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glow-discharge plasma
相关语句
  辉光等离子体
     1. The efficient, economic, controllable glow-discharge plasma generator has been developed. The one atmosphere uniform, controllable, glow-charge surface plasma has been generated successfully.
     一、成功研制了高效、经济、可控的辉光等离子体发生器,利用自行研制的等离子体发生器一个大气压下产生了均匀可控的辉光等离子体,并进行了流动显示实验,采用EHD技术在静止的空气中诱导了流场,开创了主动流动控制一条新思路。
短句来源
  辉光放电等离子体
     The acrylic fibers are treated by oxygen and nitrogen glow-discharge plasma.
     本文采用了低温低压辉光放电等离子体对腈纶进行处理,放电频率为15.5MHz。
短句来源
  “glow-discharge plasma”译为未确定词的双语例句
     SURFACE ALLOYING BY GLOW-DISCHARGE PLASMA WITH ARC SOURCE
     加弧辉光放电等离子表面合金化
短句来源
     Study on Process and Diffusion Kinetics or Titanizing by Technique of Glow-discharge Plasma Surface Alloying with Arc Sources
     加弧辉光离子渗钛及其扩散动力学的研究
短句来源
     Surface Alloying by Glow-discharge Plasma with Arc Source
     加弧辉光离子渗镀技术
短句来源
     Acrylic Fibers Treated by Glow-Discharge Plasma and the Anti-Static Ability
     腈纶的低压等离子体处理及抗静电性能研究
短句来源
     3、 In this paper, the glow-discharge plasma device has been placed in flow for experiment, and analyze the results of experiment.
     三、进行了烟流动显示实验并对实验结果进行分析。
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  相似匹配句对
     Glow-worm Lake
     萤光湖之儿时梦
短句来源
     Glow Pressure Meter
     辉光压力计
短句来源
     Glow lon-nitriding
     辉光离子氮化
短句来源
     ATOMIC OXYGEN AND SHUTTLE GLOW
     原子氧与航天器表面辉光现象
短句来源
     Glow discharge and Paschen law
     气体放电实验与帕邢定律
短句来源
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  glow-discharge plasma
Preliminary results of a study of the hydrogenation of HgCdTe epilayers grown by molecular beam epitaxy on Si substrates using a glow-discharge plasma are presented.
      
The hydrogen permeability of titanium of grades VT1-00 and VT1-0 and of titanium iodide is investigated under saturation from glow-discharge plasma and in the cathodic process of the sulfuric acid electrolyte.
      
Carbon gasification in a hydrogen glow-discharge plasma
      
A mathematical model is used to calculate the concentrations of molecular ions in the glow-discharge plasma in order to select isotopes free from molecular ions.
      
The kinetics of the silicon-ion concentration change in the glow-discharge plasma show that cathode sputtering causes reconstruction of the surface layer.
      
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The effect of preparation parameters on the nature of hydrogen bond in a-Si:H films prepared by r. f. glow-discharge plasma deposition is studied. Also, the release mechanism of hydrogen from a-Si:H films during annealing is discussed. It is found that the nature of hydrogen bond in a-Si: H films can be controlled by varying the preparation parameters, especially the plasma pressure. Concerted hydrogen model is suggested by the authors to explain the mechanism of release of hydrogen from a-Si:H films...

The effect of preparation parameters on the nature of hydrogen bond in a-Si:H films prepared by r. f. glow-discharge plasma deposition is studied. Also, the release mechanism of hydrogen from a-Si:H films during annealing is discussed. It is found that the nature of hydrogen bond in a-Si: H films can be controlled by varying the preparation parameters, especially the plasma pressure. Concerted hydrogen model is suggested by the authors to explain the mechanism of release of hydrogen from a-Si:H films during annealing.

研究了等离子体工艺参数对射频辉光放电沉积的a-Si:H膜中氢的键合状态的影响及氢在退火时的释放机理。结果表明:可以通过不同的制备条件(特別是等离子体压力)控制a-Si:H膜中氢的键合状态。提出了以空间氢聚团模型解释在a-Si:H膜的退火过程中氢的释放机理。

a-SiN_x∶H films prepared by R.F.glow discharge plasma decomposition of SiH_4+NH_3+H_2 gas mixture with different gas ratios were investigated by IR and H evolu-tion spectra.It was found that the structures of the a-SiN_x∶H films were changedfrom like a-Si∶H to like a-SiN_(1.33)∶H forms depending on the magnitude of N/Siratios.As N/Si<0.56,a-Si∶H was the dominant phase;N/Si>0.73,a-SiN_(1.33)∶Hwas the dominant phase.Structure transformation occurred when N/Si was between0.56-0.73.

用红外及氢释放谱研究了由高频辉光放电分解不同配比的 SiH_4+NH_3+H_2混合气体而制备的a-SiN_x∶H 薄膜。结果发现:随着 N/Si 增加,膜的结构由类 a-Si∶H 形式逐渐过渡到类 a-SiN_(1.33)∶H 形式。当 N/Si<0.56,膜的结构以 a-Si∶H 相为主,当 N/Si>0.73时,a-SiN_(1.33)∶H 相起支配作用。在0.56

A radio frequency glow discharge plasma deposition system was used to produce hydrogenated amorphous silicon films from silane(2.5% in H). The r. f. power at a frequency of 11MHz is capacitively coupled. The substrate temperature typically was 250℃. The r. f. glow discharge power was below 20 W.The photoconductivity dispersion relations of the hydrogenated amorphous silicon films show that the spectrum peak of photoconductivity is consistent with the solar spectrum. Observation of the process of natural...

A radio frequency glow discharge plasma deposition system was used to produce hydrogenated amorphous silicon films from silane(2.5% in H). The r. f. power at a frequency of 11MHz is capacitively coupled. The substrate temperature typically was 250℃. The r. f. glow discharge power was below 20 W.The photoconductivity dispersion relations of the hydrogenated amorphous silicon films show that the spectrum peak of photoconductivity is consistent with the solar spectrum. Observation of the process of natural oxidation on the surface of different samples by X-ray photoelectron spectroscopy (XPS) indicates that the surface stability increases progressively in the order: c-Si

本文阐述了氢化非晶态硅(a-Si:H)薄膜材料的辉光放电(GD)法制备技术和等离子体化学反应过程。对所制备的a-Si:H薄膜样品作了光电导测量,光电导的色散关系表明,光电导光谱峰值与太阳光谱的峰值相一致;测量还得到σ_ph/σ_d。比值高达3×10~4,因此,将其作为光电器件应用是大有希望的。文中对晶化和氢的逸出作了讨论,并利用x射线光电子能谱(XPS)方法对a-Si:H薄膜样品表面作了分析,结果表明,a-Si:H薄膜作为器件表面钝化膜应用具有特殊的优越性。

 
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