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metal-semiconductor
相关语句
  金属-半导体
    THE ELECTRONIC STRUCTURE OF METAL-SEMICONDUCTOR LUCS
    金属-半导体多层超薄共格结构(LUCS)的电子结构
短句来源
    METAL-SEMICONDUCTOR TRANSITION AND SUPERCONDUCTIVITY IN La-Ba-Cu-O SYSTEM
    Ba-La-Cu-O体系的金属-半导体转变和超导电性
短句来源
    Theoretical Calculation of B arrier Height of Metal-semiconductor Contacts
    金属-半导体接触势垒高度的理论计算
短句来源
    A METHOD TO DETERMINE THE SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR CONTACT——CIRCULAR RING STRUCTURE METHOD
    金属-半导体比接触电阻的圆环结构测试法
短句来源
    Formation mechanism of interface charges in the metal-semiconductor superlattices
    金属-半导体超晶格中界面电荷的生成机理
短句来源
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  半导体-金属
    SUPERCONDUCTIVITY AND METAL-SEMICONDUCTOR TRANSITION IN La-Sr-Cu-O SYSTEM
    La-Sr-Cu-O体系的半导体-金属转变和超导电性
短句来源
  “metal-semiconductor”译为未确定词的双语例句
    THE METAL-SEMICONDUCTOR TRANSITION AND ITS EFFECT ON SUPERCONDUCTIVITY OF Y-Ba-Cu-O FILMS PREPARED BY OHM HEATING CO-EVAPORATION
    欧姆加热共蒸Y-Ba-Cu-O薄膜的金属-非金属转变及其对超导电性的影响
短句来源
    THE n-TYPE METAL-SEMICONDUCTOR In/Nb-SrTiO_-3 SCHOTTKY BARRIER DIODES
    n型掺杂半导体In/Nb-SrTiO_3金属异质结变温J~V特性的研究
短句来源
    VO_2 is a kind of metallic oxide which undergoes a metal-semiconductor phase transition near 68℃.
    二氧化钒(VO_2)是一种具有热致相变特性的金属氧化物,随着温度升高,大约在68℃附近,发生从非金属(或半导体)到金属的性质突变。
短句来源
    METAL OVERLAYER THICKNESS EFFECTS ON THE PROPERTIES OF A METAL-SEMICONDUCTOR INTERFACE
    金属层厚对金属—半导体界面性质的影响
短句来源
    A transport property of thin film was determined using a four-probe method, and the temperature dependence of resistance shows semiconducting behavior, and no metal-semiconductor transition temperature Tp of the films in the temperature range of 77K-400 K.
    LCSMO薄膜的电阻-温度变化曲线表明该样品具有负磁阻效应,且在液氮温度以上呈现类半导体特性。 推测该样品的金属-绝缘体转变温度TP可能在77K以下。
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  metal-semiconductor
The electronic properties of SWCNTs can be modified by adsorbate atoms and metal-semiconductor and semiconductor-semi-conductor transitions can be achieved by the doping of alkali atoms.
      
It was assumed that irradiation enhances the metal-semiconductor phase transition on the VO2-δ surface during the chemical reaction.
      
It is shown that intimate metal-semiconductor contact provides low values of the contact resistance.
      
It is concluded that the resultant silicon-surface restructuring provides a lower contact resistance, more intimate metal-semiconductor contact, and better BJT parameter values.
      
An interpretation of the experimental data on the metal-semiconductor phase transition in vanadium dioxide is given on the basis of the results obtained.
      
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The excitonic superconductor proposed by Allender, Bray and Bardeen is a kind of Layered Ultrathin Coherent Structure (LUCS) composed of metal and semiconductor layers. In a previous work, we have studied the electronic structure of a metalme-tal LUCS in the tight binding approximation. We present here the result of a similar study of a metal-semiconductor LUCS, with the hope that it may be helpful to more detailed further investigations of the ABB model of superconductivity.

Allender,Bray和Bardeen建议的激子超导体是由金属和半导体构成的一种多层超薄共格结构(LUCS)。我们曾经在紧束缚近似下,用格林函数技术,研究了金属-金属LUCS的电子结构。本文是按相似的方法对于金属-半导体LUCS进行的计算和结果。所获得的电子结构可有助于详细地研究ABB模型的超导体。

The current-voltage (I-V) characteristics of heavily doped n-GaAs metal-thin insulator (102 (?))-semiconductor barrier diodes can not be described by classical theory of metal-semiconductor contacts. It is necessary to modify the theory by assuming: (1) the electrons pass through the barrier of interface layer by tunnelling, resulting in transmission coefficient P; (2) at reverse bias, the effective barrier height alters due to the presence of interface layer and states and changes with variation of voltage;...

The current-voltage (I-V) characteristics of heavily doped n-GaAs metal-thin insulator (102 (?))-semiconductor barrier diodes can not be described by classical theory of metal-semiconductor contacts. It is necessary to modify the theory by assuming: (1) the electrons pass through the barrier of interface layer by tunnelling, resulting in transmission coefficient P; (2) at reverse bias, the effective barrier height alters due to the presence of interface layer and states and changes with variation of voltage; (3) at forward bias, the effects of interface layer are embodied in ideality factor n. The I-V and I-1/T expressions (table 1) derived from the modified theory are in good agreement with experimental results. The relationship between transmission coefficient and effective barrier height increasing is also discussed.

在金属-高掺杂nGaAs之间加入薄氧化层(约10~2A)后,器件的I-V特性不再能用经典的金属-半导体接触理论来描述,而必须计入如下修正:电子由量子力学中的隧道效应穿过界面层势垒,由此引进透射系数P;反向偏置时,有效势垒高度因界面层及界面态的存在而有所改变,并且随外加电压而变化;正向偏置时,界面层的影响可以用理想因子n来描述。经过上述修正后推得的理论I-V,I-1/T关系式(表1)与实测曲线符合较好。文中讨论了透射系数与有效势垒高度提高的关系。

UPS and XPS spectra of silver film (from 0.05(?) to 1000(?)) on GaAs (110) cleavedsurface have been measured at hv=21.2eV,40.8eV,and 1486.6eV.The variationsof Ga3d,As3d,Ag3d,d-band,and valence band of Ag on GaAs with increasingthe thickness of silver film have been analyzed.Information about the Fermilevel pinning,the intermixing at the interface of metal-semiconductor,the Fermiedge and the band structure of thin Ag film,and a maximum of the relationbetween the intensity of d-band UPS and the thickness...

UPS and XPS spectra of silver film (from 0.05(?) to 1000(?)) on GaAs (110) cleavedsurface have been measured at hv=21.2eV,40.8eV,and 1486.6eV.The variationsof Ga3d,As3d,Ag3d,d-band,and valence band of Ag on GaAs with increasingthe thickness of silver film have been analyzed.Information about the Fermilevel pinning,the intermixing at the interface of metal-semiconductor,the Fermiedge and the band structure of thin Ag film,and a maximum of the relationbetween the intensity of d-band UPS and the thickness of Ag film has beenobtained,showing some similarities and some differences to the results of othermetal films on GaAs.

在三种光波长(光子能量=21.2eV、40.8eV、1486.6eV)下,测量了GaAs(110)解理面上较广的膜厚范围(0.05—1000(?))Ag 膜的紫外光电子能谱和X 射线光电子能谱。分析了Ga3d 峰,As3d 峰、Ag3d 峰、d 带和价带结构随膜厚增加的变化,得到关于费米能级钉扎、半导体一金属界面处的混杂、金属薄膜的费米边和能带结构、d 带紫外光电子谱强度随膜厚增加出现的极大点等的结果,显示出银膜与其他金属膜的一些异同。

 
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