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dielectric     
相关语句
  介电
    Study on Microwave Dielectric Properties of Ba(Mg_(1/3)Ta_(2/3))O_3 Ceramics Doped with Nanoscaled Powder Additives
    纳米添加剂对Ba(Mg_(1/3)Ta_(2/3))O_3微波陶瓷介电性能的影响研究
短句来源
    Fabrication and Investigation of High K Gate Dielectric Materials for Next Generation MOSFET Applications
    应用于下一代MOSFET中的高介电栅介质材料的研究
短句来源
    DIELECTRIC AND PYROELECTRIC PROPERTIES OF LOW LOSS FERROELECTRIC LiTaO_3 CRYSTALS
    低损耗LiTaO_3单晶的介电和热释电性能
短句来源
    Dielectric Resonance of Ferrits in the MicroWave Band
    铁氧体在微波频段的介电共振
短句来源
    DIELECTRIC AND FERROELECTRIC PROPERTIES OF Cd_(0.03)Sr_(0.485)Ba_(0.485)Nb_2O_6 SINGLE CRYSTALS
    Cd_(0.03)Sr_(0.485)Ba_(0.485)Nb_2O_6单晶的介电和铁电性能
短句来源
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  介质
    Basic Study of Electromagnetic Scattering from Dielectric and Coated Structures--Integral Equation Method and Its Fast Solver
    介质以及涂敷介质结构电磁散射特性的基础研究——积分方程法及其快速求解
短句来源
    Studies of High k Dielectric Materials on Bulk Si and SOI and Their Applications
    体Si和SOI上高k介质材料研究和应用探索
短句来源
    Fabrication and Investigation of High K Gate Dielectric Materials for Next Generation MOSFET Applications
    应用于下一代MOSFET中的高介电栅介质材料的研究
短句来源
    Theoretical Analysis of Laser-Resonator With a Rectangular Hollow Dielectric Waveguide
    矩形空心介质波导激光谱振腔的理论分析
短句来源
    Design of Directional Coupler of Millimeterwave Integrated Dielectric Waveguides
    毫米波集成介质波导定向耦合器的设计
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  电介质
    The Dielectric in AC Plasma Panel
    AC等离子体显示器件中的电介质材料
短句来源
    Progress of Studies on High Dielectric Constant Materials as Gate Dielectrics
    高介电常数栅极电介质材料的研究进展
短句来源
    High k Gate Dielectric and Materials Si Nanotransistor
    高k栅极电介质材料与Si纳米晶体管
短句来源
    High k Gate Dielectric Materials and Si Nanotransistor(Continued)
    高k栅极电介质材料与Si纳米晶体管(续)
短句来源
    The preparation of submicron BaTiO3 superfine powder and the dielectric properties of high dielectric constant & high voltage X7R MLC ceramic were researched in this dissertation, of which the principles and process is researched by XRD, TEM, EDX, SEM, on the basis of crystal chemistry, physics & chemistry, surface and interface chemistry.
    本文基于晶体化学、材料物理化学、电介质物理等基础理论,运用XRD、TEM、EDX、SEM等现代微观分析手段,对亚微米钛酸钡超细粉料制备技术以及高介高性能X7R MLC瓷料和高压高性能X7R的介电性能进行了研究。
短句来源
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    Dispersion properties of high-order TE modes in nonlinear dielectric film waveguides
    非线性质膜波导中高阶TE模的色散特性
短句来源
    Study of Charge Characteristics of New Dielectric Film for VLSI
    用于VLSI的新型质膜电荷特性的测试研究
短句来源
    Experimental Study of Insulating Properties of Ta_2O_5 Dielectric Films and Ta_2O_5-SiO Doubly Stacked Dielectric Films
    Ta_2O_5质膜和Ta_2O_5-SiO双层质膜绝缘特性的实验研究
短句来源
    NITROGEN-RICH SiO_xN_y GATE DIELECTRIC FILM PREPARATION BY LOW TEMPERATURE PECVD METHOD AND ITS CHARACTERISTICS
    PECVD法低温制备富氮的SiO_xN_y栅质膜及其特性
短句来源
    By using the vacuum coating equipment and adopting the vapouring technique which assist anted by electron beam and hydronium. We aggraded the optical dielectric layer on the two end surfaces of the semiconductor laser's luminous CMOS chip,which has 100μm stripe width and 1mm resonator length.
    利用真空镀膜设备,采用电子束离子辅助蒸发技术,在条宽100μm腔长1mm的半导体激光器发光芯片的端面沉积光学质膜。
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      dielectric
    Because of the existence of nanopores, the dielectric constant of PI films decreased by a wide margin and was less than 2.0 at a PU mass fraction of 20%.
          
    It implies that this is an effective means to reduce the dielectric constant of PI, but it also causes the decrease of tensile strength and the rise of water absorption.
          
    Lead zirconium titanate (PZT) films (Zr/Ti=45:55) with a high dielectric constant are prepared successfully on the low-resistance Si substrate in sol-gel dip-coating process with PT film used as the buffer layer.
          
    The dielectric and ferroelectric properties of the films as well as the relationship between crystallization and preparing condition are studied.
          
    The relative dielectric constant εr and the dissipation factor tgδ of the PZT thin films were measured with an LCR meter and were found to be 158 and 0.04-0.005, respectively.
          
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    Experimental investigations of the effects of dielectric loading on an x- band field displacement isolator are presented. The dielectric materials used are the (1) polystyrene (∈=1. 7) and (2) mica (∈=5. 0). The material is placed adjacent to the resistance strip on the ferrite slab. The variations of the forward and reverse attenuations with the (1) ferrite slab position in the rectangular waveguide,(2) applied magnetic field, (3) thickness of the dielectric slab, (4) height of the dielectric...

    Experimental investigations of the effects of dielectric loading on an x- band field displacement isolator are presented. The dielectric materials used are the (1) polystyrene (∈=1. 7) and (2) mica (∈=5. 0). The material is placed adjacent to the resistance strip on the ferrite slab. The variations of the forward and reverse attenuations with the (1) ferrite slab position in the rectangular waveguide,(2) applied magnetic field, (3) thickness of the dielectric slab, (4) height of the dielectric slab, and (5) operating frequency, are studied. Results prove that the performance of the isolator can be improved by the dielectric loading. Both the bandwidth and the figure of merit are inc- reased. The reverse attenuation incseases 14 db while the forword attenuation increases only 0. 1 db.

    本文叙述介质加载对三公分波段场移式隔离器性能的改进的一些初步实验结果。这里所用的介质是:(1)聚苯乙稀(ε_e=1.7),(2)云母片(ε_e=5.0)。我们研究了: 1.加介质后,正向衰减α~+和反向衰减α~-与铁氧体薄片在波导中的位置d的关系, 2.介质厚度t_e和最佳位置d_x的关系, 3.α~+和α~-与磁化场H_0的关系, 4.α~+和α~-与t_0的关系, 5.α~+和α~-与介质高度h_e的关系, 6.α~+和α~-与工作频率f的关系。实验结果表明:将一高电介常数和低损耗的介貭,加在铁氧体薄片附有吸收层的一侧,可以改善隔离器的性能。在我们的最佳工作情况下,α~+只增加了0.1分贝左右,而α~-却提高了4到14分贝。在驻波比ρ<1.1,反向衰减α~->25分贝,正向衰减α~+<0.5分贝的范围内,器件的频带宽度增加了8%。

    Experimental result of microwave Li-Mg ferrites is reported. These ferrites are fabricated by substituting (Mg2+Ti4+)1/2for Fe3+ ions in the Li ferrites and suitably adding some other metallic ions. This Li-Mg ferrite system is characterized by simultaneously high remanence ratios, low coercivity, low microwave loss and high peak power capacity. The saturation magnetization 4π Ms of this system may be adjusted between 200-3000Gs with dielectric loss tgδe = 2-9×10-4 and peak power handling capacity above...

    Experimental result of microwave Li-Mg ferrites is reported. These ferrites are fabricated by substituting (Mg2+Ti4+)1/2for Fe3+ ions in the Li ferrites and suitably adding some other metallic ions. This Li-Mg ferrite system is characterized by simultaneously high remanence ratios, low coercivity, low microwave loss and high peak power capacity. The saturation magnetization 4π Ms of this system may be adjusted between 200-3000Gs with dielectric loss tgδe = 2-9×10-4 and peak power handling capacity above one megawatt.

    以(Mg~(2+)Ti~(4+))_(1/2)部分地取代锂铁氧体中的三价Fe~(3+)离子,并适当地掺进其它金属离子,从而制成的微波Li-Mg铁氧体系列,兼有剩磁比高、矫顽力和微波损耗低以及功率承受能力强等特点,其饱和磁化强度可在200~3000Gs左右调节,介电损耗正切值tgδe=2~9×10~(-4)。利用这类材料制成的微波器件,可承受高达1MW的峰值功率。

    By concise mathematical explanations and experimental results, a new structure of latching ferrite rectangular waveguide phase shifter is first introduced in this paper. Theoretical results have been proved to be basically identical with experiments.It can be applied to several types of latching ferrite rectangular waveguide phase shifters, such as dielectric-loaded, orthogonal twin-ridged and twin-toroidal phase shifters. In particular, it is most suitable for high average power.

    本文介绍了一种新型波导结构的锁式铁氧体移相器,给出了简明的数学解析与实验结果。理论与实践基本一致。这种结构型式对于介质加载型、正交双脊型以及双环型等矩形波导锁式移相器均有效,特别适于高平均功率下的应用。

     
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