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the band gap
相关语句
  带隙
     HSPICE simulation shows that the temperature coefficient of the bandgap voltage reference is only 1.8 ppm/℃ over the temperature range from-40 ℃ to 125 ℃.
     该电路结构产生的带隙基准电压在-40~125℃范围内使用HSPICE进行仿真,得到的温度系数仅有1.8 ppm/℃。
短句来源
     The average transmittance of the films was higher than 85% in the visible range. The band gap of the Mg0.1Zn0.9O:Al films were about 3.62eV.
     Mg0.1Zn0.9O:Al薄膜的电阻率约为9.0×10-2Ω cm,在可见光范围内平均透过率达到85%,制备薄膜的带隙宽度约为3.62eV。
     The optical transmittance spectrum of Mg0.16Zn0.84O film deposited on sapphire substrate was measured at room temperature with a TV-1900 UV double-beam spectrophotometer, the average transmittance was about 95%. Furthermore the band gap of 3.58mV for Mg0.16Zn0.84O film was estimated.
     用TV1900型双光束紫外可见分光光度计测量了淀积在蓝宝石村底上的Mg0.16Zn0.84O薄膜室温的透射谱,得到可见光区的平均透过率约为95%,进而估算出Mg0.16Zn0.84O薄膜的带隙宽度约为3.58eV.
     Simulation results using Hynix 0.5 μm CMOS Hspice models show that,over a wide range of frequency,the bandgap reference circuit has a noise of 0.5 μV rms,and a CMRR and PSRR of about 70 dB.
     采用Hy-nix 0.5μm CMOS Hspice模型进行仿真,结果表明,此带隙基准电路在较宽的频带范围内,噪声只有0.5μV rms,共模抑制比(CMRR)和电源抑制比(PSRR)为70 dB左右。
短句来源
     Differences exist between BN(5,5) nanotube and zinc blende structure BN: firstly, the band gap of BN(5,5) nanotube increases with pressure with a slope of -0.01795eV/GPa;
     与闪锌矿结构BN比较分析发现两种结构间存在一些性质上的差异:首先,在外压力作用下,BN(5,5)纳米管的带隙随压力增大而减小,变化率为-0·01795eV/GPa,而闪锌矿结构BN随压力增大而增大;
短句来源
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  禁带宽度
     DETERMINING THE BAND GAP OF Ga_xIn_(1-x)As_ySb_(1-y) QUATERNARY ALLOY BY INFRARED ELLIPSOMETRIC SPECTROSCOPY
     红外椭圆偏振光谱研究Ga_xIn_(1-x)As_ySb_(1-y)材料的禁带宽度
短句来源
     The refractive index versus wavelength λ above the band gap for x between x =0.276 and 0.378 was modeled using a Sellmeier dispersion relationship n 2(λ)=a 1+a 2/λ 2+a 3/λ 4+a 4/λ 6.
     禁带宽度之上折射率随波长 λ变化可用 Sellmeier色散关系 n2 (λ) =a1 + a2 / λ2 + a3/ λ4+ a4/ λ6进行拟合 .
短句来源
     The bandgap of the electrode is 1.43eV. The flatband potential of -1.1~-1.2V (VS·SCE)is determined by the measurement of the differential capacitance and the maximum open-circuit photopotential.
     电极的禁带宽度为1.43eV,借微分电容及最大光电位的测定得到平带电位为-1.1~-1.2V(VS.SCE).
短句来源
     The band gap of Mn_ 0.1 Cd_ 0.9 In_2Te_4 ingot is 1.2eV. Maximum of its near infrared transmittance in the range of 10000~2500cm -1 is up to 83% and its middle infrared transmittance in the range of 4000~500cm -1 is from 59% to 65%.
     禁带宽度为 1.2eV的Mn0 .1Cd0 .9In2 Te4 在 10 0 0 0~ 4 0 0 0cm- 1的近红外波数范围内 ,其透过率最高达 83% ,在 4 0 0 0~5 0 0cm- 1的中红外波数范围内透过率为 5 9%~ 6 5 %。
短句来源
     The band gap of (Bi_4Na_4W_5O_(20))~(6+) cluster is 4.1eV, which is corresponding to the experiment data.
     经计算, (Bi4Na4W5O20 )6+团簇的禁带宽度为 4. 1eV,与实际晶体的禁带宽度相符;
短句来源
更多       
  带隙
     HSPICE simulation shows that the temperature coefficient of the bandgap voltage reference is only 1.8 ppm/℃ over the temperature range from-40 ℃ to 125 ℃.
     该电路结构产生的带隙基准电压在-40~125℃范围内使用HSPICE进行仿真,得到的温度系数仅有1.8 ppm/℃。
短句来源
     The average transmittance of the films was higher than 85% in the visible range. The band gap of the Mg0.1Zn0.9O:Al films were about 3.62eV.
     Mg0.1Zn0.9O:Al薄膜的电阻率约为9.0×10-2Ω cm,在可见光范围内平均透过率达到85%,制备薄膜的带隙宽度约为3.62eV。
     The optical transmittance spectrum of Mg0.16Zn0.84O film deposited on sapphire substrate was measured at room temperature with a TV-1900 UV double-beam spectrophotometer, the average transmittance was about 95%. Furthermore the band gap of 3.58mV for Mg0.16Zn0.84O film was estimated.
     用TV1900型双光束紫外可见分光光度计测量了淀积在蓝宝石村底上的Mg0.16Zn0.84O薄膜室温的透射谱,得到可见光区的平均透过率约为95%,进而估算出Mg0.16Zn0.84O薄膜的带隙宽度约为3.58eV.
     Simulation results using Hynix 0.5 μm CMOS Hspice models show that,over a wide range of frequency,the bandgap reference circuit has a noise of 0.5 μV rms,and a CMRR and PSRR of about 70 dB.
     采用Hy-nix 0.5μm CMOS Hspice模型进行仿真,结果表明,此带隙基准电路在较宽的频带范围内,噪声只有0.5μV rms,共模抑制比(CMRR)和电源抑制比(PSRR)为70 dB左右。
短句来源
     Differences exist between BN(5,5) nanotube and zinc blende structure BN: firstly, the band gap of BN(5,5) nanotube increases with pressure with a slope of -0.01795eV/GPa;
     与闪锌矿结构BN比较分析发现两种结构间存在一些性质上的差异:首先,在外压力作用下,BN(5,5)纳米管的带隙随压力增大而减小,变化率为-0·01795eV/GPa,而闪锌矿结构BN随压力增大而增大;
短句来源
更多       
  “the band gap”译为未确定词的双语例句
     The results showed that the bandgap widths of TiO2 and TiO2/SnO2 were 4.13 and 3.86 eV, respectively.
     结果显示:TiO2和TiO2/SnO2的能带宽度分别为4.13和3.86 eV,表现出量子尺寸效应;
短句来源
     CALCULATION OF THE BANDGAP NARROWING DUE TO HEAVY DOPING IN p-TYPE STRAINED Si_(1-x)Ge_x LAYERS
     p型Si_(1-x)Ge_x应变层中重掺杂禁带窄变的计算
短句来源
     The band gap of the CdS films becomes narrower from 2.51eV for as grown sample to 2.40 eV for annealed one, which is near to 2.42eV for CdS single crystal.
     退火使CdS薄膜的光能隙从刚沉积的2.51ev减小到2.40eV左右,接近CdS单晶的值(2.42eV)。
短句来源
     The testing results show the band gap, the resistivity and the breakdown electric field of the films are 6.2 eV, 2×10 13 Ω·cm and 3×10 6 V·cm -1 respectively.
     分析表明薄膜是具有高取向性的AlN(100)多晶膜,薄膜的能带间隙约为6.2eV,其电阻率和击穿电场分别为2×1013Ω·cm和3×106V·cm-1。
短句来源
     Because the band gap is very narrow in visible light band, we have to pile up several stacks of low and high index film systems with the finalstructure of ( H1L1) 5 ( H2L2) 5 ( H3L3) 5H, which gets good effects in practice.
     由于在可见光波段,禁带比较窄,为获得一个较宽的禁带,我们采用几个膜堆迭加的结构,即结构为(H_1L_1)~5(H_2L_2)~5(H_3L_3)~5H的膜系,并取得较好的效果。
短句来源
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  the band gap
The band gap of KTN nanoparticles is determined to be 3.26 eV from the optical absorption spectra.
      
Second, the luminescence from the molecular terms with energies higher than the energy corresponding to the band gap or the work function of the glass is quenched through the transfer of electronic excitations to the glass network.
      
The mechanism of the effect observed implies that, upon double or triple excitation by photons with energies less than the band gap, the energy of an Er3+ ion becomes sufficiently high for interband generation of free carriers.
      
The main contribution to a considerable decrease in the band gap is made by a shift of states at the Γ point.
      
It is demonstrated that the electrical inactivity of tin and iron impurity ions is caused by the compensating effect of Ga+ and In+ ions, which are responsible for the fixed position of the Fermi level at the midpoint of the band gap.
      
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The energy bands of the zinc blende structure are treated by the simplified LCAO method of Slater and Koster. A model of the chemical bond is proposed for the purpose that the matrix elements involved may be expressed in terms of certain parameters of the chemical bonds. The energy levels of a number of points in the Brillouin zone are investigated. With this approach, we discuss the variation of the band gap as well as the position shift of the conduction band edge with the change of chemical compositions....

The energy bands of the zinc blende structure are treated by the simplified LCAO method of Slater and Koster. A model of the chemical bond is proposed for the purpose that the matrix elements involved may be expressed in terms of certain parameters of the chemical bonds. The energy levels of a number of points in the Brillouin zone are investigated. With this approach, we discuss the variation of the band gap as well as the position shift of the conduction band edge with the change of chemical compositions.

本文在Slater与Koster的简化原子轨道线性组合方法的基础上,引入了化学键的参量。将布里渊区的某些特殊点的能级表示为这些参量的函数。讨论了禁带宽度与导带最小点之位置随化学组成的变化而变化的情况。得到的结果与已有事实定性符合。

The rotational relaxation of the GaAs (110) surface is considered. A cluster model is used for simulating the crystal surface, and some quasi atoms are added in order to saturate the dangling bonds in the cluster boundary. The stable relaxation geometry of the GaAs (110) surface is determined by minimizing the total energy of the cluster calculated by the Extended Huckel Method. According to the calculation a value of 18° for the tilted angle of the surface bond is suggested, it is in fairly good agreement with...

The rotational relaxation of the GaAs (110) surface is considered. A cluster model is used for simulating the crystal surface, and some quasi atoms are added in order to saturate the dangling bonds in the cluster boundary. The stable relaxation geometry of the GaAs (110) surface is determined by minimizing the total energy of the cluster calculated by the Extended Huckel Method. According to the calculation a value of 18° for the tilted angle of the surface bond is suggested, it is in fairly good agreement with that given by the partial yield photoelectron spectroscopy. The density of states for the cluster is also calculated, it is shown that for this relaxation model there is no empty cation state existing within the band gap.

本文研究GaAs(110)面旋转弛豫的电子结构,采用一个原子集团来模拟GaAs(110)面,在其内边界上用一些“类Ga”和“类As”原子来钝化伸向体内的悬挂键,以消除由于有限模型而引起的多余边界效应。用EHT方法计算集团的总能量,由能量极小定出GaAs(110)面最稳定的弛豫位置为表面旋转角ω=18°,表面Ga原子向体内下降0.33,As原子上升0.13,这与Pandey等人从光电子部分产额谱所得的结果基本一致。本文还计算了理想和弛豫的GaAs(110)面的态密度,发现对于理想的(110)面禁带中确实存在一个空的表面峰。弛豫后,该峰向上移动进入导带,禁带中不再出现表面峰,与实验结果相符。

The band structures of ten semiconductors of A,AB and AB2 types have been calculated by LCBO MO method. The results showed that the band gaps Eg can generally be expressed as a linear function of the bond energy and the resonance integrals between the neighbouring bonds, irrespective of the covalent structural types of the semiconductors. This provides a theoretical background for the empirical expressions between Eg and some properties of the chemical bonds reported in the literature.

本文用LCBO MO法计算了属于元素半导体和AB型、AB_2型化合物半导体的十种共价结构的能带。所得结果说明:它们的禁带宽度Eg都可统一地表为键能和邻键间共轭积分的线性函数,与共价结构的形式无关。给出许多文献用键性质归纳Eg数值规律的理论基础。

 
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