助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   x-junction 的翻译结果: 查询用时:0.007秒
图标索引 在分类学科中查询
所有学科
电信技术
更多类别查询

图标索引 历史查询
 

x-junction
相关语句
  x结波导
     Study of GaAs Asymmetric X-Junction Waveguide Hrybrid Coupler
     GaAs非对称X结波导混合耦合器的研究
短句来源
     The improved design of asymmetric X-junction hybrid coupler
     非对称X结波导混合耦合器的改进型设计
短句来源
     In order to diminish the crosstalk and power loss of asymmetric X-junction coupler and increase the angle of asymmetric area for separating mode, an improved design of asymmetric X-junction coupler is proposed.
     为了减小非对称X结波导混合耦合器的串音和功耗,增大实现模式分离的非对称端分支角,提出了一种改进型设计.
短句来源
     The beam propagation method and effective index method are used to simulate and analysis the crosstalk and power loss of improved asymmetric X-junction coupler. The result shows that the crosstalk of improved X-junction has been greatly diminished and the power loss has been ameliorated.
     用光束传播法结合有效折射率法模拟分析了改进后的非对称X结波导混合耦合器的串音与功耗,结果表明其串音比原来有了大幅度的减小,而且功耗也得到了改善.
短句来源
  “x-junction”译为未确定词的双语例句
     Abstract The first GaAs 1 X 2 Mach-Zehnder waveguide switch modulator is reported,and the mechanism of the device is analyzed. In this device, a Y-branch cgupler isused at input side, and a asymmetic X-junction at output one. The characteristicof the estinict ratio of -16dB and a switching voltage of 19V are achieved at an ope rating wavelength of 1.15um.
     文报道了GaAs1×2MZ波导开关/调制器的研究结果,并分析了该器件的工作原理.这种器件利用Y分支作为3dB耦合器,非对称X结作为干涉器.在波长1.15μm下测试,得到了串音比小于-16dB和开关电压19V的开关特性.预计该器件可广泛应用于GaAs1×。
短句来源
查询“x-junction”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法,我们为您准备了出自英文原文的大量英语例句,供您参考。
  x-junction
We review the important features of the right-angle X-junction diffraction model and discuss both its theoretical framework and its validity range.
      
The excess loss across an acute-angle symmetric X-junction composed of two weakly guiding single-mode buried channel waveguides of square core cross-section is shown to be very small provided the junction angle is greater than a few degrees.
      
Varying the exposure duration of the stimuli shows that the more balanced bipole competition in the X-junction case takes longer exposures to resolve than the bipole competition in the T-junction case (Experiment 3).
      


This paper reports the research result of GaAg 2×2 asymmetric Mach-Zehnder waveguide switch/modulator. The mechanism of this device and the factors of crosstalk are analyzed. Instead of traditional Y-branches, two asymmetric X-junctions have used in the switch. An 3dB coupler with good performance is obtained. The device operating at λ = 1.15μm has a 12V Switching voltage and a crosstalk ratio less than - 22.4db. This kind of switch will find application in the switching arrays.

报道了GaAs2×2非对称Mach-Zehnder光波导开关调制器的研制结果,分析了这种开关的工作原理和产生串音的因素.采用两个非对称X型耦合器代替传统的Y分支耦合器,得到了性能良好的X型3dB耦合器.λ=1.15μm时,器件的串音比小于-22.4dB,开关电压约1.2V.

On the ba.se plate of heavy iodine-doped polyacetylene (CH)X,sodium was doped by an ion implantation method and p+-(CH )x/n-(CH )x junction was formed, and its current-Voltage characteristics wore obtained. Using the model of tunneling currents formed by electrons in the soliton band in p+ region and in the botton of the conduction band in n region tunneling thfoligh junction barrier. We deduced the relation of junction current varying with appfied voltages and temperatures.The results obtained show good agreement...

On the ba.se plate of heavy iodine-doped polyacetylene (CH)X,sodium was doped by an ion implantation method and p+-(CH )x/n-(CH )x junction was formed, and its current-Voltage characteristics wore obtained. Using the model of tunneling currents formed by electrons in the soliton band in p+ region and in the botton of the conduction band in n region tunneling thfoligh junction barrier. We deduced the relation of junction current varying with appfied voltages and temperatures.The results obtained show good agreement with those of experiments.

我们在碘重掺杂聚乙炔(CH)_x基片上,用离子注入法掺钠,形成p~+-(CH)_x/n-(CH)_x结,并测得其电流-电压特性曲线。用P~+区孤子能带中的电子与n区导带底附近的电子,通过结的势垒产生隧道贯穿,形成隧道贯穿电流的模型,导出了结电流随偏置电压和温度变化的关系式,所得结果与实验相符。

Abstract The first GaAs 1 X 2 Mach-Zehnder waveguide switch modulator is reported,and the mechanism of the device is analyzed. In this device, a Y-branch cgupler isused at input side, and a asymmetic X-junction at output one. The characteristicof the estinict ratio of -16dB and a switching voltage of 19V are achieved at an ope rating wavelength of 1.15um. It is shown that this device could be applied to 1 Xnswitching array and high-speed modulation.

文报道了GaAs1×2MZ波导开关/调制器的研究结果,并分析了该器件的工作原理.这种器件利用Y分支作为3dB耦合器,非对称X结作为干涉器.在波长1.15μm下测试,得到了串音比小于-16dB和开关电压19V的开关特性.预计该器件可广泛应用于GaAs1×。开关列阵及高速光调制等方面.

 
<< 更多相关文摘    
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关x-junction的内容
在知识搜索中查有关x-junction的内容
在数字搜索中查有关x-junction的内容
在概念知识元中查有关x-junction的内容
在学术趋势中查有关x-junction的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社