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metal-semiconductor     
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  金属-半导体
     MICROSCOPIC STRUCTURE OF METAL-SEMICONDUCTOR Pt/TiO_2 CATALYST SURFACE
     金属-半导体催化剂Pt/TiO_2的表面微观结构
短句来源
     METAL-SEMICONDUCTOR TRANSITION AND SUPERCONDUCTIVITY IN La-Ba-Cu-O SYSTEM
     Ba-La-Cu-O体系的金属-半导体转变和超导电性
短句来源
     A STUDY OF METAL-SEMICONDUCTOR CATALYST:HYDROGEN SPILLOVER ON Pt/SnO_2 AT ROOM TEMPERATURE
     金属-半导体催化剂的研究Pt/SnO_2上氢的室温溢流
短句来源
     THE ELECTRONIC STRUCTURE OF METAL-SEMICONDUCTOR LUCS
     金属-半导体多层超薄共格结构(LUCS)的电子结构
短句来源
     It is found that the resistivity of La0.67Sr0.33-xAgxMnO3 without Fe3O4 is small, and there is a metal-semiconductor transition of the electricity transport property in this temperature region;
     我们发现纯La0.67Sr0.33-xAgxMnO3的电阻率很小,在给定的温区出现电输运性质的金属-半导体转变;
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  金属半导体
     In contrast to that for LCMO films,the metal-semiconductor transition temperature (TMS) for LCMO/YBCO/LCMO films is enhanced and strongly depends on the YBCO layer thickness.
     与LCMO单层膜相比,三层薄膜的金属半导体转变温度(TMS)被提高并且强烈依赖于YBCO层的厚度.
短句来源
     This thesis expatiates all the physics of the SiC ohmic contacts models, which have been developed by experiments, include metal-semiconductor schottky contact theory, Nn heterojunction and nn+ theory.
     本文从金属半导体接触的实验过程入手,阐述了本文所建立的SiC欧姆接触模型所涉及到的半导体器件物理理论,包括金属半导体肖特基接触理论、Nn异质结理论和nn~+理论。
短句来源
     Alloying was typically at a temperature 150℃--450℃ for 10 min. The best alloying temperature is 220℃ and contact resistivity exhibited about 6.7× 10-4Ω cm2. The interfaces of the metal-semiconductor have been studied by AES and XRD. We discussed the correllation between the contact resistivities and microstructures.
     研究了Ag/AuGeNi/n-GaSb在150℃一450℃下合金处理对欧姆接触的影响,最佳合金温度为220℃,此时接触电阻率为6.7×1O-‘Ωcm‘。用AES和XRD研究了金属半导体界面处的扩散及物相变化,并讨论了接触电阻率与微结构的关系。
短句来源
     Schottky Barrier Diode (SBD) is based on the rectification characteristics of metal-semiconductor contact.
     肖特基势垒二极管是利用金属半导体的整流接触特性而制成的二极管。
短句来源
     Review was made on GaN based wide gap semiconductor material and devices,especially for p-type material manufacture,metal-semiconductor contact,material etching,etc.
     对GaN基宽禁带紫外探测器材料体系的研究进展进行了回顾,重点介绍了p型材料的制备、金属半导体接触、材料的蚀刻等。
短句来源
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  金属—半导体
     It is found that an external magnetic field can induce the change of the energy gaps resulting in the metal-semiconductor continuous transition with magnetic flux Φ in a period Φ = Φ0 (h/e) for the perfect chiral SWNTs and type I and type II TCNTs, this is obvious AB effect.
     深入研究发现:完善的手性SWNTs和第Ⅰ、Ⅱ类TCNTs的能隙随外磁场变化出现以φ=φ_0(h/e)为周期的金属—半导体连续转变现象,这是明显的AB效应;
短句来源
     As the most important SiC devices, SiC field-effect transistors such as metal-semiconductor field-effect transistor (MESFET )and metal-oxide-semiconductor field-effect transistor (MOSFET) and the complementary-metal-oxide-semiconductor (CMOS ) inverter using MOSFET have been granted with considerable attention and intensively investigated.
     作为最重要的SiC器件,SiC场效应器件(主要指SiC金属—半导体场效应晶体管,MESFET和金属—氧化物—半导体场效应晶体管,MOSFET)以及基于MOS技术的SiC CMOS电路更是受到了广泛的关注。
短句来源
     This paper develops the theory of vacancies near a metal-semiconductor interface within a tight-binding model.
     本文用紧束缚模型发展了金属—半导体界面附近的空位理论。
短句来源
     THE ELECTRONICAL STATES OF THE VACANCY NEAR A METAL-SEMICONDUCTOR INTERFACE
     金属—半导体界面附近的空位电子态
短句来源
     Schottky Capacitance Spectroscopy Technique for Heasuring Metal-Semiconductor Interface States
     测量金属—半导体界面态的肖特基电容谱技术
短句来源
更多       
  半导体-金属
     SUPERCONDUCTIVITY AND METAL-SEMICONDUCTOR TRANSITION IN La-Sr-Cu-O SYSTEM
     La-Sr-Cu-O体系的半导体-金属转变和超导电性
短句来源
     The major conclusions include: (1) La_2NiO_4 thin film exists metal-semiconductor transition. Its very low resistance-temperature coefficient from 400℃ to 800℃ is deal to the metallic conductivity at this temperature range.
     结果表明:(1) La_2NiO_4薄膜具有半导体-金属转变的导电性,在400~800℃为金属导电性,具有非常稳定的电阻-温度稳定性。
短句来源
     And resistance-temperature performance of VO_2/LAS composite test was found a sharp decrease of the resistivity from room temperature to 100(°C),which was believed due to the metal-semiconductor phase transition.
     将VO2与LAS玻璃复合烧结成陶瓷,对其进行阻温测试,结果表明:在室温至100°C间复合陶瓷电阻急骤下降,这是由VO2的半导体-金属相变效应引起的。
短句来源

 

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  metal-semiconductor
The electronic properties of SWCNTs can be modified by adsorbate atoms and metal-semiconductor and semiconductor-semi-conductor transitions can be achieved by the doping of alkali atoms.
      
It was assumed that irradiation enhances the metal-semiconductor phase transition on the VO2-δ surface during the chemical reaction.
      
It is shown that intimate metal-semiconductor contact provides low values of the contact resistance.
      
It is concluded that the resultant silicon-surface restructuring provides a lower contact resistance, more intimate metal-semiconductor contact, and better BJT parameter values.
      
An interpretation of the experimental data on the metal-semiconductor phase transition in vanadium dioxide is given on the basis of the results obtained.
      
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The excitonic superconductor proposed by Allender, Bray and Bardeen is a kind of Layered Ultrathin Coherent Structure (LUCS) composed of metal and semiconductor layers. In a previous work, we have studied the electronic structure of a metalme-tal LUCS in the tight binding approximation. We present here the result of a similar study of a metal-semiconductor LUCS, with the hope that it may be helpful to more detailed further investigations of the ABB model of superconductivity.

Allender,Bray和Bardeen建议的激子超导体是由金属和半导体构成的一种多层超薄共格结构(LUCS)。我们曾经在紧束缚近似下,用格林函数技术,研究了金属-金属LUCS的电子结构。本文是按相似的方法对于金属-半导体LUCS进行的计算和结果。所获得的电子结构可有助于详细地研究ABB模型的超导体。

Molecular Beam Epitaxy (MBE) technique, based on its unique features, has been in several respects developing spectacularly in the recent decade. Six basic aspects of MBE are reviewed in this article. the current level of MBE material (GaAs. Si and InGaAsP etc.) can be compared with LPE's and VPE's. The study of MBE reaction kinetics is developing on to study ternary and quarternary alloys. It is necessary to solve the problem of doping for fabricating device-grade MBE material. Until recently Si and Be are...

Molecular Beam Epitaxy (MBE) technique, based on its unique features, has been in several respects developing spectacularly in the recent decade. Six basic aspects of MBE are reviewed in this article. the current level of MBE material (GaAs. Si and InGaAsP etc.) can be compared with LPE's and VPE's. The study of MBE reaction kinetics is developing on to study ternary and quarternary alloys. It is necessary to solve the problem of doping for fabricating device-grade MBE material. Until recently Si and Be are the favored dopants for MBE n-type and p-type GaAs respectively. A number of microwave devices, lasers and photo-electronical devices have been successfully fabricated with MBE technigue. Threshold current density of MBE GaAs/AlGaAs DH laser which has been obviously improved can compare with the flowest level of LPE's. The study of MBE metal-semiconductor and insulator-semiconductor heterojunction, the study of their property, as well as the surface study of MBE film have been developed. Two series of superlattice of GaAs/AlGaAs and InAs/GaSb are described. Modulating of doping structure opens up a new field for developing twodemension electronics.

近十年来,分子束外延技术(简称MBE)以其独特的优点在多方面取得了令人注目的发展。本文从六个方面讨论了MBE技术目前的发展情况。MBE GaAs、Si和InGaAsP等材料的水平已可与VPE和LPE的相比。MBE生长动力学的研究已进展到对三元,四元混晶进行研究。研制器件级材料必须解决掺杂问题,Be和Si分别是MBE GaAs比较好的P型和N型掺杂剂。MBE已成功地研制出多种微波、激光和光电器件,GaAs/AlGaAs双异质结激光器的阈电流密度已降低到可和LPE的最低值相比。MBE金属-半导体,绝缘体-半导体异质结及其界面特性的研究和MBE薄膜表面的研究都有所发展。讨论了GaAs/GaAlAs和InAs/Gasb二个系列的超晶格。调制掺杂结构开辟了发展二维电子学的新途径。

Recently much attention has been paid to the study in blue LEDs of ZnS. In order to make efficient LEDs of ZnS, a basic problem, i.e.the reproducible preparation of low-resistivity bulk materials must be solved.In this paper, we present a method to produce low-resistivity ZnS:I crystals end discuss the influence of iodine concentration in ZnS:I crystals on annealing condition.ZnS single crystals studied in this work were grown by I-chemical vapor transport.The crystals were cut into slices 1.5mm thick.After...

Recently much attention has been paid to the study in blue LEDs of ZnS. In order to make efficient LEDs of ZnS, a basic problem, i.e.the reproducible preparation of low-resistivity bulk materials must be solved.In this paper, we present a method to produce low-resistivity ZnS:I crystals end discuss the influence of iodine concentration in ZnS:I crystals on annealing condition.ZnS single crystals studied in this work were grown by I-chemical vapor transport.The crystals were cut into slices 1.5mm thick.After chemical cleaning and etching, they were heated in a molten mixture of Zr-Al (1.5-2%) in a sealed quartz ampoule which was coated by careen film for 40-100 hours at 950℃ and then were quenched immediately in cold water.Both faces of samples were lightly polished and toiled in a solution of 25% NaOH-in-H2O for 30-60sec and then washed in hot deionized water.The chmic contacts were made by heating In-Ga alloy in N2 flow at 400℃ for 5-10 min. The resistivity of samples were mesured by Van der Pauw method of from I-V characteristics.ZnS: I crystals usually shew different bulk colour. According to difference of the bulk colour,ZnS:I crystals can be divided into three kincis:A--Colourless and transparent;B--Yellowish and C--Yellow.Chemical analysis shows that their I concentration is 45,100 and 130 ppm respectively.It is identified that the bulk colour of crystals is correlated with iodine concentration in the crystals. The higher the iodine concentration,the darker the bulk colour.It is found that different annealing conditions are needed for ZnS:I crystals with different bulk colour in order to obtain the same resistivity.Having taken suitable annealing condition,Al concentration in ZrS:I crystals can be controled at the order of 10-3g/g and the resistivity of ZnS: I slices can be reduced down to 10-102 .cm.The MS(metal-semiconductor) junction made by the low-resistivity ZnS crystals can produce blue EL. The emission peak is located at about 4500A at room temperature. Finally,the influence of iodine on Al diffusion was discussed by means of volume compensation principle.In general,iodine ions enter into ZnS crystals at the substitution site and yet the ion radius of iodine is bigger than sulphur ion. On the other hand,aluminum ion is smaller than zinc ion. So Al ions occupy more easily those vacancies which are the nearest neighbors of the iodine ions during annealing.That is,doping of iodine ion may influence on Al ion diffusion to a certain degree. Therefore under the same annealing conditions, for a higher iodine concentration in ZnS crystals,a large amount of Al can be incorporated in the lattice.It is concluded that the diffusion of Al impurity have not only a connection with annealing condition and Zn-Al alloy composition but also with the iodine concentration in ZnS crystals. Different annealing conditions are needed for ZnS: I crystals with different iodine concentration(i.e. different bulk collour) o obtain same low resistivities.

本文叙述了对碘化学输运法生长的ZnS:I单晶扩散Al杂质,制备低阻ZnS:I晶体的实验方法。在制备低阻ZnS:I单晶过程中,根据晶体内含I的浓度选择热退火条件,可较重复地得到Al浓度在10~(-1)g/g量级,电阻率在10—10~2Ω·cm范围的低阻ZnS单晶。讨论认为,在ZnS:I单晶退火过程中,I的存在有助于Al杂质的扩散。

 
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