及其对沉积金刚石膜的影响。
短句来源
  “hot filament chemical”译为未确定词的双语例句
    Study of Glow Discharge Effect on Alignment Growth of Carbon Nanotubes by Negative Bias-enhanced Hot Filament Chemical Vapor Deposition
    辉光放电对负偏压增强热丝化学气相沉积碳纳米管的准直生长作用研究(英文)
短句来源
    MgB_2 superconducting films were in situ grown onsapphire substrates by hot filament chemical vapor deposition.
    用HFCVD法在蓝宝石基片上原位生长了MgB_2超导薄膜。
短句来源
    In this paper,the microstructure and film-substrate interface of diamond film deposited on Si_3N_4-SiC_w,AlN ceramics by hot filament chemical vapor deposition(HFCVD)were investigated by using transition electron microscopy.
    用透射电子显微镜研究了用热丝法在Si_3N_4-SiC_w,AlN陶瓷基材上生长的金刚石薄膜的显微结构和金刚石膜-基片界面。
短句来源
    The influence of N2 and O2 on the facet appearance of diamond has been studiedwith hot filament chemical vapor deposition (HFCVD).
    采用热丝化学气相沉积法(HPCV),研究了N2、O2对金刚石晶形显露的影响。
短句来源
    Abstract  The nucleation and initial growth of diamond on Si(100) by biased hot filament chemical vapor deposition have been studied by scanning electron microscopy,Raman spectra,infrared absorption spectra and X ray photoelectron spectra. After bias pretreated for 15min at -300V and 100mA,the nucleation density was found to be over 10 10 cm -2 on mirror polished Si and was inhomogeneous,which can be divided into three regions on Si surface:A,cones at the edges;
    利用扫描电子显微镜、Raman谱和X射线光电子能谱,研究了Si衬底上热灯丝CVD金刚石膜的核化和早期生长.在-300V和100mA条件下预处理15min,镜面抛光的Si(100)表面上金刚石核密度超过了109cm-2,但是核的分布极不均匀且可分为三个区域:A区,边缘处以锥体为主;
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  hot filament chemical
We studied the use of carbon nanotubes as a seeding layer for the nucleation of diamond on Si (100) substrate by using a hot filament chemical vapor deposition (HFCVD) system.
      
Nucleation of diamond over nanotube coated Si substrate using hot filament chemical vapor deposition (CVD) system
      
A study of diamond synthesis by hot filament chemical vapor deposition on Nc coatings
      
Depositions of hot filament chemical vapor-deposited diamond on cobalt-cemented tungsten carbide (WC-Co) rotary cutting dental burs are presented.
      
For biomedical applications, it is highly desirable to be able to deposit smooth adherent diamond films on various complex-shaped substrates using the hot filament chemical vapor deposition technique (HFCVD).
      
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In the present paper, the relation between diamond nucleation density and synthesis conditions is studied for the diamond thin film synthesized by hot filament chemical vapour deposition method. The experimental results show that the state of substrate surface has the most evident effects on diamond nucleation density. The substrate temperature, filament temperature and distance from filament to substrate surface also have evident effects on diamond nucleation density.

本文研究了用热灯丝化学气相沉积方法在单晶硅衬底上制备金刚石薄膜时其成核密度与制备条件的关系。结果表明,衬底表面状态、衬底温度、灯丝温度、灯丝与衬底表面间距离等对金刚石成核密度有明显的影响,且表面状态的影响最大。

The present paper reports the photoluminecence feature of diamond thin film synthesized on Mo, Si and WC substrates by hot filament Chemical Vapour Deposition method.

本文研究了用热灯丝化学气相沉积方法在硅、钼和碳化钨衬底上制备的金刚石膜的光致发光特性。

In this paper,the microstructure and film-substrate interface of diamond film deposited on Si_3N_4-SiC_w,AlN ceramics by hot filament chemical vapor deposition(HFCVD)were investigated by using transition electron microscopy. The results show that there are a quantity of {111} twins, stacking faults and dislocations in the diamond films : the grain size of diamond on Si_3N_4- SiC_w, substrate is fine, and there are some strip crystal grains growing along the substrate surface. Interface study results manifest...

In this paper,the microstructure and film-substrate interface of diamond film deposited on Si_3N_4-SiC_w,AlN ceramics by hot filament chemical vapor deposition(HFCVD)were investigated by using transition electron microscopy. The results show that there are a quantity of {111} twins, stacking faults and dislocations in the diamond films : the grain size of diamond on Si_3N_4- SiC_w, substrate is fine, and there are some strip crystal grains growing along the substrate surface. Interface study results manifest that there are two kinds of nucleation styles on the film-substrate interface : the one no obvious interface layer, the diamond crystal grows as the cone shaped, some holes leaves between the crystal grains , the another there are obvious interface layer, they grows as the column shaped. Finally,it is pointed out that the increasing of the nucleation density is a method to increase the film to substrate adhesion.

用透射电子显微镜研究了用热丝法在Si_3N_4-SiC_w,AlN陶瓷基材上生长的金刚石薄膜的显微结构和金刚石膜-基片界面。结果表明,金刚石膜内有大量的(111)孪晶,堆垛层错和位错。Si_3N_4-SiC_w基材上的金刚石膜的晶粒细小,有沿基材表面的条纹状的晶粒生长。界面研究表明AlN基材上膜-基界面处有两种形核方式:无明显过渡层时,金刚石晶粒呈锥状生长,晶粒间留有孔洞;有界面过渡层时呈柱状生长。

 
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