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hot filament chemical
相关语句
  热丝cvd
    Intrinsic stress in diamond films growth by hot filament chemical vapor deposition was studied as a function of CH 4 concentration (0 4%~1 2%) and growth temperature (800~1000 ℃).
    研究了热丝CVD法金刚石薄膜本征内应力随甲烷的体积分数(04%~12%)、生长温度(800℃~1000℃)等生长工艺参数的变化关系。
短句来源
    C N thin films have been deposited on si(111) substrate by hot filament Chemical vapour deposition in gas mixture of methane、nitrogen and hydrogen.
    用热丝 CVD法 ,以甲烷、氮气和氢气为气源 ,在 Si( 1 1 1 )衬底上沉积了C- N薄膜。
短句来源
    Effects of Carbon Nanotubes on the Nucleation and Growth of Diamond Films by Hot Filament Chemical Vapor Deposition
    热丝CVD金刚石薄膜制备及碳纳米管形核作用的研究
短句来源
    Uniform diamond thin films with 3″ diameter were grown by hot filament chemical vapor deposition (HFCVD). Graphite electrodes which were located above the filament were applied, and negative bias relative to the filament were also applied during the nucleation stages. In such case,the diamond nucleation density can reach 1010~ 1011/cm2. A very uniform diamond film was grown on the mirror- polished 3″ Si wafer.
    用热丝 CVD的方法在 3英寸的硅衬底上生长均匀的金刚石薄膜, 应用了在热丝上方加石 墨电极,在形核阶段相对于热丝施加一直流负偏压的预处理方法,使金刚石的成核密度达到 1010- 1011/cm2。
短句来源
    The diamond films are deposited at low temperature (550~620℃)using glow plasma HFCVD(hot filament chemical vapor deposition).
    采用直流辉光等离子体助进热丝 CVD的方法 ,低温 ( 5 5 0~ 6 2 0℃ )沉积得到晶态金刚石薄膜 .
短句来源
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  “hot filament chemical”译为未确定词的双语例句
    Influence of microstructure and morphology on electronic properties of diamond films by hot filament chemical vapor deposition
    热灯丝CVD金刚石膜的微结构和形貌对其电子性质的影响(英文)
短句来源
    RECURRENT FUZZY-NEURAL NETWORK CONTROL ON THE SUBSTRATE TEMPERATURE OF THE LARGE-AREA HOT FILAMENT CHEMICAL VAPOR DEPOSITION SYSTEM
    大面积热丝化学气相沉积系统衬底温度自回归模糊神经网络控制技术
短句来源
    Nanocrystalline SiC films have been synthesized on Si(111) substrate by hot filament chemical vapor deposition(HFCVD) technique with CH4 and SiH4 as reaction gases.
    采用热丝化学气相沉积(HFCVD)技术以甲烷(CH4)和硅烷(SiH4)作为源反应气体在Si(111)衬底上合成了纳米晶态SiC薄膜。
短句来源
    Discussed is the influence of pretreatment technology in the course of SiC/Si films of hetero-structure growing on on-axis Si(111) substrate by the method of hot filament chemical vapor deposition (HFCVD).
    讨论了在热丝化学汽相沉积(HFCVD)法沿Si(111)晶面异质生长SiC薄膜的过程中,预处理工艺对SiC成膜的影响。
短句来源
    Discussed is the effect of the carbonization of the substrates on the growing of SiC/Si film on on-axis Si(111) substrates by hot filament chemical vapor deposition (HFCVD).
    讨论了在用热丝化学汽相沉积(HFCVD)法沿Si(111)晶面异质生长SiC薄膜的过程中衬底碳化工艺对SiC成膜的影响。
短句来源
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  hot filament chemical
We studied the use of carbon nanotubes as a seeding layer for the nucleation of diamond on Si (100) substrate by using a hot filament chemical vapor deposition (HFCVD) system.
      
Nucleation of diamond over nanotube coated Si substrate using hot filament chemical vapor deposition (CVD) system
      
A study of diamond synthesis by hot filament chemical vapor deposition on Nc coatings
      
Depositions of hot filament chemical vapor-deposited diamond on cobalt-cemented tungsten carbide (WC-Co) rotary cutting dental burs are presented.
      
For biomedical applications, it is highly desirable to be able to deposit smooth adherent diamond films on various complex-shaped substrates using the hot filament chemical vapor deposition technique (HFCVD).
      
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High quality diamond thin films were grown by hot-filament chemical vapor deposition. The gradational growth and layer by layer structure of diamond thin films, and the relationship between the thickness of films and the deposition timewere studied.

采用热丝化学气相沉积生长出优异的金刚石薄膜。研究了薄膜的分层生长过程,薄膜的层状结构及膜厚随沉积时间的变化特性。

Diamond films have been grown by hot filament chemical vapor deposition on Si substrates. The optical properties of free-standing diamond films were studied by Fourier transform IR spectroscopy. Experimental results indicate that the average IR transmittance range in the wavelength region 6. 25-25μm is 65% The scattering loss caused by the rough surface of as-grown polycrystalline diamond film in the mid-IR region and were reduced by depositing a diamond-like carbon layer.

采用热灯丝化学气相沉积法在硅衬底上沉积出金刚石薄膜,用傅立叶变换红外光谱仪分析独立式金刚石薄膜的红外光谱特性,其结果表明:在6.25μm~25μm波段,平均红外透过率为65%。由于生长的多晶金刚石薄膜粗糙表面,中红外波段出现红外散射损失。镀类金刚石薄膜后,红外散射损失可得到一定程度的改善。

Intrinsic stress in diamond films growth by hot filament chemical vapor deposition was studied as a function of CH 4 concentration (0 4%~1 2%) and growth temperature (800~1000 ℃). The intrinsic stress in the diamond film was tensile. The tensile stress decreased almost linearly with CH 4 concentration, and the minimum tensile stress existed at about 900 ℃. The relationships between stress and growth parameters were explained by the effect of nondiamond phase and crytallite size on the intrinsic stress...

Intrinsic stress in diamond films growth by hot filament chemical vapor deposition was studied as a function of CH 4 concentration (0 4%~1 2%) and growth temperature (800~1000 ℃). The intrinsic stress in the diamond film was tensile. The tensile stress decreased almost linearly with CH 4 concentration, and the minimum tensile stress existed at about 900 ℃. The relationships between stress and growth parameters were explained by the effect of nondiamond phase and crytallite size on the intrinsic stress in the film.

研究了热丝CVD法金刚石薄膜本征内应力随甲烷的体积分数(04%~12%)、生长温度(800℃~1000℃)等生长工艺参数的变化关系。在所研究的工艺参数范围内,金刚石薄膜的本征内应力为拉应力。拉应力值随着碳源浓度的升高近乎呈线性减小;在生长温度为900℃时最小,升高或降低生长温度都会增大。这一变化关系可用薄膜中非金刚石碳含量和晶粒度大小对内应力值的影响进行解释。

 
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