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metal-semiconductor    
相关语句
  金属-半导体
    Specific Contact Resistance of Metal-Semiconductor Ohmic Contact
    金属-半导体欧姆接触的接触电阻率
短句来源
    A MEASUREMENT METHOD OF METAL-SEMICONDUCTOR CONTACT RESISTANCE
    测定金属-半导体接触电阻的一种方法
短句来源
    On the Measurement of Metal-Semiconductor Contact Resistance in Integrated Circuits
    集成电路中金属-半导体接触电阻的测试
短句来源
    Direct Tunneling Effect in Metal-Semiconductor Contacts Simulated with Monte Carlo Method
    蒙特卡罗方法模拟金属-半导体接触的直接隧穿效应(英文)
短句来源
    Average-Bond-Energy and Fermi Level on Metal-Semiconductor Contacts
    金属-半导体超晶格中的金属费米能级和半导体平均键能
短句来源
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  金属半导体
    This thesis expatiates all the physics of the SiC ohmic contacts models, which have been developed by experiments, include metal-semiconductor schottky contact theory, Nn heterojunction and nn+ theory.
    本文从金属半导体接触的实验过程入手,阐述了本文所建立的SiC欧姆接触模型所涉及到的半导体器件物理理论,包括金属半导体肖特基接触理论、Nn异质结理论和nn~+理论。
短句来源
    Schottky Barrier Diode (SBD) is based on the rectification characteristics of metal-semiconductor contact.
    肖特基势垒二极管是利用金属半导体的整流接触特性而制成的二极管。
短句来源
    Alloying was typically at a temperature 150℃--450℃ for 10 min. The best alloying temperature is 220℃ and contact resistivity exhibited about 6.7× 10-4Ω cm2. The interfaces of the metal-semiconductor have been studied by AES and XRD. We discussed the correllation between the contact resistivities and microstructures.
    研究了Ag/AuGeNi/n-GaSb在150℃一450℃下合金处理对欧姆接触的影响,最佳合金温度为220℃,此时接触电阻率为6.7×1O-‘Ωcm‘。用AES和XRD研究了金属半导体界面处的扩散及物相变化,并讨论了接触电阻率与微结构的关系。
短句来源
    More attention has been paid to ultra-thin metal-semiconductor films due to its extensive and potential application in microelectronics.
    由于超薄金属半导体薄膜在微电子领域具有广泛应用前景,因而对它的研究也越来越深入。
短句来源
    In consideration of semiconductor ceramic sensitive elements, the surface absorption layer and energy band structure of the semiconductor ceramic electrode ohm contact are analyzed by using the principle of metal-semiconductor ohm contact.
    针对半导瓷敏感元件 ,应用金属半导体欧姆接触原理 ,分析了半导瓷电极欧姆接触的表面吸附层和能带结构 ;
短句来源
更多       
  金属半导体
    This thesis expatiates all the physics of the SiC ohmic contacts models, which have been developed by experiments, include metal-semiconductor schottky contact theory, Nn heterojunction and nn+ theory.
    本文从金属半导体接触的实验过程入手,阐述了本文所建立的SiC欧姆接触模型所涉及到的半导体器件物理理论,包括金属半导体肖特基接触理论、Nn异质结理论和nn~+理论。
短句来源
    Schottky Barrier Diode (SBD) is based on the rectification characteristics of metal-semiconductor contact.
    肖特基势垒二极管是利用金属半导体的整流接触特性而制成的二极管。
短句来源
    Alloying was typically at a temperature 150℃--450℃ for 10 min. The best alloying temperature is 220℃ and contact resistivity exhibited about 6.7× 10-4Ω cm2. The interfaces of the metal-semiconductor have been studied by AES and XRD. We discussed the correllation between the contact resistivities and microstructures.
    研究了Ag/AuGeNi/n-GaSb在150℃一450℃下合金处理对欧姆接触的影响,最佳合金温度为220℃,此时接触电阻率为6.7×1O-‘Ωcm‘。用AES和XRD研究了金属半导体界面处的扩散及物相变化,并讨论了接触电阻率与微结构的关系。
短句来源
    More attention has been paid to ultra-thin metal-semiconductor films due to its extensive and potential application in microelectronics.
    由于超薄金属半导体薄膜在微电子领域具有广泛应用前景,因而对它的研究也越来越深入。
短句来源
    In consideration of semiconductor ceramic sensitive elements, the surface absorption layer and energy band structure of the semiconductor ceramic electrode ohm contact are analyzed by using the principle of metal-semiconductor ohm contact.
    针对半导瓷敏感元件 ,应用金属半导体欧姆接触原理 ,分析了半导瓷电极欧姆接触的表面吸附层和能带结构 ;
短句来源
更多       
  金属一半导体
    This paper develops the theory of vacancies near a metal-semiconductor interface with-in a tight-binding model.
    本文用紧束缚模型发展了金属一半导体界而附近的空位理论.研究结果发现:空位对它附近区域的态密度有一定影响;
短句来源

 

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  metal-semiconductor
The electronic properties of SWCNTs can be modified by adsorbate atoms and metal-semiconductor and semiconductor-semi-conductor transitions can be achieved by the doping of alkali atoms.
      
It was assumed that irradiation enhances the metal-semiconductor phase transition on the VO2-δ surface during the chemical reaction.
      
It is shown that intimate metal-semiconductor contact provides low values of the contact resistance.
      
It is concluded that the resultant silicon-surface restructuring provides a lower contact resistance, more intimate metal-semiconductor contact, and better BJT parameter values.
      
An interpretation of the experimental data on the metal-semiconductor phase transition in vanadium dioxide is given on the basis of the results obtained.
      
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Molecular Beam Epitaxy (MBE) technique, based on its unique features, has been in several respects developing spectacularly in the recent decade. Six basic aspects of MBE are reviewed in this article. the current level of MBE material (GaAs. Si and InGaAsP etc.) can be compared with LPE's and VPE's. The study of MBE reaction kinetics is developing on to study ternary and quarternary alloys. It is necessary to solve the problem of doping for fabricating device-grade MBE material. Until recently Si and Be are...

Molecular Beam Epitaxy (MBE) technique, based on its unique features, has been in several respects developing spectacularly in the recent decade. Six basic aspects of MBE are reviewed in this article. the current level of MBE material (GaAs. Si and InGaAsP etc.) can be compared with LPE's and VPE's. The study of MBE reaction kinetics is developing on to study ternary and quarternary alloys. It is necessary to solve the problem of doping for fabricating device-grade MBE material. Until recently Si and Be are the favored dopants for MBE n-type and p-type GaAs respectively. A number of microwave devices, lasers and photo-electronical devices have been successfully fabricated with MBE technigue. Threshold current density of MBE GaAs/AlGaAs DH laser which has been obviously improved can compare with the flowest level of LPE's. The study of MBE metal-semiconductor and insulator-semiconductor heterojunction, the study of their property, as well as the surface study of MBE film have been developed. Two series of superlattice of GaAs/AlGaAs and InAs/GaSb are described. Modulating of doping structure opens up a new field for developing twodemension electronics.

近十年来,分子束外延技术(简称MBE)以其独特的优点在多方面取得了令人注目的发展。本文从六个方面讨论了MBE技术目前的发展情况。MBE GaAs、Si和InGaAsP等材料的水平已可与VPE和LPE的相比。MBE生长动力学的研究已进展到对三元,四元混晶进行研究。研制器件级材料必须解决掺杂问题,Be和Si分别是MBE GaAs比较好的P型和N型掺杂剂。MBE已成功地研制出多种微波、激光和光电器件,GaAs/AlGaAs双异质结激光器的阈电流密度已降低到可和LPE的最低值相比。MBE金属-半导体,绝缘体-半导体异质结及其界面特性的研究和MBE薄膜表面的研究都有所发展。讨论了GaAs/GaAlAs和InAs/Gasb二个系列的超晶格。调制掺杂结构开辟了发展二维电子学的新途径。

Recently much attention has been paid to the study in blue LEDs of ZnS. In order to make efficient LEDs of ZnS, a basic problem, i.e.the reproducible preparation of low-resistivity bulk materials must be solved.In this paper, we present a method to produce low-resistivity ZnS:I crystals end discuss the influence of iodine concentration in ZnS:I crystals on annealing condition.ZnS single crystals studied in this work were grown by I-chemical vapor transport.The crystals were cut into slices 1.5mm thick.After...

Recently much attention has been paid to the study in blue LEDs of ZnS. In order to make efficient LEDs of ZnS, a basic problem, i.e.the reproducible preparation of low-resistivity bulk materials must be solved.In this paper, we present a method to produce low-resistivity ZnS:I crystals end discuss the influence of iodine concentration in ZnS:I crystals on annealing condition.ZnS single crystals studied in this work were grown by I-chemical vapor transport.The crystals were cut into slices 1.5mm thick.After chemical cleaning and etching, they were heated in a molten mixture of Zr-Al (1.5-2%) in a sealed quartz ampoule which was coated by careen film for 40-100 hours at 950℃ and then were quenched immediately in cold water.Both faces of samples were lightly polished and toiled in a solution of 25% NaOH-in-H2O for 30-60sec and then washed in hot deionized water.The chmic contacts were made by heating In-Ga alloy in N2 flow at 400℃ for 5-10 min. The resistivity of samples were mesured by Van der Pauw method of from I-V characteristics.ZnS: I crystals usually shew different bulk colour. According to difference of the bulk colour,ZnS:I crystals can be divided into three kincis:A--Colourless and transparent;B--Yellowish and C--Yellow.Chemical analysis shows that their I concentration is 45,100 and 130 ppm respectively.It is identified that the bulk colour of crystals is correlated with iodine concentration in the crystals. The higher the iodine concentration,the darker the bulk colour.It is found that different annealing conditions are needed for ZnS:I crystals with different bulk colour in order to obtain the same resistivity.Having taken suitable annealing condition,Al concentration in ZrS:I crystals can be controled at the order of 10-3g/g and the resistivity of ZnS: I slices can be reduced down to 10-102 .cm.The MS(metal-semiconductor) junction made by the low-resistivity ZnS crystals can produce blue EL. The emission peak is located at about 4500A at room temperature. Finally,the influence of iodine on Al diffusion was discussed by means of volume compensation principle.In general,iodine ions enter into ZnS crystals at the substitution site and yet the ion radius of iodine is bigger than sulphur ion. On the other hand,aluminum ion is smaller than zinc ion. So Al ions occupy more easily those vacancies which are the nearest neighbors of the iodine ions during annealing.That is,doping of iodine ion may influence on Al ion diffusion to a certain degree. Therefore under the same annealing conditions, for a higher iodine concentration in ZnS crystals,a large amount of Al can be incorporated in the lattice.It is concluded that the diffusion of Al impurity have not only a connection with annealing condition and Zn-Al alloy composition but also with the iodine concentration in ZnS crystals. Different annealing conditions are needed for ZnS: I crystals with different iodine concentration(i.e. different bulk collour) o obtain same low resistivities.

本文叙述了对碘化学输运法生长的ZnS:I单晶扩散Al杂质,制备低阻ZnS:I晶体的实验方法。在制备低阻ZnS:I单晶过程中,根据晶体内含I的浓度选择热退火条件,可较重复地得到Al浓度在10~(-1)g/g量级,电阻率在10—10~2Ω·cm范围的低阻ZnS单晶。讨论认为,在ZnS:I单晶退火过程中,I的存在有助于Al杂质的扩散。

It has been accepted that in metal-semiconductor contacts exist two kinds of current transport mechanisms (i.e., diffusion and thermionic emission) in series with each other. This knowledge is extended to the hotorojunctions in this paper. Calculations on GaAs-As junction show the different current transport mechanisms for different heterojunctions, some heterojunctions behave as pure diffusion junctions, others must be described in terms of the thermionic emission model. The calculated results predict...

It has been accepted that in metal-semiconductor contacts exist two kinds of current transport mechanisms (i.e., diffusion and thermionic emission) in series with each other. This knowledge is extended to the hotorojunctions in this paper. Calculations on GaAs-As junction show the different current transport mechanisms for different heterojunctions, some heterojunctions behave as pure diffusion junctions, others must be described in terms of the thermionic emission model. The calculated results predict a new phenomenon, in which the forward I-V characteristic of a pure diffusion heterojunction exhibits a negative resistance.A physical explanation is proposed.

本文把在金属-半导体接触中同时存在着扩散和热电子发射这样两种互相串联的电流传输机构这一看法推广到了异质结。以GaAs-Ge为例进行了计算,结果表明,对于不同掺杂的异质结,电流传输机构也不尽相同:有的象一个纯扩散机构的结,而另一些必须用热电子发射模型来描述。计算结果还预示,以扩散限制为主的异质结在正向Ⅰ—Ⅴ特性中将出现负阻,文中对此现象提出了一种物理解释。 文章最后对整个研究作了小结。提出新模型的讨论可能有助于对ΔE。测试结果进行合理的修正,对异质结伏—安特性进行合理的解释;也可能有助于建立各种情况下半导体内的边界条件,以及有助于澄清在np乘积和内建势等方面存在的理论上的争论。

 
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